• Title/Summary/Keyword: Information Gap

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A Study on the Automated Compatibility Standard Test System for eBook DRM (전자책 DRM을 위한 자동화된 표준정합성 검사 시스템에 관한 연구)

  • Kim, Tae-Hyun;Kang, Ho-Gap;Ahn, Chang-Ju;Cho, Seong-Hwan
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.13 no.2
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    • pp.127-136
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    • 2013
  • The study of the compatibility of EPUB DRM, granted by the Korea Copyright Commission, as a CT R & D project (Project Title: The Development of the standard reference software technology for International Standard EPUB-based eBook DRM) developed standards such as profile standards for encryption digital signature and authentication certificates and standards for technical terms of rights information. In 2012, these four standards have been established as the Korean Industrial Standards under the names of 'Encryption specification for EPUB DRM,' 'the Digital signature specification for EPUB DRM,' 'the Certificate specification for EPUB DRM,' and 'Definitions of Right Terms for EPUB DRM' through the ODPF(Open Digital Standardization Forum) and the TTA(Telecommunications Technology Association). The research project also proposed standards of ebook DRM license protocols in order for the four standards to practically apply to ebook DRM compatibility. It is necessary for technology standards to require a compatibility standard test process for testing whether implementations which were developed on the basis of the standard specification, comply with standards. This study suggests an automated compatible standard test method and a test model under the ebook DRM standard technical specification.

Improvement of Electrical/optical Characteristics Using Mg-doped GaN Spacers and Quantum Barriers for Nonpolar GaN light-emitting Diodes (마그네슘이 도핑된 GaN 공간층과 양자장벽층을 이용한 무분극 GaN 발광다이오드의 전기적/광학적 특성 향상)

  • Kim, Dong-Ho;Son, Sung-Hun;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.7
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    • pp.10-16
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    • 2011
  • We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.

Contents Development Related to Costume Culture in Traditional Intangible Cultural Properties -The Modernization of Costume Design in Dongraeyaryu- (전통무형문화재의 복식문화컨텐츠 개발 -동래야류 의상 디자인의 현대화 작업)

  • Kim, Soon-Ku
    • Archives of design research
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    • v.17 no.4
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    • pp.251-258
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    • 2004
  • Today we seem to be flooded with digital culture as the age of information has reached its peak. As fusion culture has been generalized, in which the arts and culture of the East and the West are in harmony, and quality of life has been improved, people are enjoying more abundant cultural benefits than ever. In such a situation, we may lose the origin of our culture and disregard our traditional culture due to the mixture of cultures. In addition, it is necessary at this point to distinguish pure culture from mixed one and to re-illuminate the value of our original culture for the next generation. Therefore, the author took interested in Dongraeyaryu, a large-scale festival in Busan, which has been designated as an important intangible cultural property, and carried out a research for its continuous instruction and activation. among contents such as music, costume, dancing and stage properties that compose intangible cultural property, this study selected costume, which has significant visual effects and large differences in shape between old one and contemporary one, for development. By proposing modernized design of costume preferred by the new generation and in harmony with the masks, this study wished to narrow the generation gap, to direct young people's attention to the learning of tradition and to propose motives that activate the culture of local festival.

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A Variable Speed Limits Operation Model to Minimize Confliction at a Bottleneck Section by Cumulative Demand-Capacity Analysis (대기행렬이론을 이용한 병목지점 충돌위험 저감 가변속도제어 운영모형)

  • LEE, Junhyung;SON, Bongsoo
    • Journal of Korean Society of Transportation
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    • v.33 no.5
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    • pp.478-487
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    • 2015
  • This study proposed a Variable Speed Limits(VSL) algorithm to use traffic information based on Cumulative Demand-Capacity Analysis and evaluated its performance. According to the analysis result, the total of delay consisted of 3 separate parts. There was no change in total travel time although the total of delay decreased. These effects was analysed theoretically and then, evaluated through VISSIM, a microscopic simulator. VISSIM simulation results show almost same as those of theoretical analysis. Furthermore in SSAM analysis with VISSIM simulation log, the number of high risk collisions decreased 36.0 %. However, the total delay decrease effect is not real meaning of decrease effect because the drivers' desired speed is same whether the VSL model is operated or not. Nevertheless this VSL model maintains free flow speed for longer and increases the cycle of traffic speed fluctuation. In other words, this is decrease of delay occurrence and scale. The decrease of speed gap between upstream and downstream stabilizes the traffic flow and leads decrease number of high risk collision. In conclusion, we can expect increase of safety through total delay minimization according to this VSL model.

Electrical Characteristics of Copper Circuit using Inkjet Printing (잉크젯 프린팅 방식으로 형성된 구리 배선의 전기적 특성 평가)

  • Kim, Kwang-Seok;Koo, Ja-Myeong;Joung, Jae-Woo;Kim, Byung-Sung;Jung, Seung-Boo
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.43-49
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    • 2010
  • Direct printing technology is an attractive metallization method, which has become immerging as "Green technology" to the conventional photolithography, on account of low cost, simple process and environment-friendliness. In order to commercialize the printed electronics in industry, it is essential to evaluate the electrical properties of conductive circuits using direct printing technology. In this contribution, we focused on the electrical characteristics of inkjet-printed circuits. A Cu nanoink was inkjet-printed onto a Bisaleimide triazine(BT) substrate with parallel transmission line(PTL) and coplanar waveguide(CPW) type, then was sintered at $250^{\circ}C$ for 30 min. We calculated the resistivity of printed circuits through direct current resistance by the measurement of I-V curve: the resistivity was approximately 0.558 ${\mu}{\Omega}{\cdot}cm$ which is about 3.3 times that of bulk Cu. Cascade's probe system in the frequency range from 0 to 30 GHz were employed to measure the Scattering parameter(S-parameter) with or without a gap between the substrate and the probe station chuck. The result of measured S-parameter showed that all printed circuits had over 5 dB of return loss in the entire frequency range. In the curve of insertion loss, $S_{21}$, showed that the PTL type circuits had better transmission of radio frequency (RF) than CPW type.

Effects of The Substrate Temperature and The Thin film Thickness on The Properties of The Ga-doped ZnO Thin Film (기판온도 및 박막두께가 Ga-doped ZnO 박막의 특성에 미치는 영향)

  • Cho, Won-Jun;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.1
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    • pp.6-13
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    • 2010
  • In this study, Ga-doped ZnO (GZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperatures $100{\sim}400^{\circ}C$ and thin film thickness by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the GZO thin films. It is observed that all the thin films exhibit c-axis orientation and a (002) diffraction peak only. The GZO thin films, which were deposited at $T=300^{\circ}C$ and 400 nm, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.4^{\circ}$. AFM analysis shows that the formation of relatively smooth thin films are obtained. The lowest resistivity ($8.01{\times}10^{-4}\;{\Omega}cm$) and the highest carrier concentration ($3.59{\times}10^{20}\;cm^{-3}$) are obtained in the GZO thin films deposited at $T=300^{\circ}C$ and 400 nm. The optical transmittance in the visible region is approximately 80 %, regardless of process conditions. The optical band-gap shows the slight blue-shift with increase in doping which can be explained by the Burstein-Moss effect.

Optical Properties of ZnO Thin Films deposited by Pulsed Laser Deposition (PLD 법을 이용해 제작한 ZnO 박막의 광학적 특성)

  • Kang, Seong-Jun;Joung, Yang-Hee;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.5
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    • pp.15-20
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    • 2007
  • We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.

Optical and Electrical Properties of Al-doped ZnO Thin Films Fabricated by Sol-gel Method with Various Al Doping Concentrations and Annealing Temperatures (Sol-gel 법으로 제작한 Al-doped ZnO 박막의 도핑 농도 및 열처리 온도에 따른 광학적 및 전기적 특성)

  • Shin, Hyun-Ho;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.5
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    • pp.1-7
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    • 2007
  • AZO thin films have been fabricated on quartz substrate with various Al doping concentrations and annealing temperatures by sol-gel method. The bset condition of (002) orientation and smooth surface (rms = 1.082 nm) is obtained for the AZO thin film doped with 1 mol % Al and annealed at 550 $^{\circ}C$. The optical transmittance of AZO thin films is higher than 80 % in the visible region. We observe that the energy band gap extends with increasing the Al doping concentration. This phenomenon is due to the Burstein-Moss effect. Through the measurement of Hall effect, it is observed that the AZO thin film has larger carrier concentration and smaller electrical resistivity than the pure ZnO thin film. However, the AZO thin film shows the decrease of carrier concentration and the increase of resistivity with the increase of Al concentration, that is due to the segregation of Al at grain boundaries. The maximum carrier concentration of $1.80{\times}10^{19}\;cm^{-3}$ and the minimum resistivity of 0.84 ${\Omega}cm$ are obtained for the AZO thin film doped with 1 mol % Al and annealed at 550 $^{\circ}C$.

Design of a Fully Integrated Low Power CMOS RF Tuner Chip for Band-III T-DMB/DAB Mobile TV Applications (Band-III T-DMB/DAB 모바일 TV용 저전력 CMOS RF 튜너 칩 설계)

  • Kim, Seong-Do;Oh, Seung-Hyeub
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.4
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    • pp.443-451
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    • 2010
  • This paper describes a fully integrated CMOS low-IF mobile-TV RF tuner for Band-III T-DMB/DAB applications. All functional blocks such as low noise amplifier, mixers, variable gain amplifiers, channel filter, phase locked loop, voltage controlled oscillator and PLL loop filter are integrated. The gain of LNA can be controlled from -10 dB to +15 dB with 4-step resolutions. This provides a high signal-to-noise ratio and high linearity performance at a certain power level of RF input because LNA has a small gain variance. For further improving the linearity and noise performance we have proposed the RF VGA exploiting Schmoock's technique and the mixer with current bleeding, which injects directly the charges to the transconductance stage. The chip is fabricated in a 0.18 um mixed signal CMOS process. The measured gain range of the receiver is -25~+88 dB, the overall noise figure(NF) is 4.02~5.13 dB over the whole T-DMB band of 174~240 MHz, and the measured IIP3 is +2.3 dBm at low gain mode. The tuner rejects the image signal over maximum 63.4 dB. The power consumption is 54 mW at 1.8 V supply voltage. The chip area is $3.0{\times}2.5mm^2$.

Oriented Constructivism Class Operating System for Considering Interactions between Education Player (교육주체간 상호작용을 고려한 구성주의 기반 학급운영시스템)

  • Moon, Chang-Bae;Goh, Yo-Seop;Son, Chung-Ki;Ma, Ji-Sun;Cho, Jung-Won;Park, Jung-Hwan
    • The Journal of the Korea Contents Association
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    • v.10 no.3
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    • pp.454-462
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    • 2010
  • The current curriculum in the 7th informatics, which simply highlights the use of applied programs rather than enhancing creativity through learning several principles in information science and thus making it hard to have optimism on the future as a powerhouse in IT. By diagnosing these problems, Education Ministry revised the existing curriculum to have a more scientific access to the informatics. However, the curricular revision fails to meet the needs of learners sufficiently because it tends to put the considerations of theoretical specialists before the learners them selves. This paper compares and analyzes the overall understanding of learners on informatics, current-curriculum and 7th revised curriculum and that of college-level, thus offering the student-centered one. Also, the research tries to bridge the opinion gap between developer and learner by looking into the understanding level of university majors about the current curriculum. In doing so, thesis may provide the basis on exploring new approaches and contribute to establishing 7th revised curriculum in school.