Journal of Ceramic Processing Research

Ceramic Processing Research Center (한양대학교 세라믹연구소)
권호 표지

Fabrication of AlGaN-based vertical light-emitting diodes

  • Bae, Seon Min (Department of Applied Sciences, Korea Maritime University) ;
  • Jeon, Hunsoo (Department of Applied Sciences, Korea Maritime University) ;
  • Lee, Gang Seok (Department of Applied Sciences, Korea Maritime University) ;
  • Jung, Se-Gyo (Department of Applied Sciences, Korea Maritime University) ;
  • Kim, Kyoung Hwa (Department of Applied Sciences, Korea Maritime University) ;
  • Yi, Sam Nyung (Department of Applied Sciences, Korea Maritime University) ;
  • Yang, Min (Department of Applied Sciences, Korea Maritime University) ;
  • Ahn, Hyung Soo (Department of Applied Sciences, Korea Maritime University) ;
  • Yu, Young Moon (LED-Marin Convergence Technology R&BD Center at Pukyong National University) ;
  • Kim, Suck-Whan (Department of Physics, Andong National University) ;
  • Cheon, Seong Hak (CSsol.Co., Ltd) ;
  • Ha, Hong-Ju (CSsol.Co., Ltd) ;
  • Sawaki, Nobuhiko (Department of Electrical and Electronics Engineering, Aichi Institute of Technology)
  • Published : 2012.07.01
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Abstract

The AlGaN-based vertical light-emitting diodes (LEDs) on thick GaN epilayer were fabricated by a hydride vapor phase epitaxy with multi sliding boat system. The optical and electrical characteristics of AlGaN-based vertical LEDs were evaluated using a scanning electron microscopy, electroluminescence and I-V measurements. The AlGaN-based vertical LEDs structure has hexagonal symmetry, 500 ㎛ in diameter and above 67 ㎛ in growth thickness. At the room-temperature, the broaded strong peak and relatively high intensity peak were gradually measured at 405 nm with increasing injection current. And a forward operator voltage was measured to be about 7.5 V.

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