• 한국진공학회지
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• 제18권5호
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• pp.352-357
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• 2009

본 연구에서는 1.1 eV의 에너지대역을 흡수할 수 있는 InAs 양자점구조와 1.3 eV의 에너지 대역을 흡수 할 수 있는 InGaAs 양자우물구조를 이용한 텐덤형 태양전지의 구조를 1D poisson을 이용해 설계하고, 분자선 에피택시 장비를 이용하여 각각 5, 10, 15층씩 쌓은 양자점 및 양자우물구조를 삽입하여 p-n접합을 성장하였다. Photoluminescence (PL) 측정을 이용한 광학적특성 평가에서 양자점 5층 및 양자우물 10층을 삽입한 구조의 PL 피크가 가장 높은 상대발광강도를 나타냈으며, 각각 1.1 eV 및 1.3 eV에서 57.6 meV 및 12.37 meV의 Full Width at Half Maximum을 나타내었다. 양자점의 밀도 및 크기는 Reflection High-Energy Electron Diffraction system과 Atomic Force Microscope를 이용해 분석하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 I-V 측정을 통하여 GaAs층의 두께(20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. GaAs 층의 두께가 30 nm 및 50 nm의 터널접합에서는 backward diode 특성을 나타낸 반면, 20 nm GaAs층의 GaAs/AlGaAs 터널접합에서는 다이오드 특성 곡선을 확인하였다.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.8-9
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• 2000

최근 광통신 분야의 발전을 바탕으로 경제적이고 간편한 밀리미터파의 발생, 변조 및 검파를 위한 밀리미터파-Photonics 기술연구가 활발히 진행되고 있다. 이러한 밀리미터파-Photonics 시스템을 구현하기 위해서 필요한 중심 부품중에 하나가 고출력, 광대역 광 검출기이다. 이러한 요구조건을 만족시키는 광 검출기로서 VMDP(Velocity Matched Distributed Photodetector)는 기존의 광 검출기 구조에 비해 월등한 성능을 나타내고 있다. 기존에 AlGaAs/GaAs를 이용해서 0.86$mu extrm{m}$에서 작동하는 VMDP가 제시되었으나 이 형태는 현 광통신 시스템에 적용하기에는 부적당한 파장대역이다. 이에 본 연구에서는 InGaAsP/InP를 기반으로 1.55$\mu\textrm{m}$에서 작동하는 VMDP를 설계하고자 한다. (중략)

• 전자공학회논문지D
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• 제35D권5호
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• pp.80-86
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• 1998

Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

• 전자공학회논문지A
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• 제31A권9호
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• 전기전자학회논문지
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• 제13권4호
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• pp.23-27
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• 2009

실리콘 기판 상에 MBE (molecular beam epitaxy)로 형성된 GaSb 기반 p-channel HEMT 소자를 제작하기 위하여 오믹 접촉 형성 공정과 식각 공정을 연구하였다. 먼저 각 소자의 절연을 위한 메사 식각 공정 연구를 수행하였으며, HF기반의 습식 식각 공정과 ICP(inductively coupled plasma)를 이용한 건식 식각 공정이 모두 사용되었다. 이와 함께 소스/드레인 영역 형성을 위한 오믹 접촉 형성 공정에 관한 연구를 진행하였으며 Ge/Au/Ni/Au 금속층 및 $300^{\circ}C$ 60초 RTA공정을 통해 $0.683\;{\Omega}mm$의 접촉 저항을 얻을 수 있었다. 더불어 HEMT 소자의 게이트 형성을 위한 게이트 리세스 공정을 AZ300 현상액과 citric산 기반의 습식 식각을 이용하여 연구하였으며, citric산의 경우 소자 구조에서 캡으로 사용된 GaSb와 베리어로 사용된 AlGaSb사이에서 높은 식각 선택비를 보였다.

• 전자공학회논문지D
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• 제34D권5호
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• 대한물리치료과학회지
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• 제7권2호
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• pp.533-543
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• 2000

This study was designed to evaluate the analgesic effect of low power GaAsAl laser on the pain threshold of mechanical stimulation using different treatment points, acupuncture point (zusanli) and non-acupuncture points(back). Furthermore, we investigated the analgesic effect of low power GaAsAl laser using the different duration and intensity of laser in mechanical stimulation induced pain behavior. The results were summarized as follows: 1. The threshold of mechanical stimulation was significantly increased by GaAsAl laser stimulation into zusanli point after 15 and 30 min after laser stimulation(P<05). However, the laser stimulation into non-acupoint did not affect the pain threshold of mechanical stimulation. with dose dependent manner. 2. In order to investigate the analgesic effects of BV depending upon different intensities of laser stimulation, the experimental animals were divided into three groups: 3 mW treated group, 6 mW treated group and 10 mW treated group. The low power GaAsAl laser stimulation was applied into zusanli acupoint for 30 min with different intensity of laser stimulation. Six and ten mW of laser stimulation significantly increased the pain threshold of mechanical stimulation at 15 min after laser stimulation as compared to that of control group(P<.05). Moreover, the analgesic effect of 10 mW laser stimulation was maintained for 30 min after laser stimulation (P<.05). 3. Finally, we tested the analgesic effect of 10 mW laser stimulation using different duration such as 10 min, 30 min or 1 hr after application of mechanical stimulation. In 30 min treatment group, the pain threshold of mechanical stimulation was increased at 15min and 30min after laser stimulation(P<.05). However, laser stimulation for 60 min dramatically increased the pain threshold of mechanical stimulation at 0 min after laser stimulation and the analgesic effect of laser stimulation was observed until 1 hr after laser stimulation. In conclusion, these data apparently demonstrate that low power GaAsAl laser has analgesic effect on mechanical induced pain model in rats. In addition, the treated point, intensity and duration of laser stimulation should be concerned before clinical application for pain management purpose.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.91-97
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• 2009

The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680$^{\circ}C$ and 700 $^{\circ}C$ on n-type GaAs (100) substrate with 2$^{\circ}$ and 6$^{\circ}$ tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.171-171
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• 2012

In this study, we fabricated the high-brightness AlGaInP-based red light emitting diodes (LED)s using by direct printing technique and inductive coupled plasma (ICP) reactive ion etching (RIE). In general, surface roughening was fabricated by wet etching process to improve the light extraction efficiency of AlGaInP-based red LED. However, a structure of the surface roughening, which was fabricated by wet etching, was tiled cone-shape after wet etching process due to crystal structure of AlGaInP materials, which was used as top-layer of red LED. This tilted cone-shape of surface roughening can improve the light extraction of LED, but it caused a loss of the light extraction efficiency of LED. So, in this study, we fabricated perfectly cone shaped pattern using direct printing and dry etching process to maximize the light extraction efficiency of LED. Both submicron pattern and micron pattern was formed on the surface of red LED to compare the enhancement effect of light extraction efficiency of LEDs according to the diameter of sapphire patterns.After patterning process using direct printing and ICP-RIE proceeded on the red LED, light output was enhanced up to 10 % than that of red LED with wet etched structure. This enhancement of light extraction of red LED was maintained after packaging process. And as a result of analyze of current-voltage characteristic, there is no electrical degradation of LED.

• 한국진공학회지
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• 제7권4호
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• pp.328-333
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• 1998

저압 유기금속 화학증착법을 이용하여 (001) InP 기판 위에 격자 일치된 InAlAs 에 피층 성장 결과 620~$700^{\circ}C$범위에서 성장 온도가 증가할수록 산소 유입량의 감소 때문으로 생각되는 광학적 성질의 향상이 관찰되었으나 $750^{\circ}C$이상의 고온에서는 InP완충층의 열화에 의한 결정성의 감소가 발견되었다. 또한, AsH3의 유량이 증가됨에 따라 성장된 InAlAs층의 Al함유량이 증가하는 현상이 관찰되었고, 이는 Al-As와 In-As의 bond strength 차이로 설 명하였다. InGaAs/InAlAs 단일 양자우물구조에서 측정된 우물두께에 따른 photoluminescence peak energy는 계산 값과 잘 일치하였고, high resolution x-ray diffraction 측정을 통하여 뚜렷한 satellite peak와 fine thickness fringe들이 관찰되는 우수 한 계면특성을 가지는 다중 양자우물구조가 성장됨을 확인하였다.