• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.83-91
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• 2014

This paper presents a capacitive readout circuit for tri-axes microaccelerometer with sub-fF offset calibration capability. A charge sensitive amplifier (CSA) with correlated double sampling (CDS) and digital to equivalent capacitance converter (DECC) is proposed. The DECC is implemented using 10-bit DAC, charge transfer switches, and a charge-storing capacitor. The DECC circuit can realize the equivalent capacitance of sub-fF range with a smaller area and higher accuracy than previous offset cancelling circuit using series-connected capacitor arrays. The readout circuit and MEMS sensing element are integrated in a single package. The supply voltage and the current consumption of analog blocks are 3.3 V and $230{\mu}A$, respectively. The sensitivities of tri-axes are measured to be 3.87 mg/LSB, 3.87 mg/LSB and 3.90 mg/LSB, respectively. The offset calibration which is controlled by 10-bit DECC has a resolution of 12.4 LSB per step with high linearity. The noise levels of tri-axes are $349{\mu}g$/${\sqrt}$Hz, $341{\mu}g$/${\sqrt}$Hz and $411{\mu}g$/${\sqrt}$Hz, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.294-305
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• 1994

The influence of deposition parameter on the electrical, optical andsurface morphology of $SnO_2(:F)$ films prepared by ultrasonic spray deposition using DBDA and $SnCl_4.5H_2O$ as a source material was studied. Resistivity was decreased sharply with increasing F/Sn ratio in solution up to 0.6. Depending on the source material, $SnCl_4.5H_2O$ shows lower resistivity than DBDA. When F/Sn ratio in solution was 1, optical transmittance was higher DBDA than $SnCl_4.5H_2O$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.475-478
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• 2007

A solution for carbon nanotube based field emission displays has been designed and built. The solution makes use of structure layout to control electron beam trajectories, uniformity by use of ballasting, emission anomalies eliminated by selective carbon nanotube growth and invisible spacers to maintain the vacuum gap.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1003-1007
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• 2005

We demonstrate color video displays driven by carbon nanotube electron field emitters. These nanotubes are incorporated into the device by selective growth using low temperature chemical vapor deposition. The device structure is simple and inexpensive to fabricate, and a 45 V switching voltage enables the use of low cost driver electronics. The prototype units are sealed 4.6” diagonal displays with 726 um pixels. They represent a piece of a 42” diagonal 1280x720 high definition television. The carbon nanotube growth process is performed as the last processing step and creates nanotubes ready for field emission. No activation post-processing steps are required, so chemical and particulate contamination is not introduced. Control of the nanotube dimension, orientation, and spatial distribution during growth enables uniform, highquality, color video performance.

• Korean Journal of Digital Imaging in Medicine
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• v.6 no.1
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• pp.41-49
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• 2003

• The monthly packaging world
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• s.218
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• pp.75-79
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• 2011

• The monthly packaging world
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• s.373
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• pp.75-82
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• 2024

• Korean Journal of Microbiology
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• v.54 no.1
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• pp.71-73
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• 2018

Recently, Fusobacterium nucleatum subsp. polymorphum was reclassified as Fusobacterium polymorphum based on the average nucleotide identity and genome-to-genome distance analyses. F. polymorphum is a Gram-negative, anaerobic, and filament-shaped bacterium. F. polymorphum is a part of normal flora of oral cavity and causative agent of periodontal diseases. F. polymorphum KCOM 1001 (= ChDC F119) was isolated from a human subgingival plaque of gingivitis lesion. Here, we present the complete genome sequence of F. polymorphum KCOM 1001.