• Title/Summary/Keyword: Indium tin oxide (ITO) electrode

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Influence of ITO-Electrode Deposition Method on the Electro-optical Characteristics of Blue LEDs (ITO 전극 형성 방법이 청색 발광 다이오드의 전기 광학적 특성에 미치는 영향)

  • Han, Jae-Ho;Kim, Sang-Bae;Jeon, Dong-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.11
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    • pp.43-50
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    • 2007
  • We have investigated the electro-optical characteristics and reliability of LEDs with the Indium-Tin-Oxide (ITO) electrodes formed by different deposition methods: electron beam evaporation, sputtering, and hybrid method of electron beam evaporation and subsequent sputtering. The deposition method of the ITO electrode has significant influence on the electro-optical characteristics and reliability of LEDs. The LEDs with the ITO electrodes formed by sputtering and electron beam evaporation have problems caused by sputtering damage and increased electrical resistance, respectively, and the problems have been solved by the hybrid method.

The Property Change of ITO Prepared by Reactive R.F. Sputtering in POP manufacturing Process (반응성 스퍼트링으로 형성된 ITO의 유전채 소성에 따른 특성변화)

  • Nam, Sang-Ok;Chi, Sung-Won;Sohn, Je-Bong;Huh, Keun-Do;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1411-1413
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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Work Function Increase of ITO Modified by Self Assembled Monolayer for Organic Electrical Devices (유기 디스플레이 소자를 위한 Self Assembled Monolayer의 표면개질을 이용한 ITO의 일함수 증가)

  • Jee Seung-Hyun;Kim Soo-Ho;Ko Jae-Hwan;Yoon Young-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.563-567
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    • 2006
  • Indium tin oxide (ITO) used as an electrode in organic light emitting diodes (OLEDs) and organic thin film transistors (OTFTs) was modified by a self-assembled monolayer (SAM). For device fabrication, surface of the ITO was modified by immersion in a solution including various phosphonic acid at room temperature in order to increase work function of an electrode. The work function of ITO with SAM was measured by Kelvin probe. Work function increase of 0.88 eV was observed in ITO with various SAM. Therefore, ohmic contact is achieved in an interface between ITO and organic semiconductors (pentacene). We analyzed the origin of work function increase of ITO with SAM by X-ray photoelectron spectroscopy. We confirmed that increase of oxygen bonding energy attributed to increase the work function of ITO. These results suggested that ITO with the SAM gives a high possibility for high performance of OLEDS and OTFTs.

Physical Properties of ITO/PVDF as a function of Oxygen Partial Pressure (산소 분압 조절에 따른 ITO/PVDF 박막 물성 조절 연구)

  • Le, Sang-Yub;Kim, Ji-Hwan;Park, Dong-Hee;Byun, Dong-Jin;Choi, Won-Kook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.923-929
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    • 2008
  • On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

Effects of indium tin oxide top electrode formation conditions on the characteristics of the top emission inverted organic light emitting diodes

  • Kho, Sam-Il;Cho, Dae-Yong;Jung, Dong-Geun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.714-716
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    • 2002
  • Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

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Work Function Modification of Indium Tin Oxide Thin Films Sputtered on Silicon Substrate

  • Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.351.2-351.2
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    • 2014
  • Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

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플렉서블 디스플레이용 투명전극 제조를 위한 ITO 대체소재 연구동향

  • Kim, Seon-Ok;Choe, Su-Bin;Kim, Jong-Ung
    • Ceramist
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    • v.21 no.1
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    • pp.12-23
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    • 2018
  • As the flexible displays have been considered as a breakthrough to make a new electronics category, transparent electrodes have also confronted with an emerging issue, i.e., they also need to be mechanically flexible. For this to be made possible, a transparent electrode capable of withstanding large amounts of strain must be developed. Indium tin oxide (ITO) has been one of the most widely adopted transparent electrodes for displays and other transparent electronics, mainly supported by its high electrical conductivity and optical transparency. However, its brittle nature has forced the display industry to search for other alternatives. Recently, advances in nano-material researches have opened the door for various transparent conductive materials, which include carbon nanotube, graphene, Ag and Cu nanowire, and printable metal grids. Here we reviewed recently-published research works introducing flexible displays, all of which are employing the novel candidates for a conducting material.

Direct Patterning Technology of Indium Tin Oxide Layer using Nd:$YVO_4$ Laser Beam (Nd:$YVO_4$ 레이저 빔을 이용한 인듐 주석 산화물 직접 묘화 기술)

  • Kim, Kwang-Ho;Kwon, Sang-Jik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.11
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    • pp.8-12
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    • 2008
  • For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

Growth of Electrochemical Nickel Thin Film on ITO(Indium Tin Oxide) Electrode (ITO(Indium Tin Oxide) 전극상의 전기화학적 Nickel 박막형성)

  • Kim, Woo-Seong;Seong, Jeong-Sub
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.155-161
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    • 2002
  • We studied the formation of nickel nano thin film that have various electrochromic properties. Nickel thin film having various thickness will apply photoelectronic devices, specially, electrochromic devices. These devices will apply lens, battery, glass and solar cell that have light, thin, simple and small that applied nanotechnology and quantum dot. Nickel thin film was coated by electrochemical method on ITO electrode. We studied the thin film properties by Cyclic voltammetry, Chronoamperometry. Impedance. X-ray diffraction analysis and Atomic force microscopy.

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The Enhanced Thermoforming Stability of ITO Transparent Electrode Film by Using the Conducting Polymer Thin-Film (전도성 고분자 박막을 이용한 ITO 투명 전극 필름의 열성형 안정성 향상 연구)

  • Seo Yeong Son;Seong Yeon Park;Sangsub Lee;Changhun Yun
    • Membrane Journal
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    • v.33 no.5
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    • pp.248-256
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    • 2023
  • Indium tin oxide (ITO) transparent electrode film has been widely adopted for the various applications such as display and electric vehicle. In this paper, we studied how to enhance the thermoforming stability of ITO film by applying the highly conductive Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin layer. Based on the change of sheet resistance value, the influence of the additional solvent with different boiling point was investigated for the PEDOT:PSS coating solution. In addition, by analyzing optical transmittance and Raman spectrum, we confirmed the key mechanism which determine the final electrical conductivity of the PEDOT:PSS on ITO film using an ethylene glycol solvent. The final ITO transparent electrode coated with PEDOT:PSS performed the outstanding endurance of electrical conduction even in 126% stretching condition.