• Title/Summary/Keyword: InGaAlP/GaAs

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Investigation of a nonreciprocal phase shift properties of optical waveguide isolators with a magneto-optic layer (자기 광학적층을 갖는 광 도파로 아이솔레이터 제작을 위한 비가역적 위상변위에 대한 연구)

  • Yang, Jeong-Su;Kim, Young-Il;Byun, Young-Tae;Woo, Deok-Ha;Lee, Seok;Kim, Sun-Ho;Yi, Jong-Chang
    • Korean Journal of Optics and Photonics
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    • v.14 no.2
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    • pp.142-145
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    • 2003
  • The nonreciprocal phase shift characteristics of infinite slab optical waveguides with magneto-optic materials in the cladding layer was calculated at 1.55 ${\mu}{\textrm}{m}$ for optical isolators. The infinite slab waveguide structures considered in this paper were as follows. rho magneto-optic materials used as a cladding layer were Ce:YIG and LNB(LuNdBi)$_3$(FeAl)$_{5}$)$_{12}$,). Their specific Faraday rotations Θ$_{F}$ are 4500$^{\circ}$/cm, 500$^{\circ}$/cm at wavelength 1.55 ${\mu}{\textrm}{m}$ respectively. The guiding layer with multi-quantum well structure was used, and it consists of 1.3Q and InGaAs. In order to investigate the effect of evanescent field penetrating the cadding, layer, guiding mode characteristics were calculated for the cases when the substrate is InP and air. We calculated the minimum lengths of 90$^{\circ}$ nonreciprocal phase shifters and their optimum guiding layer thicknesses in various optical waveguide structures.res.s.

Development of Red CaAlSiN3:Eu2+ Phosphor in Glass Ceramic Composite for Automobile LED with High Temperature Stability (고온 안정성이 우수한 자동차 LED용 Red CaAlSiN3:Eu2+ 형광체/Glass 세라믹 복합체 개발)

  • Yoon, Chang-Bun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.324-329
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    • 2018
  • Red phosphor in glasses (PiGs) for automotive light-emitting diode (LED) applications were fabricated with 620-nm $CaAlSiN_3:Eu^{2+}$ phosphor and Pb-free silicate glass. PiGs were synthesized and mounted on high-power blue LED to make a monochromatic red LED. PiGs were simple mixtures of red phosphor and transparent glass powder. After being fabricated with uniaxial press and CIP at 300 MPa for 20 min, the green bodies were thermally treated at $550^{\circ}C$ for 30 min to produce high dense PiGs. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30% phosphor had a full sintered density. Changes in photoluminescence spectra and color coordination were studied by varying the thickness of plates that were mounted after optical polishing. As a result of the optical spectrum and color coordinates, PiG plate with $210{\mu}m$ thickness showed a color purity of 99.7%. In order to evaluate the thermal stability, the thermal quenching characteristics were measured at temperatures of $30{\sim}150^{\circ}C$. The results showed that the red PIG plates were 30% more thermally stable compared to the AlGaInP red chip.

Design of In Plane P-N Junction Thin-Film Thermoelectric Device (In Plane 방식의 P-N Junction 박막열전소자 제작)

  • Kwon, Sung-Do;Kim, Eun-Jin;Lee, Yun-Ju;Yoon, Seok-Jin;Ju, Byeong-Kwon;Kim, Jin-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.178-178
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    • 2008
  • 초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.

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Element Mobility during the Weathering of Granitic Gneiss in the Yoogoo Area, Korea. (유구지역 화강암질 편마암의 풍화작용에 따른 원소의 거동)

  • 이석훈;김수진
    • Journal of the Mineralogical Society of Korea
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    • v.14 no.1
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    • pp.39-51
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    • 2001
  • 공주군 유구면 일대의 화강암질 편마암의 풍화작용에 따른 원소의 거동과 pH와 이차광물과의 관계를 XRF, ICP-AES, ICP-MS를 이용한 원소분석결과를 통하여 검토하였다. 이 지역의 암석은 pH6 내외의 산성환경, 침철석, 아나타제와 같은 다양한 이차광물을 생성하면서 심각한 화학조성의 변화를 초래했다. 주원소의 화학조성을 이용한 풍화지수는 토양층에서 79~88로 모암 중의 사장석이 용해되고 흑운모가 변질되어 캐올리광물의 생성이 활발한 방향으로 풍화작용이 진행되었다. 지표층으로 가면서 Al에 대한 주 원소의 거동은 Si, Ca, Na, K, P가 감소하고 Fe, Ti, Mn이 증가하는 경향을 보이며 pH가 낮은 풍화단면에서 주 원소의 변화량이 더 크다. 이 풍화대에서 Mg은 거의 일정하다. Li, As 모든 전이원소는 pH가 감소함에 따라 증가하며 특히 이들 원소는 Fe의 함량과 비례해서 증가해 침철석과 공침하였거나 표면에 흡착되어 있는 것으로 보인다. Ga은 Fe와 비례하기는 하지만 변화량은 전 풍화단면에서 일정하다. Zr, Mo, Sn, Cd은 pH에 변화에 상관없이 일정한 반면에 Rb, Sr, Ba, Y, Pb, Th, U 등은 감소하는 경향을 보인다. 특히 Rb 과 Sr은 Ca에 비례해서 감소한다. 희토류원소는 전 풍화단면에서 감소하는 경향을 보이는데 $Al_2$$O_3$에 대한 상대적인 변화량을 보면 경희토류원소는 사프롤라이트(saprolite)하부와 상부에서 부화되어 있고 중부 사프롤라이트와 토양층에서 감소하는 반면에 중희토류원소는 사프롤라이트 하부와 상부에서 감소하고 중부사프롤라이트 및 토양층에서 부화되는 경향을 보인다. 전반적으로 희토류원소의 원자번호가 클수록 손실율이 커진다. 이 풍화단면에서 원소의 거동은 각 풍화층의 pH와 생성된 이차광물의 조성에 지배를 받았다.

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Lack of Association between CYP1A1 M2 and M4 Polymorphisms and Breast Carcinoma in Jordanian Women: a Case-Control Study

  • Amrani, Iman;Bulatova, Nailya;Awidi, Abdalla;Yousef, Al-Motassem;Melhem, Jamal Masad;Al-Masri, Mahmoud;Tahoun, Laila Abu
    • Asian Pacific Journal of Cancer Prevention
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    • v.17 no.1
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    • pp.387-393
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    • 2016
  • Background: CYP1A1 is a candidate gene for low-penetrance breast cancer susceptibility, as it plays an important role in the metabolism of carcinogens and estrogens. Purpose: The objective of this study was to assess the association between M2 (A2455G, Ile462Val) and M4 (C2453A, Thr461Asn) polymorphisms in CYP1A1 and breast cancer risk among Jordanian women and in subgroups stratified by menopausal status and smoking history. Materials and Methods: Blood samples were collected from 112 breast cancer female patients and 115 age-matched controls who underwent breast cancer screening with imaging and showed negative results (BI-RADS I or BI-RADS II). Genotyping was performed using the PCR-RFLP technique. Results: No statistically significant overall association was found between breast cancer risk and CYP1A1 M2 genotypes (p= 0.55; OR = 0.77; 95% CI= 0.32 - 1.83) nor with the M4 polymorphism (p= 0.95; OR= 0.95; 95% CI= 0.51 - 1.88). Analysis of subgroups defined by menopausal status or smoking history also revealed no association with these polymorphisms. Furthermore, the four identified haplotypes (AC; AA; GC and GA) were equally distributed among cases and controls, and haplotype analysis showed a strong linkage disequilibrium of both studied loci in either cases or controls (D'=1). Conclusions: Based on the study results, CYP1A1 M2 and M4 polymorphisms do not seem to play a major role in breast cancer risk among Jordanian females.

Effects of Low Power Laser for the Expression of Substance P in the Burned Skin of the Rats (흰쥐의 피부화상 후 저강도 레이저 조사가 Substance P의 발현에 미치는 영향)

  • Koo Hyun-Mo;Lee Sun-Min;Nam Ki-Won;Kim Souk-Boum;Cheon Song-Hee;Kang Jong-Ho;Kim Jin-Sang
    • The Journal of Korean Physical Therapy
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    • v.15 no.3
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    • pp.239-250
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    • 2003
  • This study was performed to investigate the effect of low power laser irradiation on Substance P(SP) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with $75^{\cric}C$ water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, 3 and 4 postwounding. Control leasions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The expression of evaluated Substance P(SP) immunohistochemistry on rabbit anti-SP The results of this study wereas follows 1. The Substance P was expressed in the lamina I and II of dorsal horn of spinal cord. In expression of SP, the lesion of control group made SP to more induce significantly than experimental leasions. 2. SP immunoreactivity in burned leasion of spinal cord were decreased markedly 4 days after burns, and decreased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have a pain release effect in the burned skin of the rats.

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Evaluation of 1.3-㎛ Wavelength VCSELs Grown by Metal Organic Chemical Vapor Deposition for 10 Gb/s Fiber Transmission

  • Park, Chanwook;Lee, Seoung Hun;Jung, Hae Won;An, Shinmo;Lee, El-Hang;Yoo, Byueng-Su;Roh, Jay;Kim, Kyong Hon
    • Journal of the Optical Society of Korea
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    • v.16 no.3
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    • pp.313-317
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    • 2012
  • We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

The Characteristics of Multi-layer Structure LED with MgxZn1-xO Thin Films (MgxZn1-xO를 활용한 Multi-layer 구조 LED 특성에 관한 연구)

  • Son, Ji-Hoon;Kim, Sang-Hyun;Jang, Nak-Won;Kim, Hong-Seong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.10
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    • pp.811-816
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    • 2012
  • The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

고밀도 나노선을 이용한 태양전지 구현 및 특성 분석

  • Kim, Myeong-Sang;Hwang, Jeong-U;Ji, Taek-Su;Sin, Jae-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.323-323
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    • 2014
  • 기존의 태양전지 기술은 기술 장벽이 매우 낮고 대량 생산을 통한 단가 절감하는 구조를 가지고 있어 대규모 자본을 가진 후발 기업에게 잠식되기 쉽다. 그러나, III-V족 화합물 반도체를 이용한 집광형 고효율 태양전지는 기술 장벽이 매우 높은 기술 집약 산업이므로 독자적인 기술을 확보하게 되면 독점적인 시장을 확보 할 수 있어 미래 고부가 가치 산업으로 적합하다. 특히 III-V족 화합물 반도체 태양전지는 III족 원소(In, Ga, Al)와 V족 원소(As, P)의 조합으로 0.3 eV~2.5 eV까지 밴드갭을 가지는 다양한 박막 제조가 가능하여 다양한 흡수 대역을 가지는 태양전지 제조가 가능하기 때문에 다중 접합 태양전지 제작이 가능하다. 또한 III-V 화합물 반도체는 고온 특성이 우수하여 온도 안정성 및 신뢰성이 우수하고, 또한 집광 시 효율이 상승하는 특성이 있어 고배율 집광형 태양광 발전 시스템에 가장 적합하다. Si 태양전지의 경우 100배 이하의 집광에서 사용하나, III-V 화합물 반도체 태양전지의 경우 500~1000배 정도의 고집광이 가능하다. 이러한 특성으로 III-V 화합물 반도체 태양전지 모듈 가격을 낮출 수 있고, 따라서 Si 태양전지 시스템과 비교하여 발전 단가 면에서 경쟁력을 확보할 수 있다. III-V 화합물 반도체는 다양한 밴드갭 에너지를 가지는 박막 제조가 용이하고, 직접천이(direct bandgap) 구조를 가지고 있어 실리콘에 비해 광 흡수율이 높다. 또한 터널정션(tunnel junction)을 이용하면 광학적 손실과 전기적 소실을 최소화 하면서 다양한 밴드갭을 가지는 태양전지를 직렬 연결이 가능하여 한 번의 박막 증착 공정으로 넓은 흡수대역을 가지며 효율이 높은 다중접합 태양전지 제작이 가능하다. 이에 걸맞게 본연구에서는 화학기상증착장치(MOCVD)를 이용하여 InAsP 나노선을 코어 쉘 구조로 성장하여 태양전지를 제작하였다. P-type Dopant로는 Disilane (Si2H6)을 전구체로 사용하였다. 또한 Benzocyclobutene (BCB) 폴리머를 이용하여 Dielectric을 형성하였고 Sputtering 방법으로 증착한 ZnO을 투명 전극으로 사용하여 나노선 끝부분과 실리콘 기판에 메탈 전극을 형성하였다. 이를 통해 제작한 태양전지는 솔라시뮬레이터로 측정했을때 최고 7%에 달하는 변환효율을 나타내었다.

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Analysis of Electrical/optical Characteristics Using Asymmetric MQW Structures for Deep-UV LEDs (비대칭 MQW 구조를 이용한 Deep-UV LED의 전기적/광학적 특성)

  • Son, Sung-Hun;Kim, Su-Jin;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.5
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    • pp.10-15
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    • 2012
  • In this work, we proposed the asymmetric MQW structure with gradually increased or decreased well thickness from n-layers to p-layers in order to improve the performance of DUV-LEDs. We report the simulation results of electrical/optical characteristics by using the SimuLED program. From the simulation results, we found that B structure with thickness of the wells gradually increased from the n-side to the p-side has the same forward voltage(Vf) as standard structure, but the light output power (Pout) was improved by a factor of 1.17 at 20mA compared with those of the standard structure.