• 센서학회지
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• 제27권5호
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• pp.275-279
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• 2018

In this study, we introduce a sensing platform based on a plasmonic metasurface absorber (MA) with a vertical nanogap for the ultrasensitive detection of monolayer molecules. The vertical nanogap of the MA, where the extremely high near-field is uniformly distributed and exposed to the external environment, is formed by an under-cut structure between a metallic cross nanoantenna and the mirror layer. The accessible sensing area and the enhanced near-field of the MA further enhance the sensitivity of surface-enhanced infrared absorption for the target molecule of 1-octadecanethiol. To provide strong coupling between the molecular vibrations and plasmonic resonance, the design parameters of the MA with a vertical nanogap are numerically designed.

• 한국군사과학기술학회지
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• 제27권3호
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• pp.311-318
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• 2024

In this paper, a design for a radio frequency(RF) and infrared(IR) absorber with metasurfaces is discussed in microwave frequency bands. The RF absorber includes double layers of metasurfaces to operate in S- and X-bands. Effects of sheet resistance of the metasurfaces and thicknesses of dielectric supporting layers on reflection responses are investigated. An IR stealth layer incorporates an array of conductive grids with slits to reflect IR signals but to transmit RF signals and visible rays. Periodicity of the grids and slits is studied for transmission responses in the X-band and a surface area ratio. Reflection responses of the RF/IR multispectral absorber are found to be lower than -10 dB and -16 dB in the S- and X-bands, respectively, from full-wave simulation. Finally, the RF/IR multispectral absorber is fabricated and its reflection responses are measured to verify designed performance.

• 천문학회보
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• 제40권1호
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• pp.75.3-75.3
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• 2015

Large area infrared surveys are often accompanied with follow-up optical spectroscopic surveys that has a significant legacy value even for other areas of research. Using these spectral database, we have performed a search for MgII absorption lines in the optical spectrum of background quasar. Over the ~4deg2 of AKARI North Ecliptic Pole survey field and Spitzer First Look Survey field, 18 and 16 MgII absorber systems are identified respectively. The redshift range for the background quasars was 1.0<$z_{qso}$<3.4, while the redshift range for the absorber was 0.6<$z_{abs}$<1.6. Galaxies responsible for MgII absorptions are identified in the deep optical images (CFHT r-band), yet the identification still remains ambiguous for 60% of the systems due to the limited image depth and the source crowdedness. The impact parameter ranges 20-60kpc, and the rest-frame equivalent width of MgII absorption ranges $0.7-4{\AA}$. The most critical part in the identification of MgII absorber galaxies is the existence of deep optical images in addition to the high S/N quasar spectrum with R>3000.

• 대한전자공학회논문지SD
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• 제37권2호
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• pp.13-21
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• 2000

장파장 적외선 흡수체로 응용하기 위한 Au-black을 질소가스 분위기의 저진공에서 Au를 증발원으로 하여 제조하였고, 증착조건에 따른 Au-black의 미세구조 분석, 적외선 흡수도 측정 및 패턴형성 실험을 통해 Au-black의 특성을 조사하였다. 단위면적당 질량이 약 600 $\mu\textrm{g}$/㎝/sup 2/이고, 챔버압력이 약 1 Torr이상인 증착조건으로 제조된 Au-black에서 적외선이 포획되는 높은 밀도의 미세공동이 존재하였고, 이 Au-black의 적외선 흡수도는 3∼14 $\mu\textrm{g}$의 파장범위에서 대체로 90%정도였다. 약 900 $\mu\textrm{g}$/cm/sup 2/이하의 단위면적당 질량을 갖는 Au-black의 경우 감광액 lift-off 공정에 의한 패턴형성이 가능하였다. 적외선 흡수도, 열용량 및 패턴형성을 고려할 매 적외선 흡수체로서의 Au-black을 제조하기 위해서는 챔버압력이 약 1 Torr이고, 단위면적당 질량이 약 600 $\mu\textrm{g}$/cm/sup 2/인 증착조건이 가장 적합하였다.

• 대한기계학회논문집A
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• 제34권5호
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• pp.605-609
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• 2010

적외선 센서를 사용하는 최신 관측용 장비들을 저온으로 유지하기 위해서는 극저온 컴프레서를 센서에 연결한다. 그러나 컴프레서 진동원으로부터 발생한 외란 힘에 의해 취득 영상 품질이 저하된다. 따라서 고품질의 영상을 얻기 위해 극저온 쿨러에 대한 진동 절연 설계가 필요하다. 본 논문은 수동 진동 절연 방법의 장점을 사용하면서 컴프레서 외란 진동에 대한 높은 절연 성능이 있는 시스템을 연구 및 설계하는 것이다. 수동 진동 흡수기는 컴프레서의 구동 주파수를 고려하여 설계했다. 또한, 특정 외란 진동과 고주파수의 진동도 절연되는 쿨러 절연 브래킷을 설계하였고, 성능 분석을 위한 실험을 수행하였다.

• 센서학회지
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• 제27권5호
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• pp.306-310
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• 2018

In order to develop a highly sensitive infrared sensor, it is necessary to develop techniques for decreasing the rate of heat absorption and the transition of the absorption wavelength to a longer wavelength, both of which can be induced by decreasing the pixel size of the bolometer. Therefore, in this study, $1{\mu}m$ hole-arrays with a subwavelength smaller than the incident infrared wavelength were formed on the amorphous silicon-based microbolometer pixels in the absorber, which consisted of a TiN absorption layer, an a-Si resistance layer and a SiNx membrane support layer. We demonstrated that it is possible to reduce the thermal time constant by 16% relative to the hole-patternless bolometer, and that it is possible to shift the absorption peak to a shorter wavelength as well as increase absorption in the $4-8{\mu}m$ band to compensate for the infrared long-wavelength transition. These results demonstrate the potential for a new approach to improve the performance of high-resolution microbolometers.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.37-40
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• 2003

반도체 장비의 기능성과 신뢰성을 높이기 위하여 부품의 제조기술은 점차 마이크로 머신 기술을 요구하고 있다. 마이크로머신 기술 중 hot junction이 위치하는 멤브레인 구조는 각종 센서와 히터의 미세부품에서 가장 이용도가 큰 구조이다. 실험에서는 마이크로머신의 기본 구조인 멤브레인 형태를 만들기 위해 KOH 용액과 TMAH 용액으로 단결정 실리콘을 이방성 습식식각 하였다. 실험결과, 식각액의 온도와 농도, 마스크 패턴과 웨이퍼의 결정성의 일치 등을 고려해야 하며, 식각 속도는 KOH 농도 및 온도에 따라 크게 변함을 알 수 있었다. KOH 용액은 30 wt% 80~$90^{\circ}C$ 온도 범위에서 가장 좋은 특성을 나타냈다. 한편, TMAH용액이 실리콘을 식각하는 용액으로 관심을 끄는 것은 단결정에서 상대적으로 $SiO_2$ 박막을 마스크로 사용할 수 있을 뿐 아니라 $SiO_2$ 박막을 마스크로 사용할 수 있을 뿐 아니라 다른 식각액보다 찌꺼기가 적다는 장점 때문이다. 그러나, 다른 용액에 비해 가격이 고가이며 식각 속도가 낮다는 것이 실용적인 측면에서 큰 단점이다. 실험결과를 종합적으로 고려할 때 KOH 용액 농도 30wt%와 온도 $90^{\circ}C$가 마이크로머신 기술에 의한 멤브레인 구조 제작에서 적합한 공정조건이라고 할 수 있다.

• Current Optics and Photonics
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• 제7권6호
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• pp.738-744
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• 2023

Graphene-based saturable absorbers (SAs) are widely used as laser mode-lockers at various laser oscillators. In particular, transmission-type graphene-SAs with ultrabroad spectral coverage are typically manufactured on transparent substrates with low nonlinearity to minimize the effects on the oscillators. Here, we developed two types of transmitting graphene SAs based on CaF₂ and ZnSe. Using the graphene-SA based on CaF₂, a passively mode-locked mid-infrared Cr:ZnS laser delivers relatively long 540 fs pulses with a maximum output power of up to 760 mW. In the negative net cavity dispersion regime, the pulse width was not reduced further by inhomogeneous group delay dispersion (GDD) compensation. In the same laser cavity, we replaced only the graphene-SA based on CaF₂ with the SA based on ZnSe. Due to the additional self-phase modulation effect induced by the ZnSe substrate with high nonlinearity, the stably mode-locked Cr:ZnS laser produced Fourier transform-limited ~130 fs near 2,340 nm. In the stable single-pulse operation regime, average output powers up to 635 mW at 234 MHz repetition rates were achieved. To our knowledge, this is the first attempt to achieve shorter pulse widths from a polycrystalline Cr:ZnS laser by utilizing the graphene deposited on the substrate with high nonlinearity.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1470-1471
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• 2008

We present a front-side micromachined thermopile with high sensitivity in the 3-5${\mu}m$ window, and discuss its application to a novel non-dispersive infrared (NDIR) $CO_2$ gas sensor with a light source emitting collimated light. The micromachined thermopile shows a measured sensitivity of 30 mV/W and a $D^*$ of $0.3{\times}10^8cm^{\surd}Hz/W$. Using this newly fabricated thermopile, we also have successfully developed a small, sensitive NDIR $CO_2$ detector module for accurate air quality monitoring systems in energy-saving building and automotive applications. The novel sample cavity comprising specular reflectors around the light bulb is configured to uniformly emit collimated light into the entrance aperture of the cavity in order to enhance the sensitivity of NDIR $CO_2$ detector.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.334-334
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• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.