• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.27-29
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• 2005

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

• 한국진공학회지
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• 제12권4호
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• pp.214-217
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• 2003

본 연구에서는 박막 증착시 발생되는 $\gamma$-전자와 같은 고에너지 입자들의 막 충돌에 의한 손상이 적은 대향타겟식 스퍼터링 장치를 이용하여 $SiO_2$/Si 기판강에 ZnO 박막을 제작하였으며, 막의 결정성에 악 영향을 미치는 초기 성장층을 제어 할 수 있는 ZnO buffer-layer를 도입하여 박막의 결정학적 특성을 알아보았다. 제작된 박막의 결정성 및 c-축 우선배향성은 XRD를 사용하여 측정하였다. 측정 결과 ZnO buffer layer의 두께 10, 20 nm와 가스압력 1 mTorr일 때 ZnO 박막의 결정성이 가장 우수함을 알 수 있었다.

• 한국재료학회지
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• 제22권11호
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• 한국세라믹학회지
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• 제32권11호
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• pp.1283-1291
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• 1995

The electrical conductivity, flammable gas response and their humidity effect of porous ZnO, added with 5wt% corn starch as the fugitive phase, were examined. Porous ZnO showed different conductivity curves during increasing and decreasing temperature, and its electrical conductivity decreased rapidly by desorption of OH- between 20$0^{\circ}C$ and 35$0^{\circ}C$ when the temperature increased in dry air. The CO gas sensitivity of starchadded ZnO samples was higher than that of ZnO without starch addition. The sensitivity of porous, starchadded ZnO to 200ppm CO gas was much less in humid atmosphere than in dry atmosphere since water vapor increased the conductivity of porous ZnO in air, but decreased the conductivity in CO. Maximum sensitivity to 200 ppm CO gas balanced by air was about 100 in dry atmosphere and about 15 in RH 23% atmosphere.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.164-164
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• 2010

The impurity doped ZnO has been extensively studied because of its optoelectric properties. GIZO (Ga-In-Zn-O) amorphous oxide semiconductors has been widely used as transparent flexible semiconductor material. Recently, various amorphous transparent semiconductors such as IZO (In-Zn-O), GIZO, and HIZO (Hf-In-Zn-O) were developed. In this work, we examined the local structures of IZO, GIZO, and HIZO. The local coordination structure was investigated by the extended X-ray absorption fine structure. The IZO, GIZO and HIZO thin films ware deposited on the glass substrate with thickness of 400nm by the radio frequency sputtering method. The targets were prepared by the mixture of $In_2O_3$, ZnO and $HfO_2$ powders. The percent ratio of In:Zn in IZO, Ga:In:Zn in GIZO and Hf:In:Zn in HIZO was 45:55, 33:33:33 and 10:35:55, respectively. In this work, we found that IZO, GIZO and HIZO are all amorphous and have a similar local structure. Also, we obtained the bond distances of $d_{Ga-O}=1.85\;{\AA}$, $d_{Zn-O}=1.98\;{\AA}$, $d_{Hf-O}=2.08\;{\AA}$, $d_{In-O}=2.13\;{\AA}$.

• 한국세라믹학회지
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• 제28권9호
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• pp.683-688
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• 1991

ZnO-P2O5 system glass containing 45 to 60 mol% ZnO has been melted at 120$0^{\circ}C$ and crystallized through heat treatment. Each condition of crystallization was determined by measurement of dilatometric softening point and DTA. The principal crystalline phase was identified as zinc metaphosphate [Zn(PO3)2] in the glasses containing 45~55 mol% ZnO and zinc pyrophosphate (Zn2P2O7) in the sample of 60 mol% ZnO with X-ray diffraction patterns. The crystalline mechanism was investigated by XRD and SEM. As the results, the specimens containing 50~60% ZnO showed the existence of oriented structure due to one-dimensional crystal growth.

• Elastomers and Composites
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• 제44권2호
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• pp.98-105
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• 2009

내이의 달팽이관은 기저막(basilar membrane)과 유모세포(hair cells)라는 두 가지 중요한 요소로 이루어져 있다. 기저막은 귀로 들어오는 소리를 주파수에 따라 분리하는 기능을 가지고 있으며, 기저막 위에 있는 유모세포는 생체전기 신호를 발생시키는 기계적 감각 수용기관이다. 인간의 생체청각기구를 모사한 인공와우와 신개념의 인공감각기관을 개발하기 위해서, 본 논문에서는 ZnO 압전 나노필라를 사용하여 인공유모세포(artificial hair cell)를 구현할 수 있는 핵심 기반 기술인 생체모사 기술을 연구하였다. 그 구체적인 방법으로 ZnO 나노필라를 저온성장법으로 유연기판에, 고온성장법으로 실리콘 웨이퍼에 성장시켰다. 유연기판과 실리콘 웨이퍼 위에 ZnO 나노필라를 성장 전에 미리 패턴을 만들었고, 기판에 선택적으로 ZnO 나노필라를 성장시켰다. 또한 ZnO 나노필라의 동적 정적 거동을 이해하기 위해 다중 물리 해석기법을 사용하여 ZnO 나노필라의 electric potential, von Mises stress, 변형량 등을 분석하였다. 본 연구에서는 ZnO 나노필라를 제작 및 패터닝하는 기술과 최적화하는 다중 물리 해석기술을 이용하여 인공 유모세포를 구현하는 핵심기술을 개발하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.184-185
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• 2006

Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.