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http://dx.doi.org/10.6111/JKCGCT.2012.22.1.015

Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method  

Lee, Sang-Hyun (Department of Inorganic Materials Engineering, Kyungpook National University)
Lee, Seung-Yup (Department of Inorganic Materials Engineering, Kyungpook National University)
Park, Byung-Ok (Department of Inorganic Materials Engineering, Kyungpook National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.22, no.1, 2012 , pp. 15-18 More about this Journal
Abstract
Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.
Keywords
Sol-gel; Indium-zinc oxide; Electrical properties and measurements; Optical properties;
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