• Journal of IKEEE
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• v.11 no.4
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• pp.158-164
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• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.403-409
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• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.

• Journal of Power Electronics
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• v.5 no.2
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• pp.109-119
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• 2005

This paper deals with the performance analysis of static compensator (STATCOM) based voltage regulator for self­excited induction generators (SEIGs) supplying balanced/unbalanced and linear/ non-linear loads. In practice, most of the loads are linear. But the presence of non-linear loads in some applications injects harmonics into the generating system. Because an SEIG is a weak isolated system, these harmonics have a great effect on its performance. Additionally, SEIG's offer poor voltage regulation and require an adjustable reactive power source to maintain a constant terminal voltage under a varying load. A three-phase insulated gate bipolar transistor (IGBT) based current controlled voltage source inverter (CC- VSI) known as STATCOM is used for harmonic elimination. It also provides the required reactive power an SEIG needs to maintain a constant terminal voltage under varying loads. A dynamic model of an SEIG-STATCOM system with the ability to simulate varying loads has been developed using a stationary d-q axes reference frame. This enables us to predict the behavior of the system under transient conditions. The simulated results show that by using a STATCOM based voltage regulator the SEIG terminal voltage can be maintained constant and free from harmonics under linear/non linear and balanced/unbalanced loads.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1126-1128
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• 2002

In proportion to the development of various cultural contents industry, although the lighting tools with advanced control system are needed, the fields of the lighting tools are not competitive in techniques because they are limited in small businesses and have been lost their markets to foreign companies in the high value added industry. Accordingly, the technique that is better than current lighting tools is needed urgently. So, for the new lighting tools, this paper presents a new dimming method using IGBT(Insulated Gate Bipolar Transistor) devices. There are three procedures in this study. For the first, the authors verify superiority of IGBT Dimmer with simulation using EMTDC in former step for development of IGBT dimmer. Secondly, the authors made IGBT dimmer directly with the basis of simulation results. For the last, the efficiency, the Total Harmonic Distortion(THD) current, temperature characteristic, noise characteristic, voltage drop, heat losses between the IGBT dimmer and the Thyristor dimmer that is being used popularly in the industries the stages, and the theaters were tested and compared..

• Journal of Power Electronics
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• v.15 no.3
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• pp.610-620
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• 2015

An inherent zero-voltage and zero-current-switching phase-shifted full-bridge converter with reverse-blocking insulated-gate bipolar transistor (IGBT) or non-punch-through IGBT is proposed in this paper. This converter not only ensures that the switches in the lagging leg works at zero-current switching, but also minimizes circulating conduction loss without any additional auxiliary circuits. A 1.2 kW hardware prototype is designed, fabricated, and tested to verify the proposed topology. The control loop design procedures with small-signal models are also presented. A simple, low-cost, and robust democratic current-sharing circuit is also introduced and verified in this study. The proposed converter is a suitable alternative for compact, cost-effective applications with high-voltage input.

• Journal of Power Electronics
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• v.12 no.1
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• pp.120-127
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• 2012

Fault diagnosis technique of electrical drives is becoming more and more important, since voltage fed converter system has become industrial standard in many applications. Many studies have been conducted an inverter fault diagnosis for induction motors. However, there are few researches about fault diagnosis of 3-phase ac/dc PWM (Pulse Width Modulation) converter compared to the dc/ ac inverter. The ac/dc converter is the opposite of dc/ac inverter at current flow. Also, inverter and converter have different current patterns under the same condition of IGBT (Insulated gate bipolar transistor) open switch fault. Therefore, it is difficult to apply intact diagnosis methods of inverter to the converter. This paper proposes modified fault detection methods for IGBT open switch fault in 3-phase ac/dc PWM converter by modifying established fault diagnostic methods for dc/ac inverters.

• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1193-1198
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• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.

• Journal of IKEEE
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• v.15 no.2
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• pp.164-170
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• 2011

In this paper, we present a novel Lateral Insulated-Gate Bipolar Transistor(LIGBT) structure. The proposed structure has extra emitter between emitter and collector of the conventional structure. The added emitter can significantly improve latch-up current densities, forward voltage drop (Vce,sat) and turn-off characteristics. From the simulation results, the proposed LIGBT has the lower forward voltage drop(1.05V), the higher latch-up current densities($2.5{\times}10^3\;A/{\mu}m^2$), and the shorter turn-off time(7.4us) than those of the conventional LIGBT.

• Journal of Electrical Engineering and Technology
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• v.4 no.2
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• pp.211-218
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• 2009

This paper presents a voltage and frequency controller (VFC) for a 4-wire stand-alone wind energy conversion system (WECS) employing an asynchronous generator. The proposed VF con-troller consists of a three leg IGBT (Insulated Gate Bipolar Junction Transistor) based voltage source converter and a battery at its DC bus. The neutral terminal for the consumer loads is created using a T-connected transformer, which consists of only two single phase transformers. The control algorithm of the VF controller is developed for the bidirectional flow capability of the active power and reactive power control by which it controls the WECS voltage and frequency under different dynamic conditions, such as varying consumer loads and varying wind speeds. The WECS is modeled and simulated in MATLAB using Simulink and PSB toolboxes. Extensive results are presented to demonstrate the capability of the VF controller as a harmonic eliminator, a load balancer, a neutral current compensator as well as a voltage and frequency controller.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.