• 제목/요약/키워드: Inductively coupled

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고주파 유도결합 플라즈마의 전자에너지 분포함수 계측에 관한 연구 (A Measurements on the Characteristics of Electron Energy Distribution Function of Radio-Frequency Inductively Couples Plasma)

  • 하장호;전용우;최상태;박원주;이광식
    • 조명전기설비학회논문지
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    • 제13권4호
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    • pp.82-86
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    • 1999
  • 본 연구에서는 푸로브법과 교류중첩법을 이용하여 고주파 유도결합 플라즈마에서 전자에너지 분포함수를 측정하였다. 실험조건은 압력 10∼40[mTorr], 입력파워는 100∼600[W]이고, 가스유량은 3∼12[sccm]이며, 전자에너지 분포함수의 공간분포 측정에 있어서 아스펙트비(R/L)는 2로 하였다. 전자에너지 분포함수는 압력 및 입력파워에 대하여 강한 의존성을 나타내었고, 가스유량이 증가할수록 증가 하였다. 전자에너지 분포함수의 반경방향 분포는 플라즈마 중심에서 최대가 되었다. 전자에너지 분포함수의 축방향 분포는 석영창과 기판 사이의 중심에서 최대가 되었다. 이러한 결과는 고주파 유도결합 플라즈마의 생성 메커니즘 이해와 간단한 ICP(Inductively Coupled Plasma) 모델링 응용에 기여할 수 있을 것이다.

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유도결합형 플라즈마에서 압력에 따른 Ar Gas의 전기적 특성분석 (Analysis of Electrical Properties of Ar Gas According to Input Pressure for Inductively Coupled Plasma)

  • 조주웅;이영환;허인성;김광수;최용성;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1176-1179
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    • 2003
  • Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

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직류 및 유도결합 플라즈마 마그네트론 스퍼터링법으로 제조된 HfN 코팅막의 미세구조 및 기계적 물성연구 (Microstrcture and Mechanical Properties of HfN Films Deposited by dc and Inductively Coupled Plasma Assisted Magnetron Sputtering)

  • 장훈;전성용
    • 한국표면공학회지
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    • 제53권2호
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    • pp.67-71
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    • 2020
  • For deposition technology using plasma, it plays an important role in improving film deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductive coupled plasma (ICP) antennas and use properties to improve the properties of Hafnium nitride (HfN) films using ICP assisted magnetron sputtering (ICPMS). HfN film deposited using ICPMS showed a finer grain sizes, denser microstructure and better mechanical properties as ICP power increases. The best mechanical properties such as nanoindentation hardness of 47 GPa and Young's modulus of 401 GPa was obtained from HfN film deposited using ICPMS at ICP power of 200 W.

An Investigation on the Extraction and Quantitation of a Hexavalent Chromium in Acrylonitrile Butadiene Styrene Copolymer (ABS) and Printed Circuit Board (PCB) by Ion Chromatography Coupled with Inductively Coupled Plasma Atomic Emission Spectrometry

  • Nam, Sang-Ho;Kim, Yu-Na
    • Bulletin of the Korean Chemical Society
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    • 제33권6호
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    • pp.1967-1971
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    • 2012
  • A hexavalent chromium (Cr (VI)) is one of the hazardous substances regulated by the RoHS. The determination of Cr (VI) in various polymers and printed circuit board (PCB) has been very important. In this study, the three different analytical methods were investigated for the determination of a hexavalent chromium in Acrylonitrile Butadiene Styrene copolymer (ABS) and PCB. The results by three analytical methods were obtained and compared. An analytical method by UV-Visible spectrometer has been generally used for the determination of Cr (VI) in a sample, but a hexavalent chromium should complex with diphenylcarbazide for the detection in the method. The complexation did make an adverse effect on the quantitative analysis of Cr (VI) in ABS. The analytical method using diphenylcarbazide was also not applicable to printed circuit board (PCB) because PCB contained lots of irons. The irons interfered with the analysis of hexavalent chromium because those also could complex with diphenylcarbazide. In this study, hexavalent chromiums in PCB have been separated by ion chromatography (IC), then directly and selectively detected by inductively coupled plasma atomic emission spectrometry (ICP-AES). The quantity of Cr (VI) in PCB was 0.1 mg/kg.

축방향 자기장의 주기적 단속을 이용한 유도결합형 플라즈마 식각장비의 고품위 플라즈마 형성 (The generation of Uniform High Density Plasma of Inductively Coupled Plasma Etcher Enhanced by Alternating Axial Magnetic Field)

  • 정재성;김철식
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.589-592
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    • 1998
  • The performance of inductively coupled plasma (ICP) is enhanced by axial magnetic field driven by alternating current Helmholtz coils in this work. Langmuir pobe is used to characterize the plasma, and the etching performance is demonstrated with phororesist stripping process. It is shown that its density and uniformity depends on the frequency of driving current to the magnetic field.

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Two-dimensional continuum modelling of an inductively coupled plasma reactor

  • Kim, Dong-Ho;Shung, Won-Young;Kim, Do-Hyun
    • 한국결정성장학회지
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    • 제10권2호
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    • pp.128-133
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    • 2000
  • Numerical analysis of the transport phenomena in an inductively coupled plasma reactor was conducted with two-dimensional axisymmetric model including the electromagnetic field model, electron and species density models. The spatial distribution of the charged species in the ion flux to the wafer have been calculated to examine the influence of the process conditions including antenna and reactor geometry. The antenna radius had a significant influence on the plasma state and axial ion flux distribution.

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Silylation Photo resist 공정과 Enhanced-Inductively Coupled Plasma (E-ICP) (The Silylation Photo Resist Process and the Enhanced-Inductively Coupled Plasma (E-ICP))

  • 정재성;박세근;오범환
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 하계종합학술대회 논문집
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    • pp.922-925
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    • 1999
  • The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

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Newly Designed Ion Beam Etcher with High Etch Rate

  • Cheong, Hee-Woon
    • Journal of Magnetics
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    • 제20권4호
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    • pp.366-370
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    • 2015
  • New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.

Effect of bounce resonance heating on Electron Energy Distribution Function in a small Inductively Coupled Plasma

  • 정진욱;서상훈;장홍영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.208-208
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    • 1999
  • It is found that with increasing power, the measured electron energy distribution by Langmuir probe evolves into a Druyvesteyn-like electron energy distribution in the low-pressure regime of 1mTorr in a small inductively coupled plasma. Electron bounce resonance is introduced to explain the transition of the electron energy distribution against the rf power, The energy diffusion coefficients which determine the shape of the electron energy distribution in elastic range are calculated with and without electron bounce resonance. This electron energy distribution transition is well explained by the electron bounce resonance.

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