• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.936-941
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• 2001

The influence of the ${Al_2}{O_3}$ particle size on flaw tolerance of the $ZrO_2/{Al_2}{O_3}$ composites prepared by mixing 5.31 mol% ${Y_2}{O_3}$-4.45 mol% ${Nb_2}{O_5}$-90.31 mol% $ZrO_2$ and ${Al_2}{O_3}$ was investigated. The composites exhibited rising R-curve behavior and plateau fracture toughness of 7.9 and $8.8MPam^{1/2}$ for the additions of 20 vol% of 0.2 and $2.8{\mu}m$ ${Al_2}{O_3}$ particles, respectively. The difference in the fracture toughness resistance was attributed mainly to the grain size of tetragonal $ZrO_2$ phase in the composites, which scaled with the ${Al_2}{O_3}$ particle size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.186-189
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• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.568-572
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• 2011

The preparation of $Y_2O_3$-doped $ZrO_2$ nanoparticles in Igepal CO-520/cyclohexane reverse micelle solutions is studied here. In this work, we synthesized nanosized $Y_2O_3$-doped $ZrO_2$ powders in a reverse micelle process using aqueous ammonia as the precipitant. In this way, a hydroxide precursor was obtained from nitrate solutions dispersed in the nanosized aqueous domains of a microemulsion consisting of cyclohexane as the oil phase, with poly (oxyethylene) nonylphenylether (Igepal CO-520) as the non-ionic surfactant. The synthesized and calcined powders were characterized by thermogravimetrydifferential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD) and transmission electron microscopy (TEM). The crystallite size was found to nearly identical with an increase in the water-to-surfactant (R) molar ratio. A FTIR analysis was carried to monitor the elimination of residual oil and surfactant phases from the microemulsion-derived precursor and the calcined powder. The average particle size and distribution of the synthesized $Y_2O_3$-doped $ZrO_2$ were below 5 nm and narrow, respectively. The TG-DTA analysis showed that the phase of the $Y_2O_3$-doped $ZrO_2$ nanoparticles changes from the monoclinic phase to the tetragonal phase at temperatures close to $530^{\circ}C$. The phase of the synthesized $Y_2O_3$-doped $ZrO_2$ when heated to $600^{\circ}C$ was tetragonal $ZrO_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.37-42
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• 2021

The effect of chemical composition on the structural and thermal properties of TiZrN thin films was studied. As the Zr fraction in the deposited TixZr1-xN (x = 0.87, 0.82, 0.7, 0.6, and 0.28) increased, microstructural changes consisted of reduction in the grain size and a gradual transition from columnar structure to granular structure were observed. In addition, it was also confirmed that a gradual crystal phase transition from TiN to TiZrN has occurred as the Zr fraction increased up to 0.4. After heat treatment at 900℃, Ti0.82Zr0.18N and Ti0.7Zr0.3N layers were converted to a form in which rutile phase TiO2 and TiZrO4 oxides coexist, while Ti0.6Zr0.4N layer was converted to TiZrO4 oxide. Among the five compositions of TiZrN films, the Ti0.6Zr0.4N showed the best high temperature stability and produced a significant enhancement in the thermal oxidation resistance of Inconel 617 through suppressing the surface diffusion of Cr caused by thermal oxidation of the Inconel 617 substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.172-173
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• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.772-776
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• 1994

Using two kinds of ZrO2 powder stabilized by 8 mol% and 3 mol% of Y2O3 several microstructures were designed; two single composition specimens of 8 mol% Y2O3-ZrO3 and 3 mol% Y2O3-ZrO2 and five mixture specimens with multi-layered structure and particulate mixture structure at a mixing ratio of 1:1 by weight. Electrical conductivities were measured from 250 to 75$0^{\circ}C$ in air using an impedance analyser, and fracture toughness at room temperature using the indentation method. Making the mixture structures was more effective in enhancing fracture toughness than electrical conductivity. At low temperatures 3 mol% Y2O3-ZrO2 showed the highest values in both electrical conductivity and fracture toughness, while at high temperature the specimens of alternately stacked planar and coarse granulated structure were most favorable.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.170-171
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• 2008

The etching characteristics of Zirconium Oxide ($ZrO_2$) and etch selectivity of $ZrO_2$ to Si in HBr/$SF_6$ plasma were investigated. It was found that $ZrO_2$ etch rate shows a non-monotonic behavior with increasing both HBr fraction in $SF_6$ plasma, Source power, Bias Power, gas pressure. The maximum $ZrO_2$ etch rate of 54.8 nm/min was obtained for HBr(25%)/$SF_6$(75%) gas mixture. From these data, the suggestions on the $ZrO_2$ etch characteristics were made.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.562-568
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• 2001

Devitrifiable solder glass/$ZrB_2$ sintered composites were prepared by using glass with the composition of $60ZnO-20B_2O_3-10SiO_2-10PbO$(in wt%) and $ZrB_2$, powder as starting materials under the $N_2$atmosphere. $ZrB_2$which the good conduction materials showed sensitive oxidation characteristics, because some parts of the $ZrB_2$in specimens changed into the insulated phase of $ZrO_2$. These Phenomena would be estimated that it caused a few amount of residual oxygen in the furnace and/or specimens and the coordination number change of $B_2O_3$ in the glass. The sintering temperature and the mixed ratios of each phase were control of large ranged the resistivity ranged from 10 to 10$^{3}{\Omega}/cm^2$ orders, and to make a conductible microstructure. From these results, it would be explained that the conduction path of $ZrB_2$particles built up within sintered glass matrix.

• Transactions of the Korean hydrogen and new energy society
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• v.23 no.6
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• pp.654-659
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• 2012

The interest in water gas shift (WGS) reaction has grown significantly, as a result of the recent advances in fuel cell technology and the need to develop small-scale fuel processors. Recently, researchers have tried to overcome the disadvantages of the commercial WGS catalysts. As a consequence, supported Pt catalysts have attracted a lot of researchers due to high activity and stability for WGS at low temperatures. In this study, $Pt-Na/Ce_{(1-x)}Zr_{(x)}O_2$ catalysts with various Ce/Zr ratio have been applied to WGS at a gas hourly space velocity (GHSV) of $45,515h^{-1}$. According to TPR patterns of $Pt-Na/Ce_{(1-x)}Zr_{(x)}O_2$ catalysts, the reducibility increases with decreasing the $ZrO_2$ content. As a result, Cubic structure $Pt-Na/Ce_{(1-x)}Zr_{(x)}O_2$ catalysts exhibited higher CO conversion than tetragonal structure $Pt-Na/Ce_{(1-x)}Zr_{(x)}O_2$ catalysts. Expecially, Pt-Na/$CeO_2$ exhibited the highest CO conversion as well as 100% selectivity to $CO_2$. Moreover, Pt-Na/$CeO_2$ catalyst showed relatively stable activity with time on stream. The high activity of cubic structure Pt-Na/$CeO_2$ catalyst was correlated to its higher oxygen storage capacity (OSC) of $CeO_2$ and easier reducibility of Pt/$CeO_2$.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.319-324
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• 2013

The partial oxidation reaction of methane was investigated to produce syngas with $Ni/CeO_2-ZrO_2$, $Ni-Ru/CeO_2-ZrO_2$ and $Ni-Pd/CeO_2-ZrO_2$ catalysts. Honeycomb metallic monolith was applied in order to obtain high catalytic activity and stability in partial oxidation reforming. The catalysts were characterized by XRD and FE-SEM. The influence of various catalysts on syngas production was studied for the feed ratio (O/C), GHSV and temperature. Among the catalysts used in the experiment, the $Ni-Pd/CeO_2-ZrO_2$ catalyst showed the highest activity. The 99% of $CH_4$ conversion was obtained at the condition of T=$900^{\circ}C$, GHSV=10,000 $h^{-1}$ and feed ratio O/C=0.55. It was confirmed that $H_2$ yield increased slightly as O/C ratio increased, while CO yield remained almost constant. Also, $CH_4$ conversion decreased as GHSV increased. It was found that the safe range of GHSV for high $CH_4$ conversion was estimated to be less than 10,000 $h^{-1}$.