• 제목/요약/키워드: Input coupled

검색결과 503건 처리시간 0.026초

Single Mode Lasing in InGaAsP/InP Semiconductor Coupled Square Ring Cavities

  • Hyun, Kyung-Sook;Lee, Taekyu;Moon, Hee-Jong
    • Journal of the Optical Society of Korea
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    • 제16권2호
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    • pp.157-161
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    • 2012
  • This work reports the stability of the resonant characteristics in multimode interferometer coupled square ring semiconductor cavities. Based on the analysis of single square ring cavities, the single mode operations in the multimode interferometer coupled ring cavities are analyzed and the devices are demonstrated on the semiconductor multiple quantum well epitaxial structure. By varying the lasing conditions such as substrate temperature and input pump power, single resonant mode operations are also observed.

시간영역 유한차분법을 이용한 전자기결합 마이크로스트립 수직다이폴의 해석 (Analysis of Electromagnetically cCoupled Microstrip Transverse Dipole using Finite Difference Time Domain (FDTD) Method)

  • 손영수;윤현보
    • 한국전자파학회지:전자파기술
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    • 제5권4호
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    • pp.30-39
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    • 1994
  • 시간영역 유한차분법을 이용하여, 전자기혈합(electromagnetically coupled) 구조를 갖는 마이크로스트립 수직다이폴의 공진주파수, 반사계수 및 입력임키던스를 계산학, 계산영역내에서 광대력 전자파의 진행 및 전자 계성분의 분포를 도시하였다. 또한 계산된 결과를 보고된 모멘트법(Method of Moment)의 계산 결과 및 실험결과[8]와 비교, 잘 일치하고 있음을 확인하였다.

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A New GPS Receiver Correlator for the Deeply Coupled GPS/INS Integration System

  • Kim, Jeong-Won;Hwang, Dong-Hwan;Lee, Sang-Jeong
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.1
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    • pp.121-125
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    • 2006
  • A new GPS receiver correlator for the deeply-coupled GPS/INS integration system is proposed in order to the computation time problem of the Kalman filter. The proposed correlator consists of two early, prompt and late arm pairs. One pair is for detecting data bit transition boundary and another is for the correlator value calculation between input and replica signal. By detecting the data bit transition boundary, the measurement calculation time can be made longer than data bit period. As a result of this, the computational time problem of the integrated Kalman filter can be resolved. The validity of the proposed method is given through computer simulations.

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Floating Inverter Amplifiers with Enhanced Voltage Gains Employing Cross-Coupled Body Biasing

  • Jae Hoon Shim
    • 센서학회지
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    • 제33권1호
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    • pp.12-17
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    • 2024
  • Floating inverter amplifiers (FIAs) have recently garnered considerable attention owing to their high energy efficiency and inherent resilience to input common-mode voltages and process-voltage-temperature variations. Since the voltage gain of a simple FIA is low, it is typically cascaded or cascoded to achieve a higher voltage gain. However, cascading poses stability concerns in closed-loop applications, while cascoding limits the output swing. This study introduces a gain-enhanced FIA that features cross-coupled body biasing. Through simulations, it is demonstrated that the proposed FIA designed using a 28-nm complementary metal-oxide-semiconductor technology with a 1-V power supply can achieve a high voltage gain (> 90 dB) suitable for dynamic open-loop applications. The proposed FIA can also be used as a closed-loop amplifier by adjusting the amount of positive feedback due to the cross-coupled body biasing. The capability of achieving a high gain with minimum-length devices makes the proposed FIA a promising candidate for low-power, high-speed sensor interface systems.

A급 CMOS 전류 콘베이어 (CCII) (Class A CMOS current conveyors)

  • 차형우
    • 전자공학회논문지C
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    • 제34C권9호
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    • pp.1-9
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    • 1997
  • Novel class A CMOS second-generation current conveyors (CCII) using 0.6.mu.m n-well standard CMOS process for high-frequency current-mode signal processing were developed. The CCII consists of a regulated current-cell for the voltage input and a cascode current mirror for the current output. In this architecture, the two input stages are coupled by current mirrors to reduce the current input impedance. Measurements of the fabricated cCII show that the current input impedance is 308 .ohm. and the 3-dB cutoff frequency when used as a voltage amplifier extends beyond 10MHz. The linear dynamic ranges of voltage and current are from -0.5V to 1.5V and from -100.mu.A to +120.mu.A for supply voltage V$\_$DD/ = -V$\_$SS/=2.5V, respectively. The power dissipation is 2 mW and the active chip area is 0.2 * 0.2 [mm$\^$2/].

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Input Impedances of PWM DC-DC Converters: Unified Analysis and Application Example

  • Pidaparthy, Syam Kumar;Choi, Byungcho
    • Journal of Power Electronics
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    • 제16권6호
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    • pp.2045-2056
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    • 2016
  • The input impedances of pulse width modulated (PWM) dc-to-dc converters, which dictate the outcomes of the dynamic interaction between dc-to-dc converters and their source subsystem, are analyzed in a general and unified manner. The input impedances of three basic PWM dc-to-dc converters are derived with both voltage mode control and current mode control. This paper presents the analytical expressions of the 24 input impedances of three basic PWM dc-to-dc converters with the two different control schemes in a factorized time-constant form. It also provides a comprehensive reference for future dynamic interaction analyses requiring knowledge of the converters' input impedances. The theoretical predictions of the paper are all supported by measurements on prototype dc-to-dc converters. The use of the presented results is demonstrated via a practical application example, which analyzes the small-signal dynamics of an input-filter coupled current-mode controlled buck converter. This elucidates the theoretical background for the previously-reported eccentric behavior of the converter.

마이크로파 집적회로를 이용한 복수 마이크로스트립선 결합회로의 설계 (A Design of Multiple Microstrip Line Coupled Circuit for Microwave Integrated Circuit)

  • 박일;강희창;진연강
    • 한국통신학회논문지
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    • 제16권9호
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    • pp.862-876
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    • 1991
  • 본 논문에서는 N-선로 결합 구조의 등가 이미턴스 산출식을 N-선로 결합시스템의 normal mode 정수로 표현하였다 제안한 산출식은 다양한 결합 구조 즉 방향성 결합기, DC 블럭, 대역통과/대역소거 여파기 및 기타 균일하게 결합된 형태인 여파기 등에 이용될 수 있도록 일반화 되었으며 이들 계산식은 준-TEM 모드로 가정한 결과이다. 이를 이용하여 임의의 임피던스로 종단한 일반적인 4-포트 결합 선로에서 정의된 산란정수를 구하여 입, 출력 포트에 접속된 임피던스에 정합시키는 최척 선로 규격을 구하는 과정을 제시하였다. 제시된 방법을 적용하여 복수 마이크로스트립 결합 선로인 3-선 2-포트 대역소거 여파기의 주파수 특성을 기존의 방법과 비교하여 일치함을 확인하고 5-선 4-포트 구조를 테프론(비유전율 $e$r=2.55) 기판(두께 h=1.588mm) 에 중심 주파수 4 GHz로 설계하였다. 설계 수치에 따른 회로를 제작하여 측정한 실험 결과는 설계시 얻어진 주파수 특성 이론치에 근접하였다.

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시스템 온 칩 내 eDRAM을 사용한 Tightly Coupled Memory의 병렬 테스트 구조 (A Parallel Test Structure for eDRAM-based Tightly Coupled Memory in SoCs)

  • 국인성;이재민
    • 한국정보전자통신기술학회논문지
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    • 제4권3호
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    • pp.209-216
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    • 2011
  • 최근 시스템 온 칩 내 메모리의 고속 동작을 위해 TCM (Tightly Coupled Memory)를 내장한 설계가 크게 증가하고 있다. 본 논문에서는 시스템 온칩 내 eDRAM을 사용한 TCM 메모리를 위한 새로운 병열 메모리 테스트 구조를 제안한다. 제안하는 기법에서 피테스트 메모리가 테스트 모드에서 병렬 구조로 바뀌고 바운더리 스캔 체인과 함께 내장 메모리의 테스트용이도가 크게 향상된다. 병렬테스트 방식의 메모리는 각 메모리 요소들이 특정한 기능을 수행하도록 구조화되어 있으므로 모듈들로 분할하여 테스트 할 수 있으며 입출력 데이터를 기반으로 동적 테스트 평가 가능하다. 시뮬레이션을 통하여 제안한 기법의 타당성을 검증하였다.

내부 열용량을 고려한 수직 지중열교환기의 3차원 수치 모델 개발 (Development of a Three-Dimensional Numerical Model of the Vertical Ground-Coupled Heat Exchanger Considering the Effects of the Thermal Capacity)

  • 김의종
    • 설비공학논문집
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    • 제28권7호
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    • pp.293-298
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    • 2016
  • A three-dimensional (3D) numerical model of the vertical ground-coupled heat exchanger is useful for analyzing the modern ground source heat pump system. Furthermore, a detailed description of the inner side of the exchanger allows to account for the effects of the thermal capacity. Thus, both methods are included in the proposed numerical model. For the ground portion, a FDM (Finite Difference Method) scheme has been applied using the Cartesian coordinate system. Cylindrical grids are applied for the borehole portion, and the U-tube configuration is adjusted at the grid, keeping the area and distance unchanged. Two sub-models are numerically coupled at each time-step using an iterative method for convergence. The model is validated by a reference 3D model under a continuous heat injection case. The results from a periodic heat injection input show that the proposed thermal capacity model reacts more slowly to the changes, resulting in lower borehole wall temperatures, when compared with a thermal resistance model. This implies that thermal capacity effects may be important factors for system controls.

유도결합형 플라즈마에서 압력에 따른 Ar Gas의 전기적 특성분석 (Analysis of Electrical Properties of Ar Gas According to Input Pressure for Inductively Coupled Plasma)

  • 조주웅;이영환;허인성;김광수;최용성;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1176-1179
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    • 2003
  • Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

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