• Applied Science and Convergence Technology
• /
• v.24 no.6
• /
• pp.254-256
• /
• 2015

Effect of growth temperature ($T_g$) on the structural and optical properties of $In_{0.5}Ga_{0.5}As$ atomic layer epitaxial (ALE) quantum dots (QDs) is investigated in the range of $T_g=480-510^{\circ}C$. $In_{0.5}Ga_{0.5}As$ ALE QDs consist of 5 periods of short-period superlattices (SPSs) of 1 monolayer-thick InAs and GaAs. Number of coalescent QDs decreases as $T_g$ increases, and they disappear at $T_g=510^{\circ}C$. As $T_g$ increases in the range of $480-495^{\circ}C$, sizes of QDs increase, and densities of QDs decrease due to merge of QDs. On the contrary, although sizes of QDs are maintained at $T_g=495-510^{\circ}C$, densities of QDs decrease. This is attributed to the desorption of material-mainly indium-during the growth interruption. This conjecture is supported by the optical properties of the QDs as a function of $T_g$. As a result, we propose that optimum growth temperature of the QD is $495^{\circ}C$ with less repetition of SPSs than 5.

• Applied Science and Convergence Technology
• /
• v.23 no.6
• /
• pp.387-391
• /
• 2014

Self-assembled InAlAs/AlGaAs quantum dots (QDs) on GaAs substrates were grown by using modified molecular epitaxy beam in Stranski-Krastanov method. In order to study the structural and optical properties of InAlAs/AlGaAs QDs, atomic force microscopy (AFM) and photoluminescence (PL) measurements are conducted. The size and uniformity of QDs have been observed from the AFM images. The average widths and heights of QDs are increased as the deposition time increases. The PL spectra of QDs are composed of two peaks. The PL spectra of QDs were analyzed by the excitation laser power- and temperature-dependent PL, in which two PL peaks are attributed to two predominant sizes of QDs.

• Applied Microscopy
• /
• v.36 no.spc1
• /
• pp.35-40
• /
• 2006

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.17 no.7
• /
• pp.390-395
• /
• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.541-541
• /
• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• Korean Journal of Materials Research
• /
• v.19 no.7
• /
• pp.356-361
• /
• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.663-668
• /
• 2003

CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The synthesized CdTe QDs were identified to be cubic-structured ones by x-ray diffraction(XRD). The photoluminescence(PL) was performed for CdTe QDs prepared as a function of Te precursor concentration, condensation time and aging time. The PL intensity is strongly dependent on Te precursor concentration, indicating that the ratio of Te to Cd ions affects the particle size and size distribution of the CdTe QDs. Our PL study reveals that the intensity of PL peaks strengthens as the condensation time elongates, implying that annealing by thermal energy transferred during condensation would eliminate defects which act as killing centers in CdTe particles. Our photocurrent study suggests that the CdTe QDs materials are one of the prospective materials for optoelectronics including photodetectors.

• Macromolecular Research
• /
• v.17 no.12
• /
• pp.995-1002
• /
• 2009

Luminescent polynorbornene (PNB)/quantum dot (CdSe@ZnS; QD) composite nanorods and nanotubes were successfully prepared using anodic aluminum oxide (AAO) membranes of various pore sizes as templates. To protect QDs with high quantum yield from quenching during the phosphoric acid treatment used to remove the AAO templates, chemically stable and optically clear norbornene-maleic anhydride copolymers (P(NB-r-MA)) were employed as a capping agent for QDs. The amine-terminated QDs reacted with maleic anhydride moieties in P(NB-r-MA) to form PNB-grafted QDs. The chemical- and photo-stability of QDs encapsulated with PNB copolymers were investigated by photoluminescence (PL) spectroscopy. By varying the pore size of the AAO templates from 40 to 380 urn, PNB/QD composite nanorods or nanotubes were obtained with a good dispersion of QDs in the PNB matrix.

• Journal of the Korean Vacuum Society
• /
• v.8 no.4A
• /
• pp.450-455
• /
• 1999

We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecualr Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value $(1.1\times10^{11}\textrm{/cm}^2)$ at 2.0 ML. In the spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20K~180K is narrowing with increasing temperature. When temperature is over 180K, the line-width starts to in creases with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.

• Journal of the Korean Ceramic Society
• /
• v.54 no.6
• /
• pp.449-469
• /
• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.