• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.533-534
• /
• 2012

Colloidal III-V semiconductor nanocrystal quantum dots (NQDs) have attracted attention as they can be applied in various areas such as LED, solar cell, biological imaging, and so on because they have decreased ionic lattices, lager exciton diameter, and reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals is limited by difficulties in control nucleation because the molecular bonds in III-V semiconductors are highly covalent compared to II-VI compounds. There is a need for a method that provides rapid and scalable production of highly quality nanoparticles. We present a new synthetic scheme for the preparation of InP nanocrystal quantum dots using new phosphorus precursor, P(SiMe2tbu)3. InP nanocrystals from 530nm to 600nm have been synthesized via the reaction of In(Ac)3 and new phosphorus precursor in noncoordinating solvent, ODE. This opens the way for the large-scale production of high quality Cd-free nanocrystal quantum dots.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.92-92
• /
• 2010

Replacing the existing illumination with solid-state lighting devices, such as light-emitting diodes (LEDs) are expected to reduce energy consumption and environmental pollution as they provide better efficiency and longer lifetimes. Currently, white light emitting diodes are composed of UV or blue LED with down-converting materials such as highly luminescent phosphors White light-emitting diodes (LED) were fabricated with multi-shell nanocrystal quantum dots for enhanced luminance and improved stability over time. Multi-shell quantum dots (QDs) were synthesized through one pot process by using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. As prepared, the multi-shell QD has cubic lattice of zinc-blend structure with semi-spherical shape with quantum yield of higher than 60 % in solution. Further, highly fluorescent multi-shell QD was deposited on the blue LED, which resulted in QD-based white LED with high luminance with excellent color rendering properties.

• Applied Chemistry for Engineering
• /
• v.28 no.5
• /
• pp.571-575
• /
• 2017

In this study, cadmium telluride (CdTe) quantum dots were synthesized by using ultrasonic irradiation method. Optical properties and structural characteristics of the CdTe quantum dots were analyzed by two main variables; the ratio of the precursor and the synthesis time. As the synthesis time increased, the band gap reduction was observed with the growth of CdTe quantum dots. As for the luminescence properties, the red shift appeared at 510~610 nm wavelength range. Also, it was confirmed that the red shift occurs rapidly as the ratio of Te increases. According to PL peak intensity, the highest intensity was shown at 180 to 240 min. Structural characteristics of CdTe quantum dots were investigated through XRD and TEM, and the cubic zinc blend structure was observed. The size of quantum dots was about 2.5 nm and uniformly dispersed when the synthesis time took 210 min. In addition, the apparent crystallinity was discovered in FFT image.

• ETRI Journal
• /
• v.26 no.5
• /
• pp.475-480
• /
• 2004

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

• Membrane Journal
• /
• v.30 no.5
• /
• pp.293-306
• /
• 2020

Increasing harmful effects of climate change, such as its effect on water scarcity, has led to a focus on developing effective water purification methods to obtain pure water. Additionally, rising levels of water pollution is increasing levels of environmental degradation, calling for sources of water treatment to remove contaminants. To purify water, osmotic processes across a semipermeable membrane can take place, and recent studies are showing that incorporating nanoparticles, including carbon quantum dots (CQDs), graphene carbon dots (GQDs), and graphene oxide quantum dots (GOQDs) are making thin film composite (TFC) membranes more effective by increasing water flux while maintaining similar levels of salt rejection, increasing the hydrophilicity of the membrane surface, showing bactericidal properties, exhibiting antifouling properties to prevent accumulation of bacteria or other microorganisms from reducing the effectiveness of the membrane, and more. In the review, the synthesis process, applications, functionality, properties, and the role of several types of quantum dots are discussed in the composite membrane for water purification.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.1
• /
• pp.27-32
• /
• 2000

We have studied the carrier relaxation of InAs/GaAs modulation-doped quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-ressolved spectroscopy. At the excitation below GaAs barrier band gap, the relaxation processes become very slow, implying to observe the phonon bottleneck effects. On the other hand, at the excitation far above GaAs band gap, phonon bottleneck effects are broken down due to Auger processes. Increasing modulation-doping concentration, the relaxation times, by virtue of Coulomb scattering between electrons in GaAs doped layer and carriers in InAs quantum dots, are observed to become fast.

• Journal of the Korean Vacuum Society
• /
• v.18 no.3
• /
• pp.208-212
• /
• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Korean Journal of Optics and Photonics
• /
• v.17 no.3
• /
• pp.278-284
• /
• 2006

We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.6
• /
• pp.547-555
• /
• 2022

Color conversion layer refers to a layer that converts the blue light emitted from the backlight into the red and green light. Heavy metal-free quantum dots and perovskite nanocrystals have attracted great attention as base materials for color conversion layers due to their outstanding optical characteristics. Here, we review recent advances in the development of color conversion layers based on quantum dots. First, we overview the representative optical characteristics of quantum dots and perovskite nanocrystals, and then introduce printing techniques for color converting layers including photolithography, inkjet printing, and nanoimprinting. Finally, we conclude this review with a brief perspective.

• Journal of the Korean Electrochemical Society
• /
• v.10 no.4
• /
• pp.257-261
• /
• 2007

The electronic properties of quantum dots can be tuned by changing the size of particles without any change in their chemical composition. CdSe quantum dots, the sizes of which were controlled by changing the concentrations of Cd and Se precursors, were adsorbed on $TiO_2$ photoelectrodes and used as sensitizers for photovoltaic cells. For applications of CdSe quantum dot as sensitizers, $CdSe/TiO_2$ films on conducting glass were employed in a sandwich-type cell that incorporated a platinum-coated conductive glass and an electrolyte consisting of an $I^-/I_3^-$ redox. The fill factor (FF) and efficiency for energy conversion ($\c{c}$) of the photovoltaic cell was 62 % and 0.32 %, respectively.