• Title/Summary/Keyword: Induced voltages

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The Birefringence of the chalcogenide As-Ge-Se-S thin films by the electric field effects (전계효과에 의한 비정질 칼코게나이드 박막에서의 복굴절 특성)

  • Son, Chul-Ho;Jang, Sun-Joo;Yeo, Cheoi-Ho;Park, Jung-I1;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1727-1729
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    • 2000
  • We has investigated the birefringence by the assisted electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Photoinduced birefringence has been studied in a chalcogenide material. We induced this thin films using linearly polarized He-Ne laser light(633nm) and detected polarized semiconductor laser light(780nm). To investigate the effect of electric field, various bias voltages applied. The result is shown that the birefringence has a higher value in +2V than others. We obtained the birefringence in the electric field effects by various voltages.

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Prebreakdown Corona Processes of Point-to-Plane Gap in $SF_{6}$ Gas ($SF_{6}$ 가스중에서 침-평판가극의 전구코로나과정)

  • 이복희;백용현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.05a
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    • pp.140-143
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    • 1992
  • This paper deals with the dielectric behaviors of $SF_{6}$ gas and prebreakdown growth caused by lightning impulse voltages in inhomogeneous field perturbed with a fixed needle-shaped protrusion on the electrode. The measuring interpretation of the external current induced by moving charges is described. The temporal growth of prebreakdown is obserbed by using a shunt and photomultiplier. The prebreakdown processes are initiated by the first streamer corona at a needle protrustion, the flashover of the main gap in the positive polarity is very sensitive to the local field and propagates into the gap with the leader mechanism. It is found that the dependence of the prebreakdown phenomena on the polarity of applied voltages is caused by the effect of space charges. In addition, the proposed measuring techniques are very useful to perform the measurements of avalanche currents, corona discharges in inhomogeneous fields ad partial discharges in voids.

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Polarity discrimination of stator windings for 3 phase induction motors by using DC differential signals between mutual inductive voltages (유도기전력의 차동신호를 이용한 3상유도전동기 고정자 권선의 극성판별)

  • Choi, Soon-Man
    • Journal of Advanced Marine Engineering and Technology
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    • v.38 no.9
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    • pp.1141-1145
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    • 2014
  • When the stator windings of 3 phase induction motors are in wrong condition, the mutual inductive responses between windings can be utilized for the purpose of diagnosing motors in that fault windings affect even the responses by DC excitation. Three phase induction motors are supposed to generate consistent inductive voltages at the remaining windings when exciting DC current is given to one of 3 windings, while the inconsistence of their voltages indicates the existence of disorder at electric motors. This study describes how the exciting current to one of three windings cause the other windings to create induced voltages, analyzing responses by transfer functions, and discloses whether or not the balance relation at two windings is normal in the way of measuring the differential voltage of their outputs. For experiment, common analog multi-testers is used for applying exciting current and measuring the output signal to confirm whether the proposed method is useful enough to be able to discriminate wrong polarities of windings onboard vessels including also the case of exciting current by AC.

Analysis on the Relation between Induced Longitudinal Voltage and Induced Noise Voltage caused by Electrified Railway system (고속전철시설에 의한 전력유도현상의 종전압과 잡음전압의 관계 분석)

  • Cho, Mun-Hwan;Lee, Snag-Mu;Cho, Pyung-Dong
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.589-592
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    • 2011
  • Induced longitudinal voltage and induced noise voltage are used in the analysis on the power induction phenomenon and it is well known that these are in the subordinate relationship. But sometimes. there is a confusing situation that these voltages have not exact subordinate relationship in the actual measurement fields. So. we have analyze the correlation between induced longitudinal voltage and induced noise voltage by using tile actual measured data in the fields of 30 urban areas and 30 rural areas.

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A Harmonic Effect Analysis on Telecommunication Line Adjacent to 22.9kV Distribution Lines (22.9kV 배전선로에서의 고조파에 의한 인접 통신선 영향 분석)

  • Kim, Hyoun-Su;Rhee, Sang-Bong;Kim, Chul-Hwan;Lyu, Seung-Heon
    • Proceedings of the KIEE Conference
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    • 2007.11b
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    • pp.151-153
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    • 2007
  • Harmonic Currents flowing on the distribution system or within an end-user facility can induce the harmful voltage to telecommunication lines. In this paper, the induced voltages on telecommunication lines in distribution systems from harmonic component are simulated and analyzed with EMTP (Electro-Magnetic Transient Program).

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enerator During the State of Torsional Interaction (비틀림 상오작용 상태에 있는 터어보 발전기의 전기적 특성)

  • Lee, Eun-Ung
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.37 no.1
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    • pp.10-17
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    • 1988
  • The torsional resonance of the generator shaft system has the possibility of inducing voltages across the stator winding because it is a carrier with the field excitation. And these torsional induced stator currents inducs the eddy current in the rotor. This paper describes the eddy current based on the double Fourier series method. The forces generating during the torsional interaction are computed using the Maxwell's magnetic stress tensor for each of the Fouriercomponennts. And then, these forces of the Fourier components are evaluated by the Parseval's theorem.

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Analysis on the Effects of the Induced Noise Voltage with the Impedance Changes of Telecommunication Line in the Power Inducting Situation (전력 유도 장애 발생 시 통신 선로의 접지체 임피던스 크기가 유도 잡음 전압에 미치는 영향 분석)

  • Choi, Mun-Hwan;Lee, Sang-Mu;Cho, Pyoung-Dong
    • 한국정보통신설비학회:학술대회논문집
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    • 2007.08a
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    • pp.227-230
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    • 2007
  • In this paper, we have analyzed the change characteristics of induced noise due to the impedance change of the ground in both ends of telecommunication line. As what affects the induced noise, there are power influence or longitudinal transverse voltages and its weighted filtered voltage. In the result of measurement, we can see the noise level change due to the change of the ground impedance, that is, as the ground impedance at either end of the telecommunication line become grower, the noise level is increased, and as the ground impedance at either end of the telecommunication line become smaller, the noise level is decreased. However, we can't define the relation between ground impedance size and PIF in these measurement results, so we will have to carry out the measurement more deeply and more practically with various conditions in environmental viewpoint and/or experimental viewpoint to establish the definition between ground impedance size and PIF.

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Hot carrier induced device degradation in amorphous InGaZnO thin film transistors with source and drain electrode materials (소스 및 드레인 전극 재료에 따른 비정질 InGaZnO 박막 트랜지스터의 소자 열화)

  • Lee, Ki Hoon;Kang, Tae Gon;Lee, Kyu Yeon;Park, Jong Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.1
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    • pp.82-89
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    • 2017
  • In this work, InGaZnO thin film transistors with Ni, Al and ITO source and drain electrode materials were fabricated to analyze a hot carrier induced device degradation according to the electrode materials. From the electrical measurement results with electrode materials, Ni device shows the best electrical performances in terms of mobility, subthreshold swing, and $I_{ON}/I_{OFF}$. From the measurement results on the device degradation with source and drain electrode materials, Al device shows the worst device degradation. The threshold voltage shifts with different channel widths and stress drain voltages were measured to analyze a hot carrier induced device degradation mechanism. Hot carrier induced device degradation became more significant with increase of channel widths and stress drain voltages. From the results, we found that a hot carrier induced device degradation in InGaZnO thin film transistors was occurred with a combination of large channel electric field and Joule heating effects.

Investigation on Oil-paper Degradation Subjected to Partial Discharge Using Chaos Theory

  • Gao, Jun;Wang, Youyuan;Liao, Ruijin;Wang, Ke;Yuan, Lei;Zhang, Yiyi
    • Journal of Electrical Engineering and Technology
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    • v.9 no.5
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    • pp.1686-1693
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    • 2014
  • In this paper, oil-paper samples composed of transformer windings were used to investigate the insulation degradation process subjected to partial discharge (PD), with artificial defects inside to simulate the PD induced insulation degradation. To determine appropriate test voltages, the breakdown time obtained through a group of accelerated electrical degradation tests under high voltages was firstly fitted by two-parameter Weibull model to acquire the average breakdown time, which was then applied to establish the inverse power law life model to choose advisable test voltages. During the electrical degradation process, PD signals were synchronously detected by an ultra-high frequency (UHF) sensor from inception to breakdown. For PD analysis, the whole degradation process was divided into ten stages, and chaos theory was introduced to analyze the variation of three chaotic parameters with the development of electrical degradation, namely the largest Lyapunov exponent, correlation dimension and Komogorov entropy of PD amplitude time series. It is shown that deterministic chaos of PD is confirmed during the oil-paper degradation process, and the obtained results provide a new effective tool for the diagnosis of degradation of oil-paper insulation subjected to PD.

A Simple Analytical Model for MEMS Cantilever Beam Piezoelectric Accelerometer and High Sensitivity Design for SHM (structural health monitoring) Applications

  • Raaja, Bhaskaran Prathish;Daniel, Rathnam Joseph;Sumangala, Koilmani
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.78-88
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    • 2017
  • Cantilever beam MEMS piezoelectric accelerometers are the simplest and most widely used accelerometer structure. This paper discusses the design of a piezoelectric accelerometer exclusively for SHM applications. While such accelerometers need to operate at a lower frequency range, they also need to possess high sensitivity and low noise floor. The availability of a simple model for deflection, charge, and voltage sensitivities will make the accelerometer design procedure less cumbersome. However, a review of the open literature suggests that such a model has not yet been proposed. In addition, previous works either depended on FEM analysis or only reported on the fabrication and characterization of piezoelectric accelerometers. Hence, this paper presents, for the first time, a simple analytical model developed for the deflection, induced voltage, and charge sensitivity of a cantilever beam piezoelectric accelerometer.The model is then verified using FEM analysis for a range of different cases. Further, the model was validated by comparing the induced voltages of an accelerometer estimated using this model with experimental voltages measured in the accelerometer after fabrication. Subsequently, the design of an accelerometer is demonstrated for SHM applications using the analytical model developed in this work. The designed accelerometer has 60 mV/g voltage sensitivity and 2.4 pC/g charge sensitivity, which are relatively high values compared to those of the piezoresistive and capacitive accelerometers for SHM applications reported earlier.