• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• 전기화학회지
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• 제11권2호
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.83-91
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• 2014

This paper presents a capacitive readout circuit for tri-axes microaccelerometer with sub-fF offset calibration capability. A charge sensitive amplifier (CSA) with correlated double sampling (CDS) and digital to equivalent capacitance converter (DECC) is proposed. The DECC is implemented using 10-bit DAC, charge transfer switches, and a charge-storing capacitor. The DECC circuit can realize the equivalent capacitance of sub-fF range with a smaller area and higher accuracy than previous offset cancelling circuit using series-connected capacitor arrays. The readout circuit and MEMS sensing element are integrated in a single package. The supply voltage and the current consumption of analog blocks are 3.3 V and $230{\mu}A$, respectively. The sensitivities of tri-axes are measured to be 3.87 mg/LSB, 3.87 mg/LSB and 3.90 mg/LSB, respectively. The offset calibration which is controlled by 10-bit DECC has a resolution of 12.4 LSB per step with high linearity. The noise levels of tri-axes are $349{\mu}g$/${\sqrt}$Hz, $341{\mu}g$/${\sqrt}$Hz and $411{\mu}g$/${\sqrt}$Hz, respectively.

• 한국결정성장학회지
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• 제4권3호
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• pp.294-305
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• 1994

초음파 분무법에 의한 $SnO_2(:F)$박막의 제막시 DBDA와 $SnCl_4.5H_2O$를 출발물질로 사용하은 경우 제막조건이 전기적, 광학적 그리고 표면형상 드의 특성에 미치는 영향에 대해 조사하였다. 박막의 비저항은 출발물질에 관계없이 용액내의 F/Sn의 비가 0.6일 때까지는 급격히 증가하였으며, $SnO_2.5H_2O$를 출발물질로 사용한 경우 DBDA의 경우보다 낮았다. 용액내의 F/Sn의 비가 1일 때 출발물질로서, $SnO_2.5H_2O$과 DBDA를 사용한 경우 광투과율은 각각 83%와 85%로서 DBDA 사용한 경우가 다소 높았다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.475-478
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• 2007

A solution for carbon nanotube based field emission displays has been designed and built. The solution makes use of structure layout to control electron beam trajectories, uniformity by use of ballasting, emission anomalies eliminated by selective carbon nanotube growth and invisible spacers to maintain the vacuum gap.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1003-1007
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• 2005

We demonstrate color video displays driven by carbon nanotube electron field emitters. These nanotubes are incorporated into the device by selective growth using low temperature chemical vapor deposition. The device structure is simple and inexpensive to fabricate, and a 45 V switching voltage enables the use of low cost driver electronics. The prototype units are sealed 4.6” diagonal displays with 726 um pixels. They represent a piece of a 42” diagonal 1280x720 high definition television. The carbon nanotube growth process is performed as the last processing step and creates nanotubes ready for field emission. No activation post-processing steps are required, so chemical and particulate contamination is not introduced. Control of the nanotube dimension, orientation, and spatial distribution during growth enables uniform, highquality, color video performance.

• 대한디지털의료영상학회논문지
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• 제6권1호
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• pp.41-49
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• 2003

• 월간포장계
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• 통권218호
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• pp.75-79
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• 2011

• 월간포장계
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• 통권373호
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• pp.75-82
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• 2024

• 미생물학회지
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• 제54권1호
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• pp.71-73
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• 2018

최근 Fusobacterium nucleatum subsp. polymorphum는 average nucleotide identity 및 genome-to-genome distance 분석법에 의해 Fusobacterium polymorphum로 재분류 되었다. F. polymorphum 그람 음성이면서, 혐기성 및 가는 섬유 모양의 세균이다. F. polymorphum은 사람의 구강 내 정상세균총의 하나이고, 치주질환의 원인 인자이다. F. polymorphum KCOM 1001 (= ChDC F119) 균주가 사람 치은염 병소의 치은연하치면세균막에서 분리되었다. F. polymorphum KCOM 1001 균주 유전체 염기서열을 해독하여 보고한다.