• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.10
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• pp.167-175
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• 2018

To cope with the increasing number of natural disasters in recent years, managers in the National Disaster and Safety Status Control Center, who have considerable experience and skills, are regarded highly important. Although the National Disaster and Safety Status Control Center oversees the disaster-status control tasks in preparation for various natural and social disasters, there is little data due to the frequent replacement of managers. Therefore, this study developed a disaster-safety code system that tracks and manages disaster information, because the current record management and amount of information sharing remains very low. Among 22 natural and social disaster types, this study targeted four types of disasters: heavy snow, strong winds, high seas, and heavy rain. The final disaster-safety data code system was proposed through the following processes: analysis of the code systems of disaster areas in Korea and overseas, setup of the implementation of directions, development of the classification system, and categorization. For the systematic accumulation of data, the four code systems were integrated into one. A prototype system was developed and operated to verify the validity of the proposed code system. The results showed that data were accumulated and services were provided accordingly with respect to the proposed code system. If past data are accumulated and utilized according to the proposed code system in this study, it will be helpful in the decision making process to respond to new types of disasters, based on past experiences.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.3
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• pp.190-198
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• 2020

For domestic urban railways, which have a 19.7% aging rate, a performance evaluation is necessary to establish capital improvement investment plans. The performance evaluation, which was recently enacted in the relevant law, points out the excessive time and effort for acquiring data and evaluation. This study developed a performance evaluation simulation prototype using a virtual reality (VR) method to use as training contents for railway performance evaluations. The practical use of the VR technique to reduce the working time under poor environment conditions was confirmed through a literature review. A survey and consultation were conducted for urban railway experts to determine the weight of the performance evaluation items and the facility breakdown structure. This information was utilized to develop performance evaluation sheets for simulation. Based on the evaluation sheet, a training content prototype that evaluates the performance of platform safety doors was developed using VR techniques with HTC VIVE equipment. VR simulation tests were conducted for six players, and the prototype was sufficiently advantageous for a visual confirmation of the facility information. The result is expected to be useful for engineers to understand the performance evaluation process efficiently before an actual performance evaluation of urban railway facilities.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.1D
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• pp.115-123
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• 2006

Recently, construction claims have been increased for protecting the rights of construction participants and effectively adjusting the changes under the contract. Thus, the importance of claim management has been emphasized in the construction industry. In domestic construction industry, some claim issues involved in construction activities are often being developed into disputes and even litigations because of the absence of methods or systems for the dispute resolution, and the lack of judicial precedents which can be provided as the references for resolving a particular dispute. In general, the judicial precedents related to the disputes and litigations occurred among construction participants would be extremely valuable in evaluating and analyzing current claims issues. However, such useful information has not been effectively accumulated and utilized in resolving the similar or sometimes identical types of disputes, thus requiring a large amount of additional costs, time and efforts. The primary objective of this study is to propose a web-based decision support system for construction claim management, which enables contractual participants to easily access and use the information of the judicial precedents related to the current construction claims. The decision support system is composed of 'prevention' and 'settlement' modules for avoiding and systematically resolving the construction claims.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.13-19
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• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Korean Journal of Construction Engineering and Management
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• v.18 no.4
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• pp.36-47
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• 2017

As a typical domestic subsea tunnel construction the Gadeok subsea tunnel applying the method of immersed tunnel has been completed and the Boryeong-Taean subsea tunnel is under construction using NATM. The high-speed railway subsea tunnels between the Honam and Jeju are under consideration, and the feasibility of constructing subsea tunnels with Japan and China is also under consideration. However, it is difficult to provide the process plan information for the construction work such as the analysis of the feasibility of the subsea tunnel and the prediction of the proper construction period because there is no case of domestic construction for it applying the shield TBM method. Due to economic and other reasons, government organizations are reluctant to apply the shield TBM, and there is lack of data on the construction process management field using the shield TBM method. Therefore, a standard construction process management system for the subsea tunnel is needed to analyze the feasibility of the subsea tunnel and to predict the proper construction period. By presenting the standard construction process management system of subsea tunnels such as WBS, Network Diagram, and construction period calculation model, I hope to contribute technically and economically to future subsea tunnel projects.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.75-87
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• 2010

For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.143-151
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• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.