• Title/Summary/Keyword: InAlP

Search Result 3,427, Processing Time 0.029 seconds

First-principles Study on the Half-metallicity and Magnetism of the (001) Surfaces of (AlP)1/(CrP)1 Superlattice ((AlP)1/(CrP)1 초격자계에서 (001) 표면의 자성과 반쪽금속성에 대한 제일원리 연구)

  • Bialek, Beata;Lee, Jae Il
    • Journal of the Korean Magnetics Society
    • /
    • v.25 no.6
    • /
    • pp.175-179
    • /
    • 2015
  • The half-metallicity and magnetism of the (001) surfaces of $(AlP)_1/(CrP)_1$ superlattice were investigated by means of FLAPW (Full-potential Liniarized Augmented Plane Wave) method. We considered four types of (001) surface termination, i.e., Al(S)-, Cr(S)-, P(S)Al(S-1)- and P(S)Cr(S-1)-term systems. We found that only Cr(S)-term system maintains the half-metallicity at the surface as only this system has the calculated magnetic moment of integer number of bohr magnetons. The magnetic moment of Cr(S) atom in the system was $3.02{\mu}_B$ which was increased from the bulk value by the effects of band narrowing and increased spin-splitting at the surface. The electronic density of states of the P(S) atom in the P(S)Al(S-1)-term showed very sharp surface states due to the broken $p_z$ bonds at the surface. We found there is still a strong p-d hybridization between the P(S) and Cr(S-1) layers in the P(S)Cr(S-1)-term which causes a considerable increase of magnetic moment of P(S) atom.

Formation of Beta-Alumina from Metalkoxide (금속알콕시이드로부터 $\beta$-Alumina의 생성)

  • 공용식;문종수;이서우
    • Journal of the Korean Ceramic Society
    • /
    • v.25 no.2
    • /
    • pp.136-142
    • /
    • 1988
  • β-Al2O3, which is used for solid electrolyte membrances in sodium-sulfur batteries, was prepared by sol-gel process. Sodium-n-propoxide NaOC3H7 and aluminum-isopropoxide Al(OC3H7)3 were hydrolyzated in the solution at pH 3, pH 7, pH 9 and pH 11, respectively. The sol-gel processed samples were calcined at several temperature steps, respectively and analysed by thermal analyser(DT-TGA), infrared spectrum analyser and X-ray diffraction analyser. The gelling rate of solution at pH 7 was much higher than that of the solution at pH 3. Thermal exchanging behavior of the gels at pH 3 were similar to Na2O·Al2O3·6H2O and, above pH 7, were similar to Na2O·Al2O3·3H2O. When samples' composition ratio was 9.13 : 90.87 [NaOC3H7:Al(OC3H7)3] at pH 7, β-Al2O3 was formed at 1100℃.

  • PDF

Microstructure and Mechanical Properties of P/M Processed 2XXX Al-${SiC}_{p}$ Composites (분말야금방법으로 제조된 2XXX Al-${SiC}_{p}$ 복합재료의 미세조직과 기계적 성질)

  • 심기삼
    • Journal of Powder Materials
    • /
    • v.4 no.1
    • /
    • pp.26-41
    • /
    • 1997
  • The powder metallurgy (P/M) processed 2009 and 2124 Al composites reinforced with SiC particulates were studied by focusing on the effect of consolidation temperature on the microstructural and mechanical Properties. The mechanical properties such as tensile properties and microhardness of the second phases were analysed in relation to the microstructures observed by a SEM and an optical microscope. The in situ fracture process study using SEM showed that the grain refinement and the removal of manganese-containing particles often observed in the 2124 Al-${SiC}_{p}$ composites were important for the improvement of the mechanical properties. This study offers an optimum consolidation temperature for the control of the manganese-containing particles in the 2124 Al-${SiC}_{p}$ composites that yields mechanical properties higher than those of the 2009 Al-${SiC}_{p}$ composites.

  • PDF

A Comparative Study on Tribological Characteristics between Ni-P Electroless Plating and TiAlN Coating on Anodized Aluminum Alloy (아노다이징된 알루미늄 합금에 대한 TiAlN 코팅, 무전해 Ni-P 도금의 트라이볼로지 특성 비교)

  • Lee, Gyu-Sun;Bae, Sung-Hoon;Lee, Young-Ze
    • Tribology and Lubricants
    • /
    • v.26 no.1
    • /
    • pp.68-72
    • /
    • 2010
  • A ceramic coating is a surface treatment method that is being used widely in the industrial field, recently. Ni-P plating is also being used widely because of its corrosion resistance and low cost. An anodizing method is applicable to aluminum alloy. An anodizing method generates a thick oxide layer on the surface and then, that heightens hardness and protects the surface. These surface treatments are applied to various mechanical components and treated surfaces relatively move one another. In this study, tribological characteristics of Ni-P plating and TiAlN coating on anodized Al alloy are compared. The counterpart, anodized Al alloy, is worn out abrasively by Ni-P plating and TiAlN coating that have higher hardness. Abrasively worn debris accumulated on the surfaces of Ni-P plating and TiAlN coating, and then transferred layer is formed. This transferred layer affects the amplitude of variation of friction coefficient, which is related to noise and vibration. The amplitude of variation of friction coefficient of Ni-P plating is lower than those of TiAlN coating during the tests.

Contactless Electroreflectance Spectroscopy of In0.5(Ga1-xAlx)0.5P/GaAs Double Heterostructures (In0.5(Ga1-xAlx)0.5P/GaAs 이중 이종접합 구조의 Contactless Electroreflectance에 관한 연구)

  • Kim, Jeong-Hwa;Jo, Hyun-Jun;Bae, In-Ho
    • Journal of the Korean Vacuum Society
    • /
    • v.19 no.2
    • /
    • pp.134-140
    • /
    • 2010
  • We have investigated the contactless electroreflectance (CER) properties of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$/GaAs double heterostructures grown by metal-organic chemical vapour deposition (MOCVD). The CER measurements on the sample were studied as a function of temperature, modulation voltage ($V_{ac}$), and dc bias voltage ($V_{bias}$). Five signals observed at room temperature are related to the GaAs, $In_{0.5}Ga_{0.5}P$, $In_{0.5}(Ga_{0.73}Al_{0.27})_{0.5}P$, $In_{0.5}(Ga_{0.5}Al_{0.5})_{0.5}P$, and $In_{0.5}(Ga_{0.2}Al_{0.8})_{0.5}P$ transitions, respectively. From the temperature dependence of CER spectrum, the Varshni coefficients and broadening parameters were determined and discussed. In addition, we found that the behavior of the CER amplitude for the reverse bias is larger than that of the forward.

Influence of Solidification Condition on the Segregation of SiC Particles in the Al-Si/$SiC_p$ Composites (Al-Si/$SiC_p$ 복합재료에서 SiC의 편석에 미치는 응고 조건의 영향)

  • Kim, Jong-Chan;Kwon, Hyuk-Moo
    • Journal of Korea Foundry Society
    • /
    • v.17 no.2
    • /
    • pp.180-187
    • /
    • 1997
  • The influence of solidification condition on the segregation of SiC particles in the $Al-xSi/6wt%SiC_p$(x: 6, 10, 14, 18${\cdot}$wt%) composites was investigated in the study. The results are as follows: 1) During the counter-gravity unidirectional solidification of $Al-Si/SiC_p$ composites melt, most of the SiC particles are pushed to the top of the casting. 2) The SiC particles pushing in the $Al-Si/SiC_p$ composite melts are not observed, when the interface velocity of melts increases more than 1.41 ${\mu}m/sec$. 3) The SiC particles are entrapped in the interdendrite regions, when the sizes of SiC particles in the $Al-Si/SiC_p$ composites are large than ${\varphi}22{\mu}m$.

  • PDF

Analysis of the Abnormal Voltage-Current Behaviors on Localized Carriers of InGaN/GaN Multiple Quantum well from Electron Blocking Layer

  • Nam, Giwoong;Kim, Byunggu;Park, Youngbin;Kim, Soaram;Kim, Jin Soo;Son, Jeong-Sik;Leem, Jae-Young
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.219-219
    • /
    • 2013
  • The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

  • PDF

Enzymological Properties of the Alkaline AL-Protease from Arthrobacter luteus and Detection of Its Active Amino Acid Residue (Arthrobacter luteus로부터 유래한 염기성 AL-Protease의 효소학적 성질 및 활성 아미노산 잔기의 검색)

  • Oh, Hong-Rock;Aizono, Yasuo;Funatsu, Masaru
    • Journal of the Korean Society of Food Science and Nutrition
    • /
    • v.13 no.2
    • /
    • pp.193-204
    • /
    • 1984
  • The enzymatic properties of the alkaline AL-protease, which had been prepared from the crude zymolyase of Arthrobzoter luteus, was investigated together with its active amino acid residue. Complete inactivaton of the proteolytic activity of AL-protease by either DFP or PMSF was simultaneously accompanied by the loss of its lytic effect on the lysis of yeast cell wall. In the reaction, AL-protease showed the pattern of inactivation to decrease very slowly, as compared to that of chymotrypsin, and that enzyme and DFP were found to react with a molar ratio of 1 : 1. The preparation of AL-protease exhibited no hydrolytic activity in any substrates of polysaccharases, playing a significant role in the lysis of yeast cell wall. The optimum pH and temperature of AL-protease was pH 10.5 and $65^{\circ}C$, respectively. It also showed stability in the pH range from 5 to 11 and at the temperature below $65^{\circ}C$. Through the identification of the amino acid residue in the active site of the $^{32}P$-diisopropylph-osphorylated(DIP) AL-protease modified specifically with $^{32}P$-labeled DFP, AL-protease was found to be a DFP-sensitive which has a mole of active serine residue involved in its proteolytic activity per mole of the enzyme.

  • PDF

Effect of Ethanol as a Dispersant and pH on the Particle Size and Phase Formation in the Synthesis of K+-β"-Al2O3 by Solution State Reaction (액상반응에 의한 K+-β"-Al2O3 합성시 분산첨가제 에탄올과 pH가 입도 및 상형성에 미치는 영향)

  • Cho, Do-Hyung;Kim, Woo-Sung;Shin, Jae-Ho;Lim, Sung-Ki
    • Applied Chemistry for Engineering
    • /
    • v.16 no.1
    • /
    • pp.45-51
    • /
    • 2005
  • $K^+-{\beta}^{{\prime}{\prime}}-Al_2O_3$ in the $K_2O-Li_2O-Al_2O_3$ ternary system was synthesized using aluminum nitrate solution as a starting material. For the synthesis of pure $K^+-{\beta}^{{\prime}{\prime}}-Al_2O_3$, raw materials with chemical composition of $0.84K_2O{\cdot}0.082Li_2O{\cdot}5.2Al_2O_3$ were mixed in solution state. The effects of dispersant and solution-pH were investigated in minimizing the particle size and on the synthesis of pure $K^+-{\beta}^{{\prime}{\prime}}-Al_2O_3$. Ethanol was used for a dispersant, and $NH_4OH$ solution and nitric acid were added for pH adjustment. The solution pH was increased from 1.0 to 7.5 by 0.5 increments. Each sample was calcined at $1200^{\circ}C$ for 2 h and characterized with X-ray diffraction and particle size analyzer. The pH of solution significantly effected both particle size and phase formation, while the addition of ethanol only effected particle size. The synthesis of pure $K^+-{\beta}^{{\prime}{\prime}}-Al_2O_3$ was favored by addition of nitric acid (for pH control).

Analysis on Bowing and Formation of Al Doped P+ Layer by Changes of Thickness of N-type Wafer and Amount of Al Paste (N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석)

  • Park, Tae Jun;Byun, Jong Min;Kim, Young Do
    • Korean Journal of Materials Research
    • /
    • v.25 no.1
    • /
    • pp.16-20
    • /
    • 2015
  • In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.