• Title/Summary/Keyword: InGaAs pHEMT

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Improved Breakdown Voltage Characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMT with an Oxidized GaAs Gate

  • I-H. Kang;Lee, J-W.;S-J. Kang;S-J. Jo;S-K. In;H-J. Song;Kim, J-H.;J-I. Song
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.2
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    • pp.63-68
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    • 2003
  • The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.

Design and Fabrication of 40 ㎓ MMIC Double Balanced Star Mixer using Novel Balun (새로운 발룬 회로를 이용한 40 ㎓ 대역 MMIC 이중 평형 Star 혼합기의 설계 및 제작)

  • 김선숙;이종환;염경환
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.3
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    • pp.258-264
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    • 2004
  • In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

2DEG Calculation in InP HEMT (InP HEMT의 2DEG계산)

  • Hwang, K.C.;Ahn, H.K.;Han, D.Y.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.316-318
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    • 2003
  • 양자우물 구조를 사용한 HEMT(High Electron Mobility Transistor)는 고속 스위칭 소자와 초고주파 통신용 소자 및 센서에에 우수한 동작특성을 갖고 있다. 본 논문에서는 AlInAs/InP HEMT의 heterostructure를 파동방정식과 Poisson 방정식을 self-consistent 한 방법으로 해석하였다. 파동방정식으로 junction의 전자농도를 계산하고, Poisson 방정식을 해석하여 potential profile에 의한 전자 농도가 heterostructure에서 self-consistent가 되도록 연산하였다. 끝으로 AlInAs/InP 구조에서 positively ionized donor, valance band에서의 hole, conduction band의 free electron과 구조내의 2DEG를 AlGaAs/GaAs 및 AlGaAs/InGaAs/GaAs와 비교하였다.

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Fabrication and Characterization of $0.2\mu\textrm{m}$ InAlAs/InGaAs Metamorphic HEMT's with Inverse Step-Graded InAlAs Buffer on GaAs Substrate

  • Kim, Dae-Hyun;Kim, Sung-Won;Hong, Seong-Chul;Paek, Seung-Won;Lee, Jae-Hak;Chung, Ki-Woong;Seo, Kwang-Seok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.2
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    • pp.111-115
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    • 2001
  • Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.

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밀리미터파 MMIC의 개발 현황 및 전망

  • 염경환
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.2
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    • pp.21-34
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    • 2000
  • Millimeter wave is expected as the unlimited useful frequency resources for the next generation wireless communication services. In the past, its usage was limited to the military warfare due to lack of millimeter devices. The development of GaAs pHEMT in 1980 and the progress in the processing technologies made the new consumer wireless services possible utilizing millimeter waves. Specially, most of passive components necessary for circuit design can be integrated with GaAs pHEMTs and this removes the difficulty in assembly unavoidable in hybrid design. InP based pHEMTs developed later possess all the properties of GaAs and it shows many advantages in higher frequency applications. In this paper, the status and trends of those devices and MMICs are presented and the future developing trends is also described.

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Growth and Characterization of InGaP/InGaAs p-HEMI Using Compound Source MBE (Compound Source MBE를 이용한 InGaP/InGaAs p-HEMT 구조의 성장 및 특성 분석)

  • Kim, J.H.;S.J. Kang;S.J. Jo;J.D. Song;Lee, Y.T.;J.I. Song
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.16-19
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    • 2000
  • DC and low frequency noise characteristics of InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs) grown by compound source MBE are investigated for temperature range of 150K to 370K. Equivalent input noise spectra( $S_{iv}$ ) were measured as a function of frequency and temperature. $S_{iv}$ was measured to be 3.4 $\times$ 10$^{-12}$ $V^2$/ Hz at 1kHz for 1.3 X 50${\mu}{\textrm}{m}$$^2$InGaP/InGaAs p-HEMT at room temperature. Measurements of the low-frequency noise spectra of the p-HEMT as a function of temperature show that the trap with an activation energy level around 0.589 eV is a dominant trap that accounts for the low-frequency noise behavior of the device. The normalized extrinsic gm frequency dispersion of the p-HEMT. was as low as 2.5% at room temperature, indicating that the device has well-behaved low-frequency noise characteristics. Sub-micron (0.25 $\times$ 50${\mu}{\textrm}{m}$$^2$) gate p-HEMT showed $f_{T}$ and $f_{max}$ of 40GHz and 108GHz, respectively.y.y.

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Design and fabrication of a Novel 60 GHz GaAs pHEMT Resistive Double Balanced Star MMIC Mixer (새로운 60 GHz 대역 GaAs pHEMT 저항성 이중평형 Star 혼합기 MMIC의 설계 및 제작)

  • 염경환;고두현
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.6
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    • pp.608-618
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    • 2004
  • In this paper, modifying the diode star double balanced mixer of Maas, a novel resistive 60 GHz pHEMT MMIC star mixer is suggested. Due to star configuration, troublesome IF balun for ring configuration FET mixer is not necessary. In addition, the sysematic design method of dual balun through EM simulation is suggested rather than the design by inspection as Maas. The mixer circuit is fabricated as MMIC on CPW base using 0.1 um GaAs pHEMT Library of MINT in Dongguk University. The size is 1.5 ${\times}$ 1.5 $\textrm{mm}^2$ and its performance is adjustable by DC supply. It can be operated as both up and down converters and it shows the conversion loss of about 13∼18 ㏈ over the full V-band frequencies.

A Study on the Ohmic Contacts and Etching Processes for the Fabrication of GaSb-based p-channel HEMT on Si Substrate (Si 기판 GaSb 기반 p-채널 HEMT 제작을 위한 오믹 접촉 및 식각 공정에 관한 연구)

  • Yoon, Dae-Keun;Yun, Jong-Won;Ko, Kwang-Man;Oh, Jae-Eung;Rieh, Jae-Sung
    • Journal of IKEEE
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    • v.13 no.4
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    • pp.23-27
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    • 2009
  • Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

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Photodetection Characteristics of InAlAs/InGaAs/InP HEMT (InAlAs/InGaAs/InP HEMT의 광검출 특성)

  • 강효순;최창순;최우영;장경철;서광석
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.02a
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    • pp.146-147
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    • 2003
  • 무선 통신 시스템이 발달하고 정보의 양이 많아짐에 따라 고주파를 이용한 통신 시스템에 대한 수요가 증가하고 있다. 최근 이러한 고주파 통신 시스템을 optical fiber를 이용하여 구현(Radio-on-fiber system)하는 연구가 주목받고 있다. 무선 고주파 통신 시스템에서는 많은 수의 안테나 기지국이 필요하게 되는데 optical fiber를 이용하면 적은 전송 손실로 기지국간의 연결이 가능하게 된다. 안테나 기지국의 구축을 위해서 최근 InP High Electron Mobility Transistor(HEMT)를 이용하여 광 검출을 구현하는연구가 활발히 진행되고 있다. (중략)

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Large Signal Unified Model for GaAs pHEMT using Modified Curtice Model (새롭게 수정된 Curtice 모델을 이용한 GaAs pHEMT 대신호 통합모델 구축)

  • 박덕종;염경환;장동필;이재현
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.4
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    • pp.551-561
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    • 2001
  • In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.

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