• 마이크로전자및패키징학회지
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• 제19권1호
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• pp.33-38
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• 2012

유리기판에 n형 Bi-Te 열전박막과 p형 Sb-Te 열전박막을 진공증착하여 in-plane 열전센서를 형성한 후, 열전센서의 감지특성을 분석하였다. 열전센서를 구성하는데 사용한 n형 Bi-Te 증착박막은 -165 ${\mu}V$/K의 Seebeck 계수와 $80{\times}10^{-4}W/K^2-m$의 출력인자를 나타내었으며, p형 Sb-Te 증착박막은 142 ${\mu}V$/K의 Seebeck 계수와 $51.7{\times}10^{-4}W/K^2-m$의 출력인자를 나타내었다. 이와 같은 n형 Bi-Te 및 p형 Sb-Te 박막 15쌍으로 구성된 열전센서는 2.8 mV/K의 감지도를 나타내었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1274-1276
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• 1997

We have investigated the crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0 at.%) thin films as observing the reflectance change, XRD and SEM. The reflectance difference(${\Delta}R$) between amorphous and crystalline phases appears appoximately 20%, in all films, at 780nm(diode laser wavelength). In the case of $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film, especially, ${\Delta}R$ is about 30%. Also, amophous-to-crystalline phase change is observed at all films. Therefore, $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film can be evaluated as attractive optical recording material with low loss and high contrast ratio.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.314-320
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• 1998

In this study, we have investigated crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0) thin films prepared by thermal evaporation. The change of reflectance according to phase change from amorphous to crystalline phases with annealing and exposure of diode laser is measured b the n&k analyzer and the surface morphology between amorphous and crystalline phase is analyzed by SEM and AFM. The difference in reflectance($\DeltaR$) between amorphous and crystalline phase appears approximately 20% at the diode laser wavelength, 780nm in all prepared films. Especially, the reflectance difference,$\DeltaR$ comes up to about 30% in $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film. Also, amorphous-to-crystalline phase change is observed in all prepared films. As a result of the measurement of the reflectance using diode laser, the reflectance is increased in proportion to the laser power and exposure time in all films. As a result of observing each film with the SEM and AFM, the surface morphology of the annealed and the exposed films are evidently increased than those of as-deposited films. The fast crystallization is occurred by increasing in Te content. Therefore, we conclude that the $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ and $Te_1(Sb_{85}Ge_{15})_{99}$ thin films can be evaluated as an attractive optical recording medium with high contast ratio and fast erasing time due to crystallization.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.462-465
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• 2009

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.207-209
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• 1987

This paper reports the effect of additive elements such as Bi, Sb on degradation and hole formation of the Te-Se thin films. Changes in light transmission were used to monitor the degradation rate of thin Te films in an accelerated temperature-humidity environment. In thin accelerated temperature-humidity environment, $(Te_{86}Se_{14})_{70}Bi_{30}$ thin film was stable and $(Te_{86}Se_{14})_{50}Sb_{50}$ thin film was unstable in comparison with the other films that used in this experiment. The hole formation was carried out in the Te-based thin films.

• 마이크로전자및패키징학회지
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• 제15권3호
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• pp.1-8
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• 2008

환원분위기 열처리가 진공증착법으로 형성한 $(Bi,Sb)_{2}Te_3$박막의 열전특성에 미치는 영향을 연구하였다. 환원분위기(50% $H_2$ + 50% Ar)에서 $300^{\circ}C$의 온도로 2시간 유지하여 열처리함으로써 $(Bi,Sb)_{2}Te_3$박막의 결정성이 크게 향상되었으며 결정립 크기가 크게 증가하였다. 환원분위기 열처리에 의한 정공농도의 감소에 기인하여 $(Bi,Sb)_2Te_3$박막의 Seebeck계수가 열처리 전의 $\sim90{\mu}V/K$로부터 $\sim180{\mu}V/K$으로 증가하였다. 환원분위기 열처리에 의해 $(Bi,Sb)_{2}Te_3$ 박막의 출력인자(power factor)가 5배에서 16배 정도 향상되었으며, 환원분위기 열처리 후 $(Bi,Sb)_{2}Te_3$ 박막은 $18.6\times10^{-4}W/K^{2}-m$의 최대 출력인자를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.361-364
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by reactive ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to 1500 $\AA$ or 2000$\AA$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from 40$0^{\circ}C$ to 80$0^{\circ}C$ in flowing $O_2$or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.13-17
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• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

• 한국진공학회지
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• 제6권1호
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• pp.69-76
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• 1997

순간 증착법으로 $Bi_{0.5}Sb_{1.5}Te_3$(p형)와 $Bi_2Te_{2.4} Se_{0.6}$(n형) 박막을 제조하여 두께와 어닐 링 조건에 따른 Seebeck 계수, 전기전도도, carrier 농도 및 이동도, 열전도도, 성능지수의 변화 등 열-전기적 특성을 조사하였다. 473K에서, 1시간 진공 열처리한 결과 p형과 n형의 성능지구는 각각 $1.3{\times}10^{-3}K^{-1}$ 및 $0.3{\times}10^{-3}K^{-1}$으로 향상되었으며 두께에 크게 의존하지 않았 다. 이런 성질을 갖는 열전 박막을 소자화한 박막 온도 센서를 유리와 Teflon기판 위에 제 조하였으며, 이들의 온도 변화에 대한 열기전력, 민감도 및 시간 상수 등 센서 특성을 측정 하였다. p 및 n형의 leg 폭 1mm$\times$길이 16mm인 박막 온도 센서의 경우, Teflon 기판일 때 좋은 성능을 나타내었으며, 민감도는 2.91V/W, 시간 상수는 28.2초이었다.

• 한국세라믹학회지
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• 제51권1호
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• pp.43-50
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• 2014

We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{\circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{\times}10^{-2}{\Omega}{\cdot}cm$ at $200^{\circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{\times}10^{-3}{\Omega}{\cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${\Omega}^{-1}{\cdot}cm^{-1}$ at $400^{\circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$.