• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.170-172
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• 2002

The epilayer of vertically stacked, self-assembled InAs Quantum Dots (QDs)was grown by MBE with solid sources in non-cracking K-cells, and the sample was fabricated to a FET structure using a conventional technology. The device characteristic and performance were studied. At 77K and room temperature, the threshold voltage shift values are 0.75V and 0.35 V, which are caused by the trapping and detrapping of electrons in the quantum dots. Discharging and charging curves form the part of a hysteresis loop to exhibit memory function. The electrical injection of confined electrons in QDs products the threshold voltage shift and memory function with the persistent electron trapping, which shows the potential use for a room temperature application.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.47-47
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• 2011

There have been numerous efforts to enhance the efficiency of light-emitting diodes (LEDs) by using low dimensional structures such as quantum dots (QDs), wire (QWRs), and wells (QWs). We demonstrate QD/QWR/QW hybrid structured LEDs by using nano-scaled pyramid structures of GaN with ~260 nm height. Photoluminescence (PL) showed three multi-peak spectra centered at around 535 nm, 600 nm, 665 nm for QWs, QWRs, and QDs, respectively. The QD emission survived at room temperature due to carrier localization, whereas the QW emission diminished from 10 K to 300 K. We confirmed that hybrid LEDs had zero-, one-, and two-dimensional behavior from a temperature-dependent time-resolved PL study. The radiative lifetime of the QDs was nearly constant over the temperature, while that of the QWs increased with increasing temperature, due to low dimensional behavior. Cathodoluminescence revealed spatial distributions of InGaN QDs, QWRs, and QWs on the vertices, edges, and sidewalls, respectively. We investigated the blue-shifted electroluminescence with increasing current due to the band-filling effect. The hybrid LEDs provided broad-band spectra with high internal quantum efficiency, and color-tunability for visible light-emitting sources.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1502-1505
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• 2018

We present a design for hybrid circular Bragg gratings (hCBGs) for efficiently extracting single-photons emitted by InAs quantum dots (QDs) embedded in GaAs. Finite-difference time-domain simulations show that a very high photon collection efficiency (PCE) up to 96% over a 50 nm bandwidth and pronounced Purcell factors up to 19 at cavity resonance are obtained. We also systematically investigate the geometry parameters, including the $SiO_2$ thickness, grating period, gap width and the central disk radius, to improve the device performances. Finally, the PCEs and the Purcell factors of QDs located at different positions of the hCBG are studied, and the results show great robustness against uncertainties in the location of the QD.

• Current Optics and Photonics
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• v.4 no.3
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• pp.161-173
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• 2020

Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 10⁵ cd/㎡, we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.281.2-281.2
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• 2013

Since heavy metal ions included in water or food resources have critical effects on human health, highly sensitive, rapid and selective analysis for heavy metal detection has been extensively explored by means of electrochemical, optical and colorimetric methods. For example, quantum dots (QDs), such as semiconductor QDs, have received enormous attention due to extraordinary optical properties including high fluorescence intensity and its narrow emission peaks, and have been utilized for heavy metal ion detection. However, the semiconductor QDs have a drawback of serious toxicity derived from cadmium, lead and other lethal elements, thereby limiting its application in the environmental screening system. On the other hand, Graphene oxide (GO) has proven its superlative properties of biocompatibility, unique photoluminescence (PL), good quenching efficiency and facile surface modification. Recently, the size of GO was controlled to a few nanometers, enhancing its optical properties to be applied for biological or chemical sensors. Interestingly, the presence of various oxygenous functional groups of GO contributes to opening the band gap of graphene, resulting in a unique PL emission pattern, and the control of the sp2 domain in the sp3 matrix of GO can tune the PL intensity as well as the PL emission wavelength. Herein, we reported a photoluminescent GO array on which heavy metal ion-specific DNA aptamers were immobilized, and sensitive and multiplex heavy metal ion detection was performed utilizing fluorescence resonance energy transfer (FRET) between the photoluminescent monolayered GO and the captured metal ion.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• Advances in nano research
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• v.2 no.4
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• pp.211-217
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• 2014

The self-assembled strain-induced sub-micrometric islands and nanostructures are grown from In-As-Sb-P quaternary liquid phase on InAs (100) substrates in Stranski-Krastanow growth mode. Two samples are under consideration. The first sample consists of unencapsulated islands and lens-shape quantum dots (QDs) grown from expressly inhomogeneous liquid phase. The second sample is an n-InAs/p-InAsSbP heterostructure with QDs embedded in the p-n junction interface. The morphology, size and shape of the structures are investigated by high-resolution scanning electron (SEM) and transmission electron (TEM) microscopy. It is shown that islands, as they decrease in size, undergo shape transitions. Particularly, as the volume decreases, the following succession of shape transitions are detected: sub-micrometric truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted "pre-pyramid", hemisphere, lens-shaped QD, which then evolves again to nano-pyramid. A critical size of $5{\pm}2nm$ for the shape transformation of InAsSbP-based lens-shaped QD to nano-pyramid is experimentally measured and theoretically evaluated.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Journal of the Korean Magnetic Resonance Society
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• v.23 no.2
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• pp.51-55
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• 2019

Quantum dot (QD) is an emerging novel nanomaterial that has wide applicability and superior functionality with relatively low cost. Nuclear magnetic resonance (NMR) spectroscopy has been contributed to elucidate various features of QDs and to improve their overall performance. In particular, NMR spectroscopy becomes an essential analytical tool to monitor and analyze organic ligands on the QD surface. In the present mini-review, application of NMR spectroscopy as a superb methodology to appreciate organic ligands is discussed. In addition, it was recently noted that ligands exert rather greater influence on diverse features of QDs than our initial anticipation, for which contribution of NMR spectroscopy is briefly reviewed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.737-749
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• 2016

Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic $CsPbX_3$(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.