• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.7-11
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• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.480-481
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• 2006

The n-type $(95%Bi_2Te_3-5%Bi_2Se_3)$ compound was newly fabricated by gas atomization and hot extrusion, which is considered to be a mass production technique of this alloy. The effect of powder size on thermoelectric properties of 0.04% $SbI_3$ doped $95%Bi_2Te_3-5%Bi_2Se_3$ alloy were investigated. Seebeck coefficient $({\alpha})$ and Electrical resistivity $(\rho)$ increased with increasing powder size due to the decrease in carrier concentration by oxygen content. With increasing powder size, the compressive strength of $95%Bi_2Te_3-5%Bi_2Se_3$ alloy was increased due to the relative high density. The compound with ${\sim}300\;{\mu}m$ size shows the highest power factor among the four different powder sizes. The rapidly solidified and hot extruded compound using $200[\sim}300{\mu}m$ powder size shows the highest compressive strength.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1459-1462
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• 2007

In general a thermoelectric cooler (TEC) consists of a series of P type and N type thermoelectric materials sandwiched between two wafers. When a DC current passes through these materials, three different effects take place; Peltier effect, Joule heating effect and heat transfer by conduction due to temperature difference between hot and cold plates. In this study we have developed a micro TEC using $Bi_2Te_3$ (N type) and $Bi_{0.5}Sb_{1.5}Te_3$ (P type) thin films. In order to improve that performance of a micro TEC, we made 10 um height TE legs using special PR only for lift-off. We measured COP (coefficient of performance) and temperature difference between hot and cold connectors with current.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.49-49
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• 2007

• Economic and Environmental Geology
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• v.21 no.4
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• pp.389-400
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• 1988

Minor elements such as Ag, As, Au, Bi, Cd, Cu, Co, Ni, Pb, Rb, Sb, Sr and Te were analyzed by atomic absorption spectrophotometry and induced coupled plasma spectrophotometry in order to investigate pathfinders for gold in quartz porphyry, granite porphyry and vein materials in Jeonjuil gold - silver mine, and in altered biotite granites and vein materials in Dukum gold - silver mine. In Dukum gold - silver mine, it is observed that Au contents have positive relation with As, Co, and Rb contents, but negative relation with Bi contents in altered biotite granites. Au contents have positive relation with Ag, As, Co and Te contents in vein materials. In Jeonjuil gold - silver mine, it is observed that Cd, Rb, Sr and Te are enriched near ore vein in quartz porphyry and granite porphyry. Au contents have positive relation with As, Cd, Cu, $Fe_2O_3$ and $K_2O$ in vein materials.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.2-28.2
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• 2009

군사적, 산업적 용도로 널리 활용되고 있는 적외선 검출기는 InSb, HgCdTe(MCT)와 같은 물질들을 감지 소자로 사용하고 있다. 현재 가장 많이 사용되는 MCT는 적외선의 전 영역을 감지할 수 있는 장점이 있지만, 대면적 제작이 어려운 단점이 있다. 이에 비해 InSb는 안정적인 재료의 특성, 높은 전하이동도($1.2\times10^6\;cm^2/Vs$) 그리고 대면적 소자 제작의 가능성 등이 높게 평가되어 차세대 적외선 검출소자로 각광 받고 있다. InSb 적외선 수광 소자는 1970년대부터 미국을 중심으로 이온주입, MOCVD 또는 MBE와 같은 다양한 공정을 이용하여 제작되어 왔으며, 앞으로도 군수용 제품을 비롯하여 산업전반에서 더욱 각광을 받을 것으로 예상된다. 하지만 InSb는 77 K에서 0.225 eV의 상대적으로 작은 밴드갭을 갖고 있기 때문에 누설전류로 인한 성능저하가 고질적인 문제로 대두되었고, 이를 해결하기 위한 고품질 절연막 연구가 InSb 적외선 수광 소자 연구의 주요 이슈 중 하나가 되어왔다. PECVD, photo-CVD, anodic oxidation 등의 공정을 이용하여 $SiO_2$, $Si_3N_4$, 양극산화막(anodic oxide) 등 다양한 물질들에 대한 연구가 진행되었고[1,2], 산화막과 반도체 계면에서의 열확산을 억제하여 계면트랩밀도를 최소화하기 위한 연구도 활발히 이루어졌다[3]. 하지만 InSb 소자의 성능개선을 위한 최적화된 산화막에 대한 연구는 여전히 불충분한 실정이다. 본 연구에서는 n형 (100) InSb 기판 (n = 0.2 ~ $0.85\times10^{15}cm^{-3}$ @ 77 K)을 이용하여 양극산화막, $SiO_2$, $Si_3N_4$ 등을 증착하고 절연막으로서 이들의 특성을 비교 분석하였다. 양극산화막은 상온에서 1 N KOH 용액을 이용하여 양극산화법으로 증착하였으며, $SiO_2$, $Si_3N_4$는 PECVD로 $150^{\circ}C$에서 $300^{\circ}C$까지 온도를 변화시켜가며 증착하였다. SEM분석과 XPS분석으로 두께의 균일도와 절연막의 조성, 계면확산 정도를 확인하였으며, I-V와 C-V 커브측정을 통해 각 절연막의 전기적 특성을 평가하였다. 이 분석들을 통해 각각의 공정 조건에 따른 절연막의 상태를 전기적 특성과 관련지어 설명할 수 있었다.

• Bulletin of the Korean Chemical Society
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• v.19 no.12
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• pp.1283-1293
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• 1998

A solid state chemical approach to discover new mateials with enhanced thermoelectric properties is described. The aim is to construct three-dimensional bismuth chalcogenide framework structures which contain tonically interacting alkali or alkaline earth atoms. The alkali atoms tend to have soft "rattling" type phonon modes which result in very low thermal conductivity in these materials. Another desirable feature in this class of compounds is the low crystal symmetry and narrow band-gaps. Several promising materials such as BaBiTe3, KBi6.33S10, K2Bi8S13, β-K2Bi8Se13, K2.5Bi8.5Se14, Ba4Bi6Se13, Eu2Pb2Bi6Se13, Al1+xPb4-2xSb7+xSe15 (A=K, Rb), and CsBi4Te6 are described.

• Korean Journal of Materials Research
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• v.27 no.8
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• pp.438-444
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• 2017

In this work, the effects of hydrogen reduction on the microstructure and thermoelectric properties of $(GeTe)_{0.85}(AgSbTe_2)_{0.15}$ (TAGS-85) were studied by a combination of gas atomization and spark plasma sintering. The crystal structure and microstructure of TAGS-85 were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The oxygen content of both powders and bulk samples were found to decrease with increasing reduction temperature. The grain size gradually increased with increasing reduction temperature due to adhesion of fine grains in a temperature range of 350 to $450^{\circ}C$. The electrical resistivity was found to increase with reduction temperature due to a decrease in carrier concentration. The Seebeck coefficient decreased with increasing reduction temperature and was in good agreement with the carrier concentration and carrier mobility. The maximum power factor, $3.3{\times}10^{-3}W/mK^2$, was measured for the non-reduction bulk TAGS-85 at $450^{\circ}C$.