• 제목/요약/키워드: InAlGaN

검색결과 392건 처리시간 0.023초

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

  • Lee, Jung-Yeon;Park, Bong-Ryeol;Lee, Jae-Gil;Lim, Jongtae;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권1호
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    • pp.16-21
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    • 2015
  • In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

Noise Analysis of Sub Quarter Micrometer AlGaN/GaN Microwave Power HEMT

  • Tyagi, Rajesh K.;Ahlawat, Anil;Pandey, Manoj;Pandey, Sujata
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권3호
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    • pp.125-135
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    • 2009
  • An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of two-dimensional Poisson's equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.

SMD 타입 태양전지 어레이를 이용한 white GaN LED용 전원 공급 장치 (Power Supply for White GaN LED by Using SMD Type Solar Cell Array)

  • 김성일;이윤표
    • 신재생에너지
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    • 제5권4호
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    • pp.34-37
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    • 2009
  • Using six SMD(surface mount device) type AlGaAs/GaAs single junction solar cells connected in series, a power source was fabricated for a white GaN LED. The electrical properties of the power source was measured and analyzed under one sun (100mW/$cm^2$) and various indoor light (300 - 900 lux) conditions. Under 600 lux indoor light condition, output power was 17.06 ${\mu}W$ and it was 30.75 ${\mu}W$ under 900 lux indoor light condition. Using the fabricated solar cell power supply, we have turned on the white GaN LED. It was worked well under 15 ${\mu}W$(at 480 lux) power supplied from solar cell array. This kind of solar cell power supply can be used as a power source for ubiquitous sensor network (USN).

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Si(111) 위에 Ion beam 처리 후 AlN layer를 완충층으로 이용하여 성장시킨 GaN의 특성 (The characteristics of AlN buffered GaN on ion beam modified Si(111) substrates)

  • 강민구;진정근;이재석;오승석;현진;변동진
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.99-99
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    • 2003
  • The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

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Surface Analysis of Plasma Pretreated Sapphire Substrate for Aluminum Nitride Buffer Layer

  • Jeong, Woo Seop;Kim, Dae-Sik;Cho, Seung Hee;Kim, Chul;Jhin, Junggeun;Byun, Dongjin
    • 한국재료학회지
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    • 제27권12호
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    • pp.699-704
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    • 2017
  • Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

이온주입된 Si(111)에 AlN 완충층을 이용하여 성장시킨 GaN 박막의 특성 (The characteristics of AlN buffered GaN on ion implanted Si(111))

  • 강민구;진정근;이재석;노대호;양재웅;변동진
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.165-165
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    • 2003
  • The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

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Photo reflectance Measurement in Si$_{3}$N$_{4}$/ Al$_{0.21}$Ga$_{0.79}$ As/GaAs Heterostructure

  • Yu Jae-In;Park Hun-Bo;Choi Sang-Su;Kim Ki-Hong;Baet In-Ho
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권2호
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    • pp.54-57
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    • 2005
  • Photoreflectance (PR) has been measured to investigate the characterization of the Si$_{3}$N$_{4}$Al$_{0.21}$ Ga$_{0.79}$As/GaAs and Al$_{0.21}$Ga$_{0.79}$As/GaAs heterostructures. In the PR spectrum, the caplayer thickness was 170 nm and Si$_{3}$N$_{4}$ was utilized as the capping material. The C peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, in the presence of the Si$_{2}$N$_{4}$ cap layer, band gap energy was low shifted. This result indicates that the Si$_{3}$N$_{4}$ cap layer controlled evaporation of the As atom.

Ni/Au와 Au/Al 전극 증착에 의한 GaN의 전기적 특성 연구 (Electrical Behavior of Ni/Ti and Au/Al Contact Metallization on GaN)

  • 이태근;최종운;허재근
    • 한국결정학회지
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    • 제14권2호
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    • pp.105-109
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    • 2003
  • Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

Fabrication of AlGaN-based vertical light-emitting diodes

  • Bae, Seon Min;Jeon, Hunsoo;Lee, Gang Seok;Jung, Se-Gyo;Kim, Kyoung Hwa;Yi, Sam Nyung;Yang, Min;Ahn, Hyung Soo;Yu, Young Moon;Kim, Suck-Whan;Cheon, Seong Hak;Ha, Hong-Ju;Sawaki, Nobuhiko
    • Journal of Ceramic Processing Research
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    • 제13권spc1호
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    • pp.75-77
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    • 2012
  • The AlGaN-based vertical light-emitting diodes (LEDs) on thick GaN epilayer were fabricated by a hydride vapor phase epitaxy with multi sliding boat system. The optical and electrical characteristics of AlGaN-based vertical LEDs were evaluated using a scanning electron microscopy, electroluminescence and I-V measurements. The AlGaN-based vertical LEDs structure has hexagonal symmetry, 500 ㎛ in diameter and above 67 ㎛ in growth thickness. At the room-temperature, the broaded strong peak and relatively high intensity peak were gradually measured at 405 nm with increasing injection current. And a forward operator voltage was measured to be about 7.5 V.

NiO 게이트 산화막에 의한 AlGaN/GaN MOSHFET의 전기적 특성 변화 (The Impact of NiO on the Electrical Characteristics of AlGaN/GaN MOSHFET)

  • 박용운;양전욱
    • 전기전자학회논문지
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    • 제25권3호
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    • pp.511-516
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    • 2021
  • AlGaN/GaN 반도체 위에 금속이 접합된 HEMT와 SiO2와 NiO를 게이트 층간막으로 갖는 MOSHFET를 제작하고 NiO 박막에 따른 효과와 특성변화의 원인을 연구하였다. HEMT 구조에서 보인 -3.79 V의 문턱전압은 SiO2를 층간막으로 했을 때 - 5.52 V로 -1.73 V의 음방향 변화를, NiO를 층간막으로 했을 때 -2.76 V로 +1.03 V의 양방향 변화를 나타냈다. 또 NiO MOSFET의 경우 선형성이 증가하여 넓은 범위에 걸쳐 균일한 트랜스컨덕턴스 특성을 나타냈으며 0 V 이상의 게이트 전압에서는 HEMT와 SiO2 MOSHFET보다 더 높은 값을 보였다. 게이트에 입력된 펄스신호가 -5 V~0 V로 스윙할 때 HEMT의 포화 드레인 전류는 0.1 Hz~10 Hz의 주파수에서 20%의 감소를 보인 뒤 그 값을 유지하였으나, NiO MOSHFET은 10 Hz에서부터 지속적으로 감소하여 서로 다른 응답특성을 보였다.