• Journal of the Semiconductor & Display Technology
• /
• v.3 no.3
• /
• pp.31-35
• /
• 2004

A blue light emitting diode with 8 periods InGaN/GaN multi-quantum well structure grown by metal-organic chemical vapor deposition was fabricated with the inclusion of the metal-interconnection process in order to integrate the chips for light lamp. The quantum well structure provides the blue light photoluminescence peaked at 479.2 nm at room temperature. As decreasing the temperature to 20 K, the main peak was shifted to 469.7 nm and a minor peak at 441.9 nm appeared indicating the quantum dot formation in quantum wells. The current-voltage measurement for the fabricated LED chips shows that the metal-interconnection provides good current path with ohmic resistance of 41 $\Omega$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.47-47
• /
• 2011

There have been numerous efforts to enhance the efficiency of light-emitting diodes (LEDs) by using low dimensional structures such as quantum dots (QDs), wire (QWRs), and wells (QWs). We demonstrate QD/QWR/QW hybrid structured LEDs by using nano-scaled pyramid structures of GaN with ~260 nm height. Photoluminescence (PL) showed three multi-peak spectra centered at around 535 nm, 600 nm, 665 nm for QWs, QWRs, and QDs, respectively. The QD emission survived at room temperature due to carrier localization, whereas the QW emission diminished from 10 K to 300 K. We confirmed that hybrid LEDs had zero-, one-, and two-dimensional behavior from a temperature-dependent time-resolved PL study. The radiative lifetime of the QDs was nearly constant over the temperature, while that of the QWs increased with increasing temperature, due to low dimensional behavior. Cathodoluminescence revealed spatial distributions of InGaN QDs, QWRs, and QWs on the vertices, edges, and sidewalls, respectively. We investigated the blue-shifted electroluminescence with increasing current due to the band-filling effect. The hybrid LEDs provided broad-band spectra with high internal quantum efficiency, and color-tunability for visible light-emitting sources.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.146-147
• /
• 2012

InP 기판위에 자발성장법으로 성장된 InAs 양자점은 $1.55{\mu}m$ 영역에서 발진하는 양자점 반도체 레이저 다이오드 및 광 증폭기를 제작할 수 있기 때문에 많은 관심을 받고 있다. 광통신 대역의 $1.55{\mu}m$ 반도체 레이저 다이오드 및 광 증폭기 분야에서 InAs/InP 양자점이 많은 관심을 받고 있으나, InAs/GaAs 양자점에 비해 제작이 어려운 단점을 가지고 있다. InAs/InP 양자점은 InAs/GaAs 양자점에 비해 격자 불일치가 작아 양자점의 크기가 크고 특히 As 계 박막과 P 계박막의 계면에서 V 족 원소 교환 반응으로 계면 특성 저하가 발생하여 성장이 까다롭다. As 과 P 간의 교환반응은 성장온도와 V/III 에 의해 크게 영향을 받는 것으로 보고되었다. 그러나, P계 InGaAsP 박막 위에 InAs 성장 시 발생하는 As/P 교환반응에 대한 연구는 매우 적다. 본 연구에서는 InGaAsP 박막 위에 InAs 양자점 성장 시 GI (growth interruption)에 의한 As/P 교환반응이 InAs 양자점의 형상 및 광학적 특성에 미치는 영향을 연구하였다. 시료는 수직형 저압 Metal Organic Chemical Vapor Deposition (MOCVD)를 이용하여 $520^{\circ}C$의 온도에서 성장하였다. 그림1(a) 구조의 양자점은 InP (100) 기판위에 InP buffer layer를 성장한 후 InP와 격자상수가 일치하는 $1.1{\mu}m$ 파장의 InGaAsP barrier를 50 nm 성장하였다. 그 후 As 분위기 하에서 다양한 GI 시간을 주었고 그 위에 InAs 양자점을 성장하였다. 양자점 성장 후 InGaAsP barrier를 50 nm, InP capping layer를 50 nm 성장하였다. AFM측정을 위해 InP capping layer 위에 동일한 GI 조건의 InAs/InGaAsP 양자점을 성장하였고 양자점 성장 후 As분위기 하에 온도를 내려주었다. 그림1(b) 구조의 양자점은 그림1(a) 와 모든 조건은 동일하나 InAs 양자점과 InGaAsP barrier 사이에 GaAs 2ML를 삽입한 구조이다. 양자점 형상 특성 평가는 Atomic force microscopy를 이용하였으며, 광특성 분석은 Photoluminescence를 이용하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.319.1-319.1
• /
• 2014

We present the results on the indium tin oxide (ITO) Schottky barrier solar cells (SBSCs) with InAs quantum dots (QDs). The dependence of external quantum efficiency on the external bias voltage has been studied to anlayze carrier extraction through tunneling at room temperature.

• Journal of the Korean Vacuum Society
• /
• v.15 no.2
• /
• pp.194-200
• /
• 2006

Self-assembled InAs/InAl(Ga)As quantum dots (QDs) were grown on InP substrates by a molecular-beam epiaxy, and their structural and optical properties were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and room-temperature photoluminescence (PL). AFM images indicated that the InAs quantum structures showed various shapes such as quantum dashes, asymmetric and symmetric QDs mainly caused by the initial surface conditions of InAl(Ga)As with the intrinsic phase separation. For the buried InAs QDs in an InAlGaAs matrix, the average lateral size and height of QDs were 23 and 2 nm, respectively. By changing the growth conditions for the QD samples, the emission wavelength of $1.55{\mu}m$ was obtained, which is one of the wavelength windows for fiber optic communications.

• Korean Journal of Materials Research
• /
• v.19 no.7
• /
• pp.356-361
• /
• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• Journal of the Korean Vacuum Society
• /
• v.15 no.2
• /
• pp.201-208
• /
• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.1
• /
• pp.30-34
• /
• 2005

This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.

• Journal of the Korean Vacuum Society
• /
• v.15 no.5
• /
• pp.493-498
• /
• 2006

Superluminescent diodes (SLD) with the emitting wavelength of $1.55{\mu}m$ was fabricated on InGaAs quantum dot structure grown by MOCVD. The output power and 3-dB bandwidth at room temperature and continuous wave operation were 3 mw and 55 nm, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.3
• /
• pp.131-135
• /
• 2006

High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000 $cm^2/V-s$ and 20,000 $cm^2/v-s$ can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.