• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.335-340
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• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1998.11a
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• pp.125-125
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• 1998

Glycyrrhizin (18$\beta$-glycyrrhetic acid $\beta$-D-glucuronyl a-D-glucuronic acid, GL), a main component of liquore extract (Glycyrrhiza glabra), is ingested orally as a component in the oriental medicine. By human intestinal bacteria, glycyrrhizin (18$\beta$-glycyrrhetinic acid $\beta$-D-glucuronyl a-D-glucuronic acid, GL) was metabolized to glycyrrhetinic acid (GA): main pathway metabolizing GL to GA by glucuronidases of Bacteroides J-37 (Kim et al., 1997) and Eubacterium sp strain GLH (Akao et al., 1987) and minor pathway metabolizing GL to GA via 18$\beta$-glycyrrhetic acid D-glucuronic acid (GAMG) by $\beta$-glucuronidase of Streptococcus LJ-22 and glucuronidases of Bacteroides J-37 / E. coli. $\beta$-Glucuronidase from Streptococcus LJ-22 hydrolyzed GL to GAMG, not GA. $\beta$-Glucuronidase of Streptococcus LJ-22 hydrolyzed $\beta$-glucuronic acid conjugates of polysaccharides rather than aglycone-$\beta$-glucuronides Optimal pH of Streptococcus LJ-22 $\beta$-glucuronidase was 5-6 and its molecular weight was 250 kDaltons. Km for GL was 0.37mM.

• Journal of electromagnetic engineering and science
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• v.9 no.4
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• pp.218-222
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• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.164-167
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• 2002

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO$_2$, GaAs, CaAsP, and AlCaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• Electrical & Electronic Materials
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• v.12 no.8
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• pp.39-45
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• 1999

Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.63-63
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• 2012

편광분석법(ellipsometry)은 대상 물질의 유전율 함수의 실수부와 허수부를 Kramers-Kronig 관계식의 도움 없이 그 물질상수를 정확히 측정할 수 있는 매우 우수한 기술이다. 이 기술의 큰 장점 중 하나는 빛의 편광상태의 변화를 이용한 비파괴적인 방법으로써 실시간 측정이 가능하며, 박막의 두께측정의 오차범위는 0.1 nm 이하로써 매우 정확하다는 것이다. 본 연구자는 이러한 우수한 측정 기술인 편광분석법을 고진공의 분자살박막증착장치(MBE) 와 결합하여 AlSb, AlP의 유전율 함수를 측정하였다. Al 계열을 포함하는 반도체 화합물은 Al의 산소친화력이 강해 대기 중에서 순수한 유전율 함수를 얻기가 불가능하다. 하지만 본 연구실에서 초고진공 상태의 MBE 챔버에서 시료를 성장시키는 동시에 실시간으로 편광분석기를 이용하여 측정하였고, 지금까지 발표된 결과들 중 가장 순수한 상태의 AlSb 유전율 함수를 얻어낼 수 있었다. 또한 순수한 AlP의 유전함수를 측정할 수 있었고, 이는 편광분석기를 이용한 최초의 실험결과로써 이차미분을 이용한 전이점 분석결과 이론적인 전자밴드구조에서 E1, E1+${\Delta}1$, E2에 해당하는 밴드갭들을 확인할 수 있었다. 또한 표면의 원자배열 구조와 실시간으로 일어나는 그들의 역학적인 현상들에 관한 정보를 얻을 수 있는 surface photoabsorption (SPA)를 metalorganic chemical vapor deposition (MOCVD)에 장착하여 실시간 모니터링이 가능하도록 하였다. SPA를 이용하여 GaAs/AlGaAs 양자우물구조의 성장을 원자층 수준으로 실시간 모니터링을 할 수 있었다. 그리고 SPA를 이용하여 MOCVD 안에서 InP에 As가 흡착 및 탈착되는 현상을 분석하여, As의 흡착이 두 단계에 의해 이루어짐을 분석하였다. 그리고 편광분석법의 빠르고 정확한 측정 기술을 규칙적인 구조체에서 전자기파의 회절을 구할 수 있는 Rigorous Coupled-Wave Analysis (RCWA) 계산방법과 결합하여 나노구조의 기하학적인 모양을 정확하고 빠르게 구할 수 있었다. 본 연구를 위해 규칙적인 3차원 Si 구조체 제작하여 편광분석기로 측정하고 $SiO_2$와 표면 거칠기를 고려하여 RCWA로 분석한 결과, 규칙적인 Si 구조와 산화막 층까지 정확하게 분석할 수 있음을 확인하였다. 또한 규칙적인 나노구조분석 연구를 넘어 불규칙적인 나노구조에 대한 분석 가능성을 보이기 위해 InAs 양자점을 증착하여 분석하였고, 이를 통해 편광분석법과 RCWA를 이용하여 불규칙적인 나노구조의 모양과 크기, 분포의 분석이 가능함을 보였다.

• Journal of Korean Physical Therapy Science
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• v.9 no.2
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• pp.99-109
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• 2002

We designed the experiments to elucidate the anti-inflammatory effect of low power laser stimulation on acupoint or non-acupoint using arthrogenic solution induced poly arthritis animal model. In order to achieve the experimental purpose, change in body weight paw edema, pathological changes in inflammed pint and the serum interlukin-6 level were measured after arthritis induction in acupoint later stimulated group, non acupoint laser stimulated group and non treated control animal. The results were summerized as follows: 1. The consistent increase in body weight was observed in the normal animal during whole experimental period, while the induction of arthritis significantly suppressed increase in body weight from the 15 day after arthritis induction. Especially, non treated animal group showed more suppressive effect on increase in body weight as compared to that of low power laser stimulated groups (P<0.05). 2. Low power laser stimulation on acupoint (Zusanli) significantly inhibited edema in the left side paw from the 12th day after arthritis induction as compared to that of non treated animals. This suppressive effect on paw edema was maintained until the end of experiment. 3. Laser treatment on acupoint dramatically suppressed the radiological change (i.e. new bone proliferation and soft tissue swelling) caused by arthritis as compared to that of non treated group animals. 4. Low power laser treatment reduced the increase in serum interlukin-6 caused by arthritis induction to levels observed in the normal animals. In conclusion, the results of the present study demonstrated that low power laser stimulation on acupoint has potent anti-inflammatory effect on arthritis. Thus it is recommended that low power laser be used for long term treatment of arthritis induced inflammation. However, further study is necessary to clarify the possible side effect of laser treatment depending upon intensity and duration of stimulation.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.99-105
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• 1997

The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.

• Journal of Korean Physical Therapy Science
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• v.7 no.2
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• pp.545-558
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• 2000

The present study was designed to investigate the effect of low power GaAsAl laser on Fos expression in the spinal cord induced by noxious mechanical stimulation. Noxious mechanical stimulation was applied to the right hind paw following 30min of low power laser treatment using different intensity and treatment point and the resulting Fos expression in the spinal cord dorsal horn was compared to that obtained in rats exposed only to the noxious mechanical stimulation. The results were summarized as follows: 1. In intact control rats, only a few Fos like immunoreactive(Fos-IR) neurons were evident in the lumbar spinal cord dorsal horn. Similarly, following prolonged inhalation anesthesia, Fos-IR neurons were absent in the dorsal horn of the lumbar spinal cord. In animals treated with noxious mechanical stimulation, neurons with nuclei exhibiting Fos immunostaining were distributied mainly in the medial half of ipsilateral laminae I-V at lumbar segments L3-5. These findings directly indicated that prolonged anesthesia used in this study did not affect the Fos expression in the spinal cord dorsal horn of intact animals and noxious mechanical stimulation treated animals. 2. In acupoint treated animals, 10mW of laser stimulation, not 3mW intensity, significantly reduced the number of Fos immunoreactive neurons in the spinal dorsal horn induced by noxious mechanical stimulation(P<.01). However, the supressive effect of low power laser stimulatin was not observed in 3m Wand 10m W of laser stimulation into non-acupoint. These data indicate that 10mW of low power laser stimulation into acupoint is capable of inhibiting the expression of Fos in the dorsal horn induced by noxious mechanical stimulation. In conclusion, these findings raise the possibility that low power laser stimulation into acupoint may be a promising alternative medicine therapy for the mechanical stimulation induced pain in the clinical field.