• Applied Chemistry for Engineering
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• v.31 no.3
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• pp.284-290
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• 2020

Energetic thermoplastic elastomers (ETPEs) based on glycidyl azide polymer (GAP) and carboxylated GA copolymers [GAP-ETPE and poly(GA-carboxylate)-ETPEs] were synthesized using isophorone diisocyanate (IPDI), dibutyltin dilaurate (DBTDL), 1,4-butanediol (1,4-BD), and soft segment oligomers such as GAP and poly(GA-carboxylate). The synthesized GAP-ETPE and poly(GA-carboxylate)-ETPEs were characterized by Fourier transform infrared (FT-IR), gel permeation chromatography (GPC), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), universal testing machine (UTM), calorimetry and sensitivity towards friction and impact. DSC and TGA results showed that the introduction of carboxylate group in GAP helped to have better thermal properties. Glass transition temperatures of poly(GA-carboxylate)-ETPEs decreased from -31 ℃ to -33 ℃ compared to that of GAP-ETPE (-29 ℃). The first thermal decomposition temperature in poly(GA_0.8-octanoate_0.2)-ETPE (242 ℃) increased in comparison to that of GAP-ETPE (227 ℃). Furthermore, from calorimetry data, poly(GA-carboxylate)-ETPEs exhibited negative formation enthalpies (-6.94 and -7.21 kJ/g) and higher heats of combustion (46713 and 46587 kJ/mol) compared to that of GAP-ETPE (42,262 kJ/mol). Overall, poly(GA-carboxylate)-ETPEs could be good candidates for a polymeric binder in solid propellant due to better energetic, mechanical and thermal properties in comparison to those of GAP-ETPE. Such properties are beneficial to application and processing of ETPE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.127-128
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• 2006

The proposed differential LC cross-coupled VCO is implemented in InGap/GaAs HBT process for an adaptive Global Positioning system(GPS) application. Two filtering capacitors are used at the base of output buffer amplifiers at the both sides of the core m order to improve phase noise characteristics. The VCO produced a phase noise of -133 dBc/Hz at 3MHz offset frequency from the carrier frequency of 1.489GHz and the second harmonic suppression is significantly suppresed up to -49dBc/Hz in simulation result. The three pairs of BC diodes are integrated m the tank circuit to increase the VCO Tunning range.

• The Korean Journal of Physiology and Pharmacology
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• v.11 no.3
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• pp.107-112
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• 2007

Gap junction protein, connexin, is expressed in endothelial cells of vessels, glomerulus, and renin secreting cells of the kidney. The purpose of this study was to investigate the role of gap junction in renin secretion and its underlying mechanisms using As 4.1 cell line, a renin-expressing clonal cell line. Renin release was increased proportionately to incubation time. The specific gap junction inhibitor, 18-beta glycyrrhetinic acid (GA) increased renin release in dose-dependent and time-dependent manners. Heptanol and octanol, gap junction blockers, also increased renin release, which were less potent than GA. GA-stimulated renin release was attenuated by pretreatment of the cells with amiloride, nifedipine, ryanodine, and thapsigargin. GA dose-dependently increased intracellular $Ca^{2+}$ concentration, which was attenuated by nifedipine, nimodipine, ryanodine, and thapsigargin. However, RP-cAMP, chelerythrine, tyrphostin A23, or phenylarsine oxide did not induced any significant change in GA-stimulated increase of intracellular $Ca^{2+}$ concentration. These results suggest that gap junction plays an important role on the regulation of renin release and intracellular $Ca^{2+}$ concentration in As 4.1 cells.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.49 no.3
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• pp.133-144
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• 2000

Genetic Algorithm(GA) has been known as a method of solving large-scaled optimization problems with complex constraints in various applications. Since a major drawback of the GA is that it needs a long computation time, the hardware implementations of Genetic Algorithm Processors(GAP) are focused on in recent studies. In this paper, a hardware-oriented GA was proposed in order to save the hardware resources and to reduce the execution time of GAP. Based on steady-state model among continuos generation model, the proposed GA used modified tournament selection, as well as special survival condition, with replaced whenever the offspring's fitness is better than worse-fit parent's. The proposed algorithm shows more than 30% in convergence speed over the conventional algorithm in simulation. Finally, by employing the efficient pipeline parallelization and handshaking protocol in proposed GAP, above 30% of the computation speed-up can be achieved over survival-based GA which runs one million crossovers per second (1㎒), when device speed and size of application are taken into account on prototype. It would be used for high speed processing such of central processor of evolvable hardware, robot control and many optimization problems.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2247-2252
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• 2012

In this paper, we produced CIGS thin film by co-evaporation method. During the process, substrate temperature and Ga/(In+Ga) composition ratio was altered to observe the change of resistivity and absorbance spectra measurements. As substrate temperature increased, resistivity decreased and as Ga/(In+Ga) composition ratio increased from 0.30 to 0.72, band gap also increased with the range of 1.26eV, 1.30eV, 1.43eV, 1.47eV. With the constant condition of composition ratio, resistivity decreased with increased thickness of the thin film. On this experiment, we assumed that optical absorbance ratio and optical current will be increased with CIGS thin film fabrication.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.655-660
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• 2001

Surface photovoltage spectroscopy was used to study $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$ grown by metalorganic chemical vapor deposition(MOCVD). Energy gap related transition in GaAs and $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$ were observed. By measuring the frequency dependence of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$, we observed that SPV line shape does not chance, whereas the amplitude change. This results is due to the difference in the lifetimes of the photocarriers in GaAs and in $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$. We also have evaluated the parameters that describe the temperature dependences of the band gap.

• Journal of the Optical Society of Korea
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• v.1 no.2
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• pp.100-103
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• 1997

We perform degenerate and nondegenerate pump-probe experiments on bulk GaAs at 100 K below the band gap. We mostly observe a negative differential transmission signal both in the degenerate and nondegenerate experiments. We interpret our signal as due to two-photon absorption. This negative signal has a different origin from the normally considered band gap renormalization for resonant excitations.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.895-898
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• 2014

The wavelength dependence of the photoacoustic signal for n-type GaAs semiconductors in the region of the band-gap energies was investigated. The significant changes in the phase and amplitude of the photoacoustic signal near the band-gap absorption wavelengths were observed to occur when the Si-doping densities in GaAs were varied. Particularly, the first derivatives of the photoacoustic phase vs. wavelength graphs were evaluated and fitted with single Gaussian functions. The peak centers and the widths of the Gaussian curves clearly showed linear relationships with the log values of the Si-doping densities in n-type GaAs semiconductors. It is proposed that the wavelength-dependent PA spectroscopy can be used as a simple and nondestructive method for measuring the doping densities in bulk semiconductors.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.353-359
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• 2010

We report the surface photovoltage (SPV) properties of $In_{0.49}Ga_{0.51}P$/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and $In_{0.49}Ga_{0.51}P$ transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.