• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.442-448
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• 2011

Self-assembled InAs/InAlGaAs quantum dots (QDs) grown on an InP (001) substrate have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The single layer (QD1) and seven stacks (QD2) of InAs/InAlGaAs QDs grown by the conventional S-K growth mode were used. The PL peak at 10 K was 1,320 nm for both QD1 and QD2. As the temperature increases from 10 to 300 K, the PL peaks for QD1 and QD2 were red-shifted in the amount of 178 and 264 nm, respectively. For QD1, the PL decay increased with increasing emission wavelength from 1,216 to 1,320 nm, reaching a maximum decay time of 1.49 ns at 1,320 nm, and then decreased as the emission wavelength was increased further. However, the PL decay time for QD2 decreased continuously from 1.83 to 1.22 ns as the emission wavelength was increased from 1,130 to 1,600 nm, respectively. These PL and TRPL results for QD2 can be explained by the large variation in the QD size with stacking number caused by the phase separation of InAlGaAs.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.5-8
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• 2000

This paper shows the high performance as a photodetector of InGaP/GaAs HPT with 3-terminal caused by its inherent good electrical properties compared with AIGaAs/GaAs HPT. InGaP/GaAs HPT produced the high optical gain of about 61 where HPT is biased at Vc=3V, Iв=2${\mu}\textrm{A}$ with an input optical power of 1.23㎼. This is 2.5 times higher than that of AIGaAs/GaAs HPT. And we examined that the optical gain of HPTs becomes larger when operating in 3-terminal configuration rather than 2-terminal with the floating base. for a given base current of 2${\mu}\textrm{A}$, the optical gain is enhanced about 18% in the InGaP/GaAs HPT and about 27% in the AIGaAs/GaAs HPT over that of the 2-terminal device.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.209-215
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• 2006

We investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL), PL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra, we found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well, and correlated to the results of intersubband transitions observed in photocurrent spectrum.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.474-480
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• 2009

We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.165-165
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• 2010

$1.55\;{\mu}m$ 대역의 레이저 다이오드를 제작하기 위해, InP(001) 기판에 InAlGaAs 물질을 장벽층으로 하는 InAs 양자점 구조를 분자선증착기 (MBE)를 이용하여 성장하고 구조 및 광학적 특성을 Double Crystal X-ray Diffraction (DCXRD), Atomic Force Microscopy (AFM), Photoluminescence (PL)을 이용하여 평가하였다. 일반적으로 InAlGaAs 물질은 고유한 상분리 현상 (Phase Separation)이 나타나는 특성이 있으며, 이는 양자점 성장에 중요한 요인으로 작용할 수 있다. 이러한 InAlGaAs 물질의 상분리 현상을 기판온도 ($540^{\circ}C$, $555^{\circ}C$, $570^{\circ}C$)를 비롯한 성장변수를 변화시켜 제어하고 InAs 양자점 형성에 어떠한 영향을 미치는지를 분석하였다. 540의 성장온도에서 InP(001) 기판에 격자정합한 InAlGaAs 장벽층이 성장온도를 $570^{\circ}C$로 증가시킬 경우 기판에 대하여 인장 응력 (Tensile Strain)을 받는 구조로 변화되었다. 인장응력을 받는 InAlGaAs 장벽층을 Ga Flux 양을 조절하여 격자정합한 InAlGaAs 층을 형성할 수 있었다. AFM을 통한 표면 형상 분석 결과, 서로 다른 기판온도에서 성장한 InAlGaAs 물질이 InP(001) 기판에 격자정합 조건일지라도 표면의 거칠기 (Surface Roughness)는 매우 다른 양상을 보였고 InAs 양자점 형성에 직접적으로 영향을 주었다. $570^{\circ}C$에서 성장한 InAlGaAs 위에 형성한 InAs 양자점의 가로방향 크기를 세로방향 크기로 나눈 비율이 1.03으로서, 555와 $540^{\circ}C$의 1.375 와 1.636와 비교할 때 모양 대칭성이 현저히 개선된 것을 알 수 있다. 상분리 현상이 줄어 표면 거칠기가 좋은 InAlGaAs 위에 양자점을 형성할 때 원자들의 이동도가 상대적으로 높아 InAs 양자점의 크기가 증가하고, 밀도가 감소하는 현상이 나타났다. 또한 InAlGaAs 장벽층이 InP(001) 기판을 기준으로 응력 (Compressive 또는 Tensile)이 존재하는 경우, InAs 양자점 모양이 격자정합 조건 보다 비대칭적으로 변하는 특성을 보여 주었다. 이로부터, 대칭성이 개선된 InAs 양자점 형성에 InAlGaAs 장벽층의 표면 거칠기와 응력이 중요한 변수로 작용함을 확인 할 수 있었다. PL 측정 결과, 발광파장은 $1.61\;{\mu}m$로 InAs 양자구조 형상에 따라 광강도 (Intensity), 반치폭 (Line-width broadening) 등이 변화 되었다.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.461-467
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• 2011

The valence band maximum and the conduction band miminum of GaAs, GaSb, InAs, and InSb (constituent binaries of the quaternaty alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$) are calculated by using TB analytical approach method. The band alignment types of their heterojunctions are determined directly from their relative position of band edges (VBM and CBM). For example, the GaAs/InAs, GaAs/InSb, and GaSb/InSb are in a type-I, the GaAs/GaSb in a type-II, and the GaSb/InAs and InSb/InAs in a type-III, respectively. The composition dependent VBM and CBM for the $Ga_xIn_{1-x}Sb_yAs_{1-y}$ alloy are obtained by using the univeral tight binding method. For the alloyed heterojunctions, the band alignments can be controlled by changing the composition which induce a band type transition. For the alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$ lattice mathced to GaSb, the type-II band alignment in the region of $x{\leq}0.15$ is changed to the type-III in the region of $x{\geq}0.81$. On the other hand, the alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$ lattice mathced to InAs has the type-II band alignment in the region of $x{\leq}0.15$ and the type-III band alignment in the region of $x{\geq}0.81$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.423-427
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• 1998

In this paper the electron mobility in $Ga{1-X}In_xAs$alloy semiconductors is simulated by using the ensemble Monte Carlo method. The simulations for Ga\ulcornerIn\ulcornerAs with In mole fraction, doping concentration and temperature as parameters are performed. The electron mobility for alloys which perfectly orderd alloys without the alloy scattering mechanism are assumed, the results show that mobility in Ga\ulcornerIn\ulcornerAs is improved by 11%, 12% and 7% for 0.25, 0.53 and 0.75. In mole fractions, respectively, We reported the theoretical results of electron mobility in $Ga{1-X}In_xAs$alloys, so those will contribute to the research and development into materials for high-speed semiconductor devices.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.374-379
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• 2001

We have investigated the annealing effects on the optical properties of InAs quantum dots(QDs) capped with InGaAs(sample QDl), where InGaAs layer was deposited by opening Gallium, Arsenic, Indium and Arsenic shutters alternately with 3 periods, grown by molecular beam epitaxy. The emission wavelength of the sample of InAs QDs capped by GaAs barriers was observed to be blue-shifted as the annealing temperature was increased. On the other hand, the photoluminescence(PL) peak position of sample QD1 was observed to be red-shifted at the annealing temperature of up to $600^{\circ}C$ and, then, it was found to be blue-shifted at temperatures ranging from 700 to $800^{\circ}C$. The full width at half maximum values of sample QD1 subjected to annealing treatments show different behavior compared to typical InAs quantum dot structures.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.208-212
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• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Microbiology and Biotechnology Letters
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• v.51 no.1
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• pp.1-9
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• 2023

Arsenic (As), which is ubiquitous throughout the environment, represents a major environmental threat at higher concentration and poses a global public health concern in certain geographic areas. Most of the conventional arsenic remediation techniques that are currently in use have certain limitations. This situation necessitates a potential remediation strategy, and in this regard bioremediation technology is increasingly important. Being the oldest representativse of life on Earth, microbes have developed various strategies to cope with hostile environments containing different toxic metals or metalloids including As. Such conditions prompted the evolution of numerous genetic systems that have enabled many microbes to utilize this metalloid in their metabolic activities. Therefore, within a certain scope bacterial isolates could be helpful for sustainable management of As-contamination. Research interest in microbial As(III) oxidation has increased recently, as oxidation of As(III) to less hazardous As(V) is viewed as a strategy to ameliorate its adverse impact. In this review, the novelty of As(III) oxidation is highlighted and the implication of As(III)-oxidizing microbes in environmental management and their prospects are also discussed. Moreover, future exploitation of As(III)-oxidizing bacteria, as potential plant growth-promoting bacteria, may add agronomic importance to their widespread utilization in managing soil quality and yield output of major field crops, in addition to reducing As accumulation and toxicity in crops.