• The Korean Journal of Physiology and Pharmacology
• /
• v.12 no.2
• /
• pp.59-64
• /
• 2008

In our previous study, we found that spermine and putrescine inhibited spontaneous and acetylcholine (ACh)-induced contractions of guinea-pig stomach via inhibition of L-type voltage- dependent calcium current ($VDCC_L$). In this study, we also studied the effect of spermidine on mechanical contractions and calcium channel current ($I_{Ba}$), and then compared its effects to those by spermine and putrescine. Spermidine inhibited spontaneous contraction of the gastric smooth muscle in a concentration-dependent manner ($IC_{50}=1.1{\pm}0.11mM$). Relationship between inhibition of contraction and calcium current by spermidine was studied using 50 mM high $K^+$-induced contraction: Spermidine (5 mM) significantly reduced high $K^+$ (50 mM)-induced contraction to 37${\pm}$4.7% of the control (p<0.05), and inhibitory effect of spermidine on $I_{Ba}$ was also observed at a wide range of test potential in current/voltage (I/V) relationship. Pre- and post-application of spermidine (5 mM) also significantly inhibited carbachol (CCh) and ACh-induced initial and phasic contractions. Finally, caffeine (10 mM)-induced contraction which is activated by $Ca^{2+}$-induced $Ca^{2+}$ release (CICR), was also inhibited by pretreatment of spermidine (5 mM). These findings suggest that spermidine inhibits spontaneous and CCh-induced contraction via inhibition of $VDCC_L$ and $Ca^{2+}$ releasing mechanism in guinea-pig stomach.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.1
• /
• pp.145-150
• /
• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Proceedings of the KIEE Conference
• /
• 2002.07a
• /
• pp.130-132
• /
• 2002

Because of the continuous growth of energy consumption and also the tendency to site power lines and pipelines along the same route, the close proximity of power lines and buried metallic pipelines has become more and more frequent. Therefore there has been and still is a slowing concern about possible hazards resulting from the influence of power lines on metallic pipelines. Underground pipelines that run parallel to or in close proximity to power lines are subjected to induced voltages caused by the time-varying magnetic fields produced by the power line currents. The induced electro- motive force cause currents circulation in the pipeline and voltages between the pipeline and surrounding earth. This paper analyzes the induced voltage on the gas pipelines buried in parallel with 22.9kV distribution lines. Their magnitude depends on the length of parallelism and on the distance between distribution lines and pipeline.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.4
• /
• pp.217-222
• /
• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

• The Korean Journal of Physiology and Pharmacology
• /
• v.8 no.2
• /
• pp.101-110
• /
• 2004

Voltage-sensitive release mechanism was pharmacologically dissected from the $Ca^{2+}-induced\;Ca^{2+}\;release$ in the SR $Ca^{2+}$ release in the rat ventricular myocytes patch-clamped in a whole-cell mode. SR $Ca^{2+}$ release process was monitored by using forward-mode $Na^+-Ca^{2+}$ exchange after restriction of the interactions between $Ca^{2+}$ from SR and $Na^+-Ca^{2+}$ exchange within micro-domains with heavy cytosolic $Ca^{2+}$ buffering with 10 mM BAPTA. During stimulation every 10 s with a pulse roughly mimicking action potential, the initial outward current gradually turned into a huge inward current of $-12.9{\pm}0.5\;pA/pF$. From the inward current, two different inward $I_{NCX}s$ were identified. One was $10\;{\mu}M$ ryanodine-sensitive, constituting $14.2{\pm}2.3%$. It was completely blocked by $CdCl_2$ (0.1 mM and 0.5 mM) and by $Na^+-depletion$. The other was identified by 5 mM $NiCl_2$ after suppression of $I_{CaL}$ and ryanodine receptor, constituting $14.8{\pm}1.6%$. This latter was blocked by either 10 mM caffeine-induced SR $Ca^{2+}-depletion$ or 1 mM tetracaine. IV-relationships illustrated that the latter was activated until the peak in $30{\sim}35\;mV$ lower voltages than the former. Overall, it was concluded that the SR $Ca^{2+}$ release process in the rat ventricular myocytes is mediated by the voltage-sensitive release mechanism in addition to the $Ca^{2+}-induced-Ca^{2+}\;release$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.9 no.6
• /
• pp.802-812
• /
• 1998

Safety related to electric field exposure for the personnel of high voltage power plant and substation is of importance. To analyze the induced current influencing on human body in this paper, we calculate directly capacitance in three dimension which is complex and time consuming, as not to separate the voltage source and the induced object using a effective modeling technique. The proposed algorithm in this paper has been applied to 765 kV high voltage transmission line to evaluate human hazard for the induced current through the case study. As the results, the short circuit current of human body has been identified in the range of 0.3 mA to 6.8 mA. Closing to transmission line, this range of short current can exceed 5 mA that ANSI recommended let-go current. Therefore, it is necessary to countermeasure such as putting on conductive clothing in live-line maintenance of transmission line.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.4
• /
• pp.760-765
• /
• 2007

In this paper, the threshold voltage roll-off and drain induced barrier lowering(DIBL) have been analyzed for nano structure double gate FinFET. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics were used to calculate thermionic omission current, and WKB(Wentzel- Kramers-Brillouin) approximation to tunneling current. The threshold voltage roll-offs are obtained by simple adding two currents since two current is independent. The threshold voltage roll-off by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the threshold voltage roll-off and DIBL are very large. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects, and this process has to be developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.199-200
• /
• 2005

In this paper, the electrical characteristics and hot-carrier induced electrical performance degradations of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated. Different from the low voltage CMOS device, the only specific on-resistance was degraded due to hot-carrier stressing in LDMOS transistor. However, other electrical parameters such as threshold voltage, transconductance, and saturated drain current were not degraded after stressing. The amount of on-resistance degradation of LDMOS transistor that was implanted n-well with $1.0\times10^{13}/cm^2$ was approximately 1.6 times more than that of LDMOS transistor implanted n-well with $1.0\times10^{12}/cm^2$. Similar to low voltage CMOS device, the peak on-resistance degradation in LDMOS device was observed at gate voltage of 2.2V while the drain applied voltage was 50V. It means that the maximum impact ionization at the drain junction occurs at the gate voltage of 2.2V applying the drain voltage of 50V.

• ETRI Journal
• /
• v.26 no.3
• /
• pp.277-280
• /
• 2004

The distributions of electric field and induced second-order nonlinearity are analyzed in the periodic poling of optical fibers. A quasi-phase matching efficiency for the induced nonlinearity is calculated in terms of both the electrode separation distance between the applied voltage and generalized electrode width for the periodic poling. Our analysis of the quasi-phase matching efficiency implies that the conversion efficiency can be enhanced through adjusting the separation distance, and the electrode width can be maximized if the electrode width is optimized.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.60 no.3
• /
• pp.120-125
• /
• 2011

When we design the grounding grid, dangerous voltage ANSI/IEEE Std. 80 method has been commonly used in the domestic area. However, the suitability of the ground rules for the design environment available. However, the suitability of the ground rules for the design environment available. In this paper, sticks according to the electrode conductor in combination with the mesh in order to design the ground by the IEEE Std.80 was designed. So in this paper, we examined of IEEE Std. 80 touch voltage method marginal utility and we induced for those problems by comparison between IEEE Std. 80 touch voltage value and simulation experimentation value. Furthermore, this paper presents a new design grounding system method that complements the IEEE Std. 80 method.