• 제목/요약/키워드: InAs quantum dots

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양자점 부품과 이를 활용한 고연색성 조명 연구 (Study on Quantum Dot Components and Their Use in High Color Rendering Lighting)

  • 고재현
    • 한국광학회지
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    • 제35권3호
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    • pp.95-106
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    • 2024
  • 일반 백색 LED의 연색성을 보완하기 위해 적색 양자점을 선택적으로 활용함으로써 고연색성 조명을 구현하는 연구가 최근 활발하다. 본 논문에서는 최근 이루어지고 있는 원격 양자점 부품 연구 및 이를 활용한 고연색성 조명 개발의 현황에 대해 소개한다. 특히 양자점 부품이 배치되는 조명의 광구조 최적화에 있어서 중요하게 고려해야 할 다양한 요소를 집중적으로 논의함으로써 향후 고연색성 조명 연구의 방향 및 전망까지 다루고자 했다.

The Current Status and Future Outlook of Quantum Dot-Based Biosensors for Plant Virus Detection

  • Hong, Sungyeap;Lee, Cheolho
    • The Plant Pathology Journal
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    • 제34권2호
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    • pp.85-92
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    • 2018
  • Enzyme-linked immunosorbent assay (ELISA) and polymerase chain reaction (PCR), widely used for the detection of plant viruses, are not easily performed, resulting in a demand for an innovative and more efficient diagnostic method. This paper summarizes the characteristics and research trends of biosensors focusing on the physicochemical properties of both interface elements and bioconjugates. In particular, the topological and photophysical properties of quantum dots (QDs) are discussed, along with QD-based biosensors and their practical applications. The QD-based Fluorescence Resonance Energy Transfer (FRET) genosensor, most widely used in the biomolecule detection fields, and QD-based nanosensor for Rev-RRE interaction assay are presented as examples. In recent years, QD-based biosensors have emerged as a new class of sensor and are expected to open opportunities in plant virus detection, but as yet there have been very few practical applications (Table 3). In this article, the details of those cases and their significance for the future of plant virus detection will be discussed.

텐덤형 태양전지를 위한 InAs 다중 양자점과 InGaAs 다중 양자우물에 관한 연구 (Design and Growth of InAs Multi-Quantum Dots and InGaAs Multi-Quantum Wells for Tandem Solar Cell)

  • 조중석;김상효;황보수정;장재호;최현광;전민현
    • 한국진공학회지
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    • 제18권5호
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    • pp.352-357
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    • 2009
  • 본 연구에서는 1.1 eV의 에너지대역을 흡수할 수 있는 InAs 양자점구조와 1.3 eV의 에너지 대역을 흡수 할 수 있는 InGaAs 양자우물구조를 이용한 텐덤형 태양전지의 구조를 1D poisson을 이용해 설계하고, 분자선 에피택시 장비를 이용하여 각각 5, 10, 15층씩 쌓은 양자점 및 양자우물구조를 삽입하여 p-n접합을 성장하였다. Photoluminescence (PL) 측정을 이용한 광학적특성 평가에서 양자점 5층 및 양자우물 10층을 삽입한 구조의 PL 피크가 가장 높은 상대발광강도를 나타냈으며, 각각 1.1 eV 및 1.3 eV에서 57.6 meV 및 12.37 meV의 Full Width at Half Maximum을 나타내었다. 양자점의 밀도 및 크기는 Reflection High-Energy Electron Diffraction system과 Atomic Force Microscope를 이용해 분석하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 I-V 측정을 통하여 GaAs층의 두께(20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. GaAs 층의 두께가 30 nm 및 50 nm의 터널접합에서는 backward diode 특성을 나타낸 반면, 20 nm GaAs층의 GaAs/AlGaAs 터널접합에서는 다이오드 특성 곡선을 확인하였다.

Inverted CdSe@ZnS Quantum Dots Light-Emitting Diode using Low-Work Function Polyethylenimine Ethoxylated (PEIE) modified ZnO

  • Kim, Choong Hyo;Kim, Hong Hee;Hwang, Do Kyung;Suh, Kwang S;Park, Cheol Min;Choi, Won Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.148-148
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    • 2015
  • Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

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InP Quantum Dot - Organosilicon Nanocomposites

  • Dung, Mai Xuan;Mohapatra, Priyaranjan;Choi, Jin-Kyu;Kim, Jin-Hyeok;Jeong, So-Hee;Jeong, Hyun-Dam
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.191-191
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    • 2012
  • InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

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다층 InAs 양자점을 이용한 장파장 적외선 수광소자에 관한 연구 (Studies on Long-wavelength Infrared Detector using Multiple Stacked InAs Quantum Dot Layers)

  • 김종욱;오재응;홍성철
    • 대한전자공학회논문지SD
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    • 제37권8호
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    • pp.42-47
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    • 2000
  • 분자선결정성장법을 이용하여 자기구성 양자점들을 high electron mobility transistor (HEMT)의 체널 영역에 삽입하여, 양자점내의 inter-subband transition을 이용한 전파장 적외선 수광소자를 제작하였다. 제작된 소자는 180 K 이상의 온도에서 InAs 양자점의 전자에 대한 강한 구속력으로 인해 낮은 암전류 특성을 보이며 7${\mu}m$에서 11${\mu}m$까지의 넓은 수광영역을 나타내었다. 9.4${\mu}m$에서 peak 광전류가 검출되었으며 이때의 검출율은 $1.93{\times}10^{10}cmHz^{1/2}/W$ 였다. 장파장 적외선 검출에 따른 광전류는 가해진 전압에 대하여 전계효과트랜지스터와 같은 전류-전압 특성을 가지며, 인가된 전압이 증가함에 따라 증가된 암전류에 의하여 광전류가 감소하는 특성을 보여주고 있다.

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피부로 침투된 양자점 나노입자의 분포와 전자현미경 분석 시 발견되는 오스뮴산 결합물과의 구분 (Distribution of the Quantum Dot Nano-particles that Penetrate Skin and Distinction of Combined Osmium Tetroxide in Electron Microscopic Analysis)

  • 최기주;박상용;이정민;신헌섭;양정은;이돈길;;이태후
    • Applied Microscopy
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    • 제42권1호
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    • pp.1-7
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    • 2012
  • 나노입자의 가능성은 의생물학 분야의 연구자들에 의해 열띤 토론이 되어지고 있다. 우리는 일종의 추적자인 양자점(quantum dots)을 이용하여 피부로 침투된 나노입자의 분포를 전자현미경으로 확인하는 과정에서 나타나는 문제점과 이를 해결하기 위한 방법을 제안해 보고자 하였다. 나노입자는 피부의 각질층과 모공을 통한 일부 피지세포 내부까지 침투되는 것을 확인하였다. 이 과정에서 오스뮴산이 세포 내 지방산과의 결합에 의해 나노입자 형태의 축적물이 생성되는 것을 확인할 수 있었고, 이것은 의도한 나노입자(양자점)의 분포를 확인하는데 간섭을 주는 요인이 되는 문제점을 발견하였다. 이를 해결하기 위해, 양자점과 오스뮴산을 달리 처리하는 방법을 통하여 각각의 사진에서 나타나는 나노입자의 진위 여부를 비교하므로 의도한 나노입자의 정확한 분포를 확인할 수 있었다. 이러한 결과는 의생물 분야에서 생체내 나노입자의 분포를 확인하기 위한 연구 시 오차를 감소시키고, 보다 정확한 분석을 제공할 수 있을 것으로 기대해 본다.

마그네트론 코스퍼터링법으로 형성한 SiO2/Si 양자점 초격자 구조의 특성 (Characteristics of SiO2/Si Quantum Dots Super Lattice Structure Prepared by Magnetron Co-Sputtering Method)

  • 박영빈;김신호;하린;이현주;이정철;배종성;김양도
    • 한국재료학회지
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    • 제20권11호
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    • pp.586-591
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    • 2010
  • Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

A Modified Quantum Dot-Based Dot Blot Assay for Rapid Detection of Fish Pathogen Vibrio anguillarum

  • Zhang, Yang;Xiao, Jingfan;Wang, Qiyao;Zhang, Yuanxing
    • Journal of Microbiology and Biotechnology
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    • 제26권8호
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    • pp.1457-1463
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    • 2016
  • Vibrio anguillarum, a devastating pathogen causing vibriosis among marine fish, is prevailing in worldwide fishery industries and accounts for grievous economic losses. Therefore, a rapid on-site detection and diagnostic technique for this pathogen is in urgent need. In this study, two mouse monoclonal antibodies (MAbs) against V. anguillarum, 6B3-C5 and 8G3-B5, were generated by using hybridoma technology and their isotypes were characterized. MAb 6B3-C5 was chosen as the detector antibody and conjugated with quantum dots. Based on MAb 6B3-C5 labeled with quantum dots, a modified dot blot assay was developed for the on-site determination of V. anguillarum. It was found that the method had no cross-reactivity with other than V. anguillarum bacteria. The detection limit (LOD) for V. anguillarum was 1 × 103 CFU/ml in cultured bacterial suspension samples, which was a 100-fold higher sensitivity than the reported colloidal gold immunochromatographic test strip. When V. anguillarum was mixed with turbot tissue homogenates, the LOD was 1 × 103 CFU/ml, suggesting that tissue homogenates did not influence the detection capabilities. Preenrichment with the tissue homogenates for 12 h could raise the LOD up to 1 × 102 CFU/ml, confirming the reliability of the method.