• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.183-183
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• 2009

본 연구에선 ITO에 사용되는 Indium의 양을 줄이기 위해 ITO와 유사한 성질을 보이는 조성인 Indium - Zinc - Tin Turnary compound를 연구하였다. 각 조성은 Indium - Zinc - Tin Turnary compound를 기본으로 하여 Zinc site에 이종원소인 Al2O3와 Ga2O3를 doping함에 따라 변화되는 전기적 특성을 살며보았다. 분석에 사용한 Ceramic pellet은 일반적인 Ceramic process를 거쳐 제작되었다. 각 조성의 전기적 특성은 TCR meter와 Hall effect analyser를 이용하여 측정하였고, X-ray diffraction measurements(XRD), Scanning Electron microscope(SEM)를 이용하여 결정학적 특성을 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.293.2-293.2
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• 2016

The In this paper, we have fabricated the solution processed In-Ga-ZnO thin film transistors (IGZO TFTs) by varying indium and gallium ratio. The indium ratio of IGZO TFTs was changed from 1 to 5 at fixed gallium and zinc oxide atomic percent of 1:1 and gallium ratio was varied from 1 to 5 at fixed indium and zinc oxide atomic percent of 1:1. When the indium ratio was increased at fixed gallium and zinc oxide ratio of 1:1, threshold voltage was negatively shifted from 1.03 to -6.18 V and also mobility was increased from 0.018 to $0.076cm2/V{\cdot}sec$. It means that the number of carriers in IGZO TFTs were increased due to great formation of the oxygen vacancies which generate electrons. In contrast, when the gallium ratio was increased in IGZO TFTs with indium and zinc oxide ration of 1:1, the on/off current ratio was increased from $1.88{\times}104$ to $2.22{\times}105$. It is because gallium have stronger chemical bonds with oxygen than that with the zinc and indium ions that lead to the decreased in electron concentration.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• International journal of advanced smart convergence
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• 제1권1호
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• pp.61-64
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• 2012

The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.406-407
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• 2007

We prepared indium zinc oxide (IZO) thin film for cathode electrode such as an application of flat panel display by using the facing targets sputtering (FTS) method at room temperature. The effects of input power and film thickness were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, microstructure and transmittance. We could obtain properties of IZO thin films of under $10^{-3}\;{\Omega}-cm$ in resistivity and the thin films of over 90% in transmittance. Also, we obtained IZO thin films which were an amorphous structure.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• 공업화학
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• 제21권2호
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• pp.224-229
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• 2010

Transparent conducting oxide (TCO) 박막은 평판 디스플레이 산업에 널리 사용되고 있다. 화학적으로 우수한 투명전도성 Indium Zinc Oxide (IZO) 필름은 Indium Tin Oxide (ITO) 필름의 대체 물질로 관심을 끌고 있다. 본 연구에서는 90 : 10 wt%의 $In_2O_3$와 ZnO를 혼합하여 만든 타겟으로 전자빔 증착법을 이용하여 polynorbornene (PNB) 기판 위에 IZO 박막을 제조하였다. UV/Visible spectrophotometer, 4-Point Probe를 이용하여 증착 두께와 산소도입 속도에 따른 IZO 필름의 전기적 및 광학적 특성을 연구하였으며, SEM, XRD 및 XPS를 이용하여 증착된 IZO의 구조적 특성 및 표면조성비를 연구하였다.

• 한국결정성장학회지
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• 제22권1호
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• pp.15-18
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• 2012

Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.