• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1411-1413
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• 한국응용과학기술학회지
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• 제33권4호
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• pp.734-740
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• 2016

The micron-sized indium zinc tin oxide (IZTO) particles were prepared by spray pyrolysis from aqueous precursor solution for indium, zinc, and tin and organic additives such as citric acid (CA) and ethylene glycol (EG) were added to aqueous precursor solution for indium, zinc, and tin. The obtained IZTO particles prepared by spray pyrolysis from the aqueous solution without organic additives had spherical and filled morphologies, whereas the IZTO particles obtained with organic additives had more hollow and porous morphologies. The micron-sized IZTO particles with organic additives were changed fully to nano-sized IZTO particles, whereas the micron-sized IZTO particles without organic additives were not changed fully to nano-sized IZTO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. Surface resistances of micron-sized IZTO's before post-heat treatment and wet-ball milling were much higher than those of nano-sized IZTO's after post-heat treatment and wet-ball milling. From IZTO with composition of 80 wt. % $In_2O_3$, 10 wt. % ZnO, and 10 wt. % $SnO_2$ which showed a smallest surface resistance IZTO after post-heat treatment and wet-ball milling, thin films were deposited on glass substrates by pulsed DC magnetron sputtering, and the electrical and optical properties were investigated.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.646-648
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• 한국전기전자재료학회논문지
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• 제16권12호
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• pp.1115-1120
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• 2003

In this paper, we investigated the position dependent stress distribution of indium-tin-oxide (ITO) film on Polycarbonate (PC) substrate by external bending force. It was found that there are the maximum crack density at the center position and decreasing crack density as goes to the edge, In accordance with crack distribution, it was observed that the change of electrical resistivity of ITO islands is maximum at the center and decrease as goes to the edge. From the result that crack density is increasing at same island position as face plate distance (L) decreases, it is evident that the more stress is imposed on same island position as L decreases.

• 센서학회지
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• 제16권3호
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• 한국레이저가공학회지
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• 제17권1호
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• pp.13-16
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• 2014

Indium Tin Oxide (ITO) has been used widely for transparent conducting thin films. In this work, the feasibility of a laser sintering process to fabricate ITO thin films on flexible substrates is examined. Nanoparticles of ~10 nm were spin coated on a Si wafer and then sintered by a KrF excimer laser. The sintered structure was characterized by scanning electron microscopy. Polycrystalline structures were fabricated by the process without thermally damaging the substrate. The electrical resistivity of the film was reduced to ~ 1/1000 of the initial value. This work demonstrates that nanosecond laser sintering of ITO particles can be a useful tool to fabricate ITO films on various flexible substrates.

• 한국재료학회지
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• 제18권1호
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• pp.32-37
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• 2008

The electrical, optical, structural and surface properties of an indium tin oxide (ITO) film grown on a flexible PET substrate using a specially designed roll-to-roll (R2R) sputtering system as a function of the DC power, $Ar/O_2$ flow ratio, and rolling speed is reported. It was observed that both the electrical and optical properties of the ITO film on the PET substrate were critically dependent on the $Ar/O_2$ flow ratio. In addition, x-ray diffraction examination results showed that the structure of the ITO film on the PET substrate was an amorphous structure regardless of the DC power and the $Ar/O_2$ flow ratio due to a low substrate temperature, which was maintained constant by a main cooling drum. Under optimized conditions, ITO film with resistivity of $6.44{\times}10^{-4}{\Omega}-cm$ and transparency of 86% were obtained, even when prepared at room temperature. Furthermore, bending test results exhibited that R2R-grown ITO film had good flexibility which would be applicable to flexible displays and solar cells.

• 한국세라믹학회지
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• 제48권6호
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• pp.516-519
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• 2011

Indium tin oxide (ITO) coatings were made using an ITO slurry and an ITO sol. This was achieved by dispersing nanosized ITO powder in a mixed solvent without any dispersant and developing an adhesive ITO sol from indium acetate and tin tetrachloride in a mixture of DMF and n-butanol. Coating was carried out in one step by spin coating an ITO slurry, which was then followed by an ITO sol over it. Here, the sol penetrates into the nano ITO particle layers to make them adhere to each other as well as to a glass substrate. This is then followed by sintering at 500$^{\circ}C$ for 1 h to produce a uniform film consisting of ITO particles of about 50 nm and 10 nm. ITO films were obtained with sheet resistances from 450 to 1500 ohm/${\Box}$ by varying spin speed and concentration. Transmittance is higher than 90% at 550 nm.

• 한국응용과학기술학회지
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• 제34권4호
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• pp.705-716
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• 2017

본 연구에서는 0.5, 1.0, 1.5 wt%의 $TiO_2$를 함유하는 인듐-티타늄 수산화물을 졸 및 염기 첨가에 의해 얻었고, $200^{\circ}C$와 $500^{\circ}C$에서 겔화 과정을 통해 ITiO(Indium Titanate Oxide)를 얻었다. $200^{\circ}C$에서 겔화 과정 후 얻어지는 ITiO 입자가 작아서 조밀성이 있는 ITiO 타겟을 제조하였다. 0.5, 1.0, 1.5 wt%의 $TiO_2$를 함유하는 ITiO 타겟을 스퍼터링하여 ITiO 박막을 유리판위에 제작하여 비저항, 전하 이동도, 캐리어 농도를 조사하였다. 이들 박막 중에서 산소 조성이 0.4 %인 조건에서 0.5 wt% 중량% $TiO_2$를 함유하는 ITiO 타겟으로부터 제작된 ITiO 박막이 가장 낮은 비저항, 가장 큰 전하이동도 및 가장 낮은 캐리어 농도를 보임을 알 수 있었고, 얻어진 ITiO 박막의 광투과율을 측정하여 적외선 영역에서 광투과율이 ITO(Indium Tin Oxide) 박막에 비해 현저히 증가함을 발견하였다.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.