• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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• pp.251-256
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• 2004

A concept in which laser-sustained plasmas (LSPs) are combined with inductively coupled plasmas (ICPs) is proposed. The concept is aiming at extensions of operative conditions of a CW laser thruster due to the fact that the ICP has some characteristics which are in contrast to those of LSPs. An estimation confirmed that the concept would effectively work. And a fundamental experiment was conducted. The results showed that the radio frequency magnetic field induced by a alternate current of 13.56 MHz coupled inductively with LSPs, resulting in the enlargement of the plasma region and the attainment of the enthalpy. It is expected that some improvements will enable to transfer the RF power to the work gas more effectively and to demonstrate the synergy effect between the LSPs and the ICPs.

• 한국작물학회지
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• 제49권spc1호
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• pp.269-276
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• 2004

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1704-1706
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• 2003

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1519-1528
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• 2018

The objective of the present study is the development of a comprehensive air chemical kinetic model that includes 11 species and 54 chemical reactions for the numerical investigation of air nonequilibrium inductively coupled plasmas. The two-dimensional, compressible Navier-Stokes equations coupled with the electromagnetic-field equations were employed to describe the fundamental characteristics of an inductive plasma. Dunn-Kangs 32 chemical-reaction model of air was reconstructed and used as a comparative model. The effects of the different chemical kinetic models on the flow field were analyzed and discussed at identical/different working pressures. The results theoretically indicate that no matter the working pressure is low or high, the use of the 54 chemical kinetic model presented in this study is a better choice for the numerical simulation of a nonequilibrium air ICP.

• 대한화학회지
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• 제29권4호
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• pp.382-389
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• 1985

Inductively coupled plasma(ICP)법을 이용하여 희토류원소들을 정량분석할 때 플라스마 작동 조건이 미치는 영향에 관하여 연구하였다. 플라스마 작동시 시료운반기체의 사용량을 증가시키면 희토류원소 스펙트럼선들의 검출한계는 낮아지나 이온화 방해 영향이 증가되었다. RF power의 변화는 이온화 방해에는 큰 영향을 미치지 않지만 바탕세기에 대한 스펙트럼선 세기의 비율은 RF power가 감소될수록 증가되었다. 플라스마내에서 이온화 방해 영향이 작은 위치는 스펙트럼선의 spacial profile이 최대가 되는 부분보다 약간 높은 위치이었다. 희토류원소의 분석시 많이 이용되는 스펙트럼선들의 검출한계를 측정하고 비교적 간섭영향이 작은 스펙트럼선을 선정하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.81-86
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• 2006

In this paper, we designed the cylindrical type light source that had a electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the principle of transformer, electrically equivalent circuit of cylindrical type light source was analyzed. According to the parameters of electromagnetic induction which were diameter of coil with 0.3~1.2 mm, number of turns with 4~12 turns, distance with 40~120 mm and RF power with 10~150 W, the electrical and optical properties were measured. When diameter of coil was 0.3 mm, number of turns was 8 turns and distance was 40 mm, the highest brightness of 29,730 $cd/m^2$ was shown with RF power 150 W. The relationship between electromagnetic induction and plasma discharges was shown by mode transition from E-mode to H-mode.

• 한국표면공학회지
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• 제49권1호
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• pp.98-103
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• 2016

The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.

• 한국표면공학회지
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• 제45권2호
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• pp.75-80
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• 2012

A sputter-sublimation source was tested for high rate deposition of protective coating of PEMFC(polymer electrolyte membrane fuel cell) with high electrical conductivity and anti-corrosion capability by DC biasing of a metal rod immersed in inductively coupled plasma. A SUS(stainless steel) tube, rod were tested for low thermal conductivity materials and copper for high thermal conductivity ones. At 10 mTorr of Ar ICP(inductively coupled plasma) with 2.4 MHz, 300 W, the surface temperature of a SUS rod reached to $1,289^{\circ}C$ with a dc bias of 150 W (-706 V, 0.21 A) in 2 mins. For 10 min of sputter-sublimation, 0.1 gr of SUS rod was sputter-sublimated which is a good evidence of a high rate deposition source. ICP is used for sputter-sublimation of a target material, for substrate pre-treatment, film quality improvement by high energy particle bombardment and reactive deposition.