• 한국진공학회지
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• 제18권4호
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• pp.288-295
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• 2009

본 논문은 확산펌프 기반의 축전 결합형 $BCl_3$ 플라즈마를 사용하여 GaAs와 AlGaAs를 건식 식각한 연구에 관한 것이다. 실험에서 사용한 압력 범위는 $50{\sim}180$ mTorr, CCP 파워는 $50{\sim}200\;W$, $BCl_3$ 가스 유량은 $2.5{\sim}10$ sccm 이었다. 식각 후에 GaAs와 AlGaAs의 식각 속도와 표면 거칠기분석은 표면 단차 측정기를 이용하여 하였다. GaAs의 식각 벽면과 표면 상태는 전자현미경으로 분석하였다. 식각 중 플라즈마의 광 특성 분석은 광학 발광 분석기를 이용하였다. 본 실험을 통하여 5 sccm의 소량의 $BCl_3$ 가스 유량으로 공정 압력이 130 mTorr이내인 경우에는, 100 W CCP 파워의 조건에서 GaAs는 약 $0.25{\mu}m$/min 이상의 우수한 식각 속도를 얻을 수 있었다. AlGaAs의 경우는 GaAs의 식각 속도보다 조금 낮았다. 그러나 같은 유량에서 공정압력이 180 mTorr로 높아지면 GaAs와 AlGaAs의 식각 속도가 급격히 감소하여 거의 식각되지 않는 것을 알 수 있었다. 또한 CCP 파워의 경우에는 50 W의 파워에서는 GaAs와 AlGaAs 모두 거의 식각되지 않았다. 그러나 $100{\sim}200\;W$의 조건에서는 $0.3{\mu}m$/min 이상의 높은 식각 속도를 주었다. 두 결과를 보았을 때 축전결합형 $BCl_3$ 플라즈마 식각에서 GaAs와 AlGaAs의 식각 속도는 CCP 파워가 $100{\sim}200\;W$ 범위에 있으면 그 값에 비례하지 않고 거의 일정한 값이 된다는 사실을 알았다. 75mTorr, 100 W의 CCP 파워 조건에서 $BCl_3$의 유량 변화에 따른 GaAs와 AlGaAs의 식각 속도의 경우, $BCl_3$의 유량이 2.5 sccm의 소량일 때는 GaAs는 식각 속도가 높았지만 AlGaAs는 거의 식각되지 않는 흥미로운 결과를 얻었다. 플라즈마 발광 특성을 보면 $BCl_3$ 축전 결합 플라즈마는 주로 $500{\sim}700\;mm$ 범위를 가지는 넓은 분자 피크만 만든다는 것을 알 수 있었다. 전자 현미경 사진 결과에서는 5 sccm과 10 sccm의 $BCl_3$ 플라즈마 모두 식각 중에 GaAs의 벽면을 언더컷팅 하였으며, 10 sccm의 $BCl_3$유량을 사용하였을 때 언더컷팅이 더 심했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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• pp.14-16
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• 2008

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photocurrent is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO was used as an anode, and Al and LiAl were used as a cathode. A layer thickness of Al and LiAl were 100nm. Obtained built-in voltage is about 1.0V in the Al layer was used as a cathode. The obatined built-in voltage is about 1.6V in the LiAl layer was used as a cathode. The result of built-in voltage is dependent of cathode. We can see that the built-in voltage increase up to 0.4V when the LiAl layer was used as the cathode. These results correspond to the work function of LiAl which is lower than that of Al. As a result, the barrier height for an electron injection from the cathode to the organic layer could be lowered when the LiAl was used as a cathode.

• 한국진공학회지
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• 제15권3호
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• pp.294-300
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• 2006

금속유기화학증착기 (metal-organic chemical vapor deposition)를 이용하여 분포귀환형 (distributed feed back) InP/InGaAs/InP 회절격자 구조를 제작하고 원자력간현미경 (atomic force microscopy)과 주사전자현미경 (scanning electron microscopy) 실험을 통해 표면 및 단면을 분석하였다. 그 위에 분자선증착기(molecular beam epitaxy)법을 이용하여 자발형성 (self-assembled) InAs/InAlGaAs 양자점 (quantum dot)을 성장하고, 광학적 특성을 온도변화 광여기 발광 (photoluminescence)으로 회절격자 구조 없이 성장한 양자점 시료와 비교 분석하였다. 회절격자의 간격 대비 폭의 비가 약 30%인 InP/InGaAs/InP 회절격자가 제작되었으며, 그 위에 성장된 양자점의 경우 상온 파장이 1605 nm에서 PL이 관찰되었다. 이는 회절격자 없이 같은 조건에서 성장된 시료의 상온 파장인 1587 nm 보다 장파장에서 발광하였으며, 회절격자의 영향으로 양자점 크기가 변하였음을 조사하였다.

• 한국재료학회지
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• 제9권5호
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

• 한국진공학회지
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• 제2권1호
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• pp.34-40
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• 1993

새로운 단결정 박막 성장방법으로 최근에 많은 관심을 끌고 있는 초고진공 화학기상증착법(Ultra-High Vacuum Chemical Vapor Deposition)을 이용하여 AlGaAs에 에피탁시 박막을 성장시켰다. AlGaAs 에피탁시층의 성장은 2。 경사진 GaAs(100) 기판을 사용하였다. 반응 기체로는 Trimethylgallium(TMGa), Trimethylaluminum(TMAl)과 arsine을 사용하였고, 성장온도는 $580~700^{\circ}C$, 기체 압력은 10-5~10-4Torr를 유지하였다. 특히 본 연구에서는 arsine을 사전에 열분해 하는 통상의 Chemical Beam Epitaxy(CBE) 성장법과는 달리, arsine이 표면에서 분해되는 화학 반응만을 사용하여도 AlGaAs 에피탁시를 성장할 수 있음은 물론 박막내의 탄소 불순물의 농도가 크게 낮아짐을 관찰하였다. 또한 성장 온도의 변화에 따른 AlGaAs 에피탁시층의 Al 함유 과정에 대하여도 고찰하였다.

• 한국환경농학회지
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• 제30권3호
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• pp.229-233
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• 2011

BACKGROUND: Soil acidification, which is known to be one of the reasons of forest decline, is associated with decreases in exchangeable Ca and increases in Al concentration, leading to low Ca/Al ratio in soil solution. As tree rings are datable archives of environmental changes, Ca/Al ratios of annual growth ring may show decreasing pattern in accordance with the progress of soil acidification. This study was conducted to investigate Ca/Al pattern of Pinus densiflora tree ring in an attempt to test its usefulness as an indicator of historical soil acidification. METHODS AND RESULTS: Three P. densiflora tree disks were collected from P. densiflora forests in Jeonnam province, and soil samples (0-10, 10-20, and 20-30 cm in depth) were also collected from the tree locations. Soils were analyzed for pH and exchangeable Ca and Al concentrations, and Ca/Al was calculated. Annual growth rings formed between 1969 and 2007 were separated and analyzed for Ca/Al. Soil Ca/Al was positively (P<0.01) correlated with soil pH, suggesting that soil acidification decreased Ca while increasing Al availability, lowering Ca/Al in soil solution. The Ca/Al of tree rings also showed a decreasing pattern from 18.2 to 5.5 during the period, and this seemed to reflect historical acidification of the soils. CONCLUSION(s): The relationship between soil pH and Ca/Al and the decreasing pattern of Ca/Al of tree ring suggest that Ca/Al of tree ring needs to be considered as a proxy of the progress of soil acidification in P. densiflora forest in southern Korea.

• 한국주조공학회지
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• 제10권5호
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• pp.417-425
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• 1990

The purpose of this study is to investigate the effect of Be addition on the microstructure and mechanical properties of as-cast and homogenization treated Al-Li-(Be)alloys. The ductility of as-cast Al-Li alloy was increased by the addition of Be and the fracture morphology was changed from brittle to ductile mode. Also, hardness and strength have been decreased by homogenization treatment. The morphology of eutectic structure which consists of ${\alpha}(Al)$ and ${\alpha}(Be)$ was changed from lammellae to spherical type by homogenization treatment. The shape of ${\alpha}(Be)$ phase has been revealed as hollow type by TEM observation. It consists of outer surfaces with well defined crystal facets and the core filled with ${\alpha}(Al)$. The microstructure of as-cast Al-Li-Be alloys showed coarse ${\delta}'$, fine ${\delta}'$, and coarse ${\delta}$ phases. The coarse and fine ${\delta}'$ phases were formed at Be-rich phase /matrix interfaces and in matrix, respectively. By homogenization treatment, the ${\delta}$ phase in Al-Li and Al-Li-Be alloys dissolved and the size of ${\delta}$ phase in Al-Li-Be alloys was finer than that of Al-Li alloy.

• 대한환경공학회지
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• 제35권7호
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• pp.495-502
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• 2013

본 연구는 UF공정의 전처리로써 Al(III)계 응집제인 alum과 PACl을 사용한 응집공정 적용 시 두 응집제의 효율 비교 및 잔류 알루미늄 농도를 고려한 최적 운전 조건을 알아보기 위해 응집제 주입농도, 완속교반의 적용 그리고 해수 원수의 pH를 변화하여 UF막 flux 및 잔류 알루미늄 이온 농도를 조사했다. 그 결과 pH 8.0 조건에서 alum의 주입농도가 증가할수록 flux 또한 증가하였으며 완속교반은 UF막 flux를 오히려 감소시킨 것으로 조사된 반면 PACl의 경우 주입농도가 증가할수록 flux는 일부 감소하는 경향을 보였으며 alum과는 반대로 완속교반 적용시 flux 또한 증가하였다. 반면에 pH 6.5 조건에서 alum 주입량이 0.7 mg/L (as Al)일 때 UF막 flux의 효율이 가장 좋았고 잔류 알루미늄 농도는 0.05 mg/L (as Al) 이하로 측정되었다. PACl의 경우 UF막 flux 측면에서는 최적 조건은 pH 8.0, 주입농도 1.2 mg/L (as Al) 그리고 완속교반 시간을 적용하였을 때였으며 잔류 알루미늄 농도를 고려한 최적 주입조건은 pH 6.5 조건에서 주입농도를 1.2 mg/L (as Al)일 때로 조사되었다.

• 대한물리의학회지
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• 제9권4호
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• pp.433-438
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• 2014

PURPOSE: The purpose of our study was to compare a 975-nm, 500-mW GaAlAs low-level laser therapy versus placebo low-level laser therapy with regard to the immediate changes on the myofascial trigger point of the dominant upper trapezius muscle in subjects with rounded shoulder posture. METHODS: Thirty-two male college students with rounded shoulder posture and shoulder pain consented to participate in the experiment. The subjects were randomly assigned to a 2-minute procedure with either an active GaAlAs low-level laser or a placebo GaAlAs low-level laser. The pressure-pain threshold and visual analog scale on tenderness at 3 kg were measured with an algometer before and after the laser treatments. RESULTS: The active GaAlAs low-level laser group showed significant changes in pressure-pain threshold and visual analog scale on tenderness at 3 kg (p<0.05). The placebo GaAlAs low-level laser group showed no significant changes in either pressure-pain threshold or visual analog scale on tenderness at 3 kg (p>0.05). CONCLUSION: An immediate effect was observed in pressure-pain threshold and visual analog scale on tenderness at 3 kg following a 2-minute application ($857.14J/cm^2$) of a 975-nm, 500-mW GaAlAs low-level laser to the myofascial trigger point of the dominant upper trapezius muscle in patients with rounded shoulder posture.