• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.5
• /
• pp.128-133
• /
• 2013

In this paper, octagonal inductors for RFIC designs was fabricated with 90nm CMOS Technology to compare its quality factor and the effective inductance as functions of radius and number of turn. The quality factor decreases as the inner radius and the number of metal turned increase. However, the effective inductance increases with the increasing the inner radius and the number of metal turned. Therefore, the inductor structure should be decided according to the relative importance of Q-factor and inductance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.840-846
• /
• 2000

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss Al$_2$O$_3$core material were investigated. The size of the chip inductors fabricated in this work were 15$\times$10$\times$0.7㎣, 2.1$\times$1.5$\times$10㎣, and 2.4$\times$2.0$\times$1.4㎣ and copper (Cu) wire with 40 ㎛ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured suing an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 33 to 100nH and exhibit the self-resonant frequency (SRF) of .26 to 1.1 GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 60 to 80 in the frequency range of 300 MHz to 1.1 GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully. It is suggested that the thin film-type inductor is necessary to fabricate the smaller size inductors at the expence of inductance and quality factor values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.89-93
• /
• 2002

In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.1
• /
• pp.56-58
• /
• 2002

A closed form expression for the quality factor of the spiral inductor, methodologically, is presented as a function of the inductance ($L_{ind}$), metal-line width (W), spacing (S), inner and the diameter ($D_i$). For a given inductance, the dependences of quality factor on W, S, and $D_i$ are analyzed, and suggested the design optimization guidelines.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.13 no.5
• /
• pp.353-358
• /
• 2020

In the case of a general spiral inductor, the orientation of the port is affected as it has an asymmetric structure. In this paper, a single-layered spiral inductor that can have a symmetrical structure is proposed, and the simulation and frequency characteristics are analyzed. The general spiral inductor shows a large difference in frequency-inductance characteristics, frequency-quality factor characteristics, and self-resonant frequency according to the standard of the port, while the proposed symmetric spiral inductor has an inductance of 2.7nH, a quality factor of about 7.86, and a self-resonant frequency of about 14.1GHz without changing the port. Compared to the general spiral inductor having a large difference depending on the port, it was confirmed that the influence on the port direction was small. However, it was confirmed that the mutual inductance decreased compared to the occupied area of the coil, resulting in a low inductance, and the resistance of the coil increased more than the increase in the inductance, and the quality factor was also lowered. In the future, it is expected that inductance and quality factor can be improved through a 2-layer symmetrical spiral structure.

• Journal of Industrial Technology
• /
• v.25 no.B
• /
• pp.195-202
• /
• 2005

The rectifier characteristics and the quality of the input current worsens with the increase of unbalances or harmonics of the supply voltages. Rectifier input current harmonics interfere with proper power system operation, reduce rectifier power factor, and limit the power available from a given source. It is of importance to select appropriately the rectifier's output filter inductance to determine the rectifier input current waveform, the input current harmonics, and the power factor. This paper presents a quantitative analysis of single and three phase rectifier input current harmonics, total harmonic distortion, and power factor as a function of the output filter inductance under balanced and unbalanced conditions. Also, its performance under the supply voltage including harmonics be investigated. These results provide a reference for selecting reasonable rectifier's output filter inductance for given harmonics or power factor criterion.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.9
• /
• pp.4101-4106
• /
• 2011

In this study, we propose that the structures of 2-layer spiral planar inductors have a lower spiral coil and via increasing inductance in limited possession are and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The 2-layer spiral planar inductors have inductance of 3.2nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 8.2 at 2.5 GHz, SRF of 5.8 GHz. Otherwise, 1-layer spiral planar inductors have inductance of 1.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18 at 8 GHz, SRF of 19.2 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.5
• /
• pp.413-417
• /
• 1998

In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.10 no.5
• /
• pp.402-408
• /
• 2017

In this paper, we analyzed the frequency characteristics of hexagonal spiral thin-film inductor based on non-contact AC coupling for wireless signal transmission. We compared and analyzed the frequency characteristics of the rectangular spiral inductor and the hexagonal spiral inductor according to the number of turns, the line width and the line spacing of the conductor. Hexagonal spiral inductor has more number of turns to has the same inductance as rectangular spiral inductor, but the overall length of the conductors is shortened. This reduces the self inductance and increases the mutual inductance so that the overall inductance can have the same value. Also, since the overall length of the conductor is shortened and the magnetic resistance is reduced, the quality factor and the self-resonant frequency performance can be secured. The proposed hexagonal spiral thin-film inductor has the inductance of 3.54nH at 2GHz, the quality factor of max 14.00 at 5.0GHz and the self-resonant frequency at about 11.3GHz.

• Journal of IKEEE
• /
• v.12 no.3
• /
• pp.138-143
• /
• 2008

In this study, we propose that the structures of spiral inductors have the environment advantage utilizing direct-write and LAM(Laser Ablation of Microparticles) processes without process step of lithography and etching etc. of existing semiconductor process. The structures of inductors have Si thickness of 540${\mu}m$, $SiO_2$ thickness of 3${\mu}m$. The width of Cu coils and the space between segments have 30${\mu}m$, respectively, using for direct-write and LAM processes. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The inductors without underpass and via have inductance of 1.11nH over the frequency range of 300 to 800 MHz, quality-factor of maximum 38 at 5 GHz, SRF of 18 GHz. Otherwise, inductors with underpass and via have inductance of 1.12nH over the frequency range of 300 to 800 MHz, quality-factor of maximum 35 at 5 GHz, SRF of 16 GHz.