• Korean Journal of Materials Research
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• v.5 no.7
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• pp.888-896
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• 1995

In this paper the manufacture of shrinkage-free in situ Mullite-ZrO$_2$ceramics through the addition of Al base metal powder to the mixture of ZrSiO$_4$and A1$_2$O$_3$was attempt. The ZrO$_2$-strengthened mullite ceramics was prepared after the following reaction form, 3(Al+Al$_2$O$_3$)+2ZrSiO$_4$longrightarrow3A1$_2$O$_3$.2SiO$_2$+2ZrO$_2$Al metal powder was added from none to 30 weight percent to the A1$_2$O$_3$. The powders were mechanically mixed, isostatically pressed and reaction sintered at 1450-1$600^{\circ}C$ for 3hours. The specimens were sintered with and without intrim soaking time for 5 hours at 125$0^{\circ}C$ for the oxidation of Al-powder The addition of aluminium accelerates the reaction and compensate the shrinkage during the sintering through an increase in volume of oxidized Al. Because coarse flake type Al metal powders were not effectively milled, oxidized Al resulted in the relative large pore in the specimen.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.519-526
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• 2001

The effects of methyl isobutyl ketone(MIBK)/ethanol(EtOH) solvent mixtures on the dispension, particle size distribution and rheology of $Al_2$O$_3$/ZrO$_2$ nonaqueous suspensions were investigated by measuring sedimentation density and viscosity. The sedimentation density of $Al_2$O$_3$ and ZrO$_2$ particles increased in MIBK-rich($\geq$60 vol%) solvents with 'Hypermer' KD-1 as a dispersant. The ball-milled suspensions in 80MIBK/20EtOH(vol%) solvent exhibited the narrow and unimodal particle size distribution. Although all Suspensions exhibited the Pseduo-Plastic flow(Shear thinning) the shear thinning behavior was somewhat different depending on the mixture ratio of $Al_2$O$_3$/ZrO$_2$ and MIBK/EtOH. Under a given shear rate( <300 s$^{-1}$ for $Al_2$O$_3$; <3000 s$^{-1}$ for ZrO$_2$) the strongest shear thinning appeared in the $Al_2$O$_3$ and ZrO$_2$ suspensions with pure MIBK solvent. The shear thinning was nearly independable on the mixture ratio of $Al_2$O$_3$/ZrO$_2$ in case of using the identical solvent(80MIBK/20EtOH, vol%).

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.608-612
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• 2005

Microstructure and mechanical properties of fibrous $A1_2O_3-(m-ZrO_2)/t-ZrO_2$ composite were investigated depending on the dimensional array. By the change of stacking arrangement of fibrous filaments, 2 and 3-dimensional fibrous composites were successfully obtained without bulk defects such as shrinkage cavity and cracks. The maximum mechanical properties were achieved In the 3-dimensional array composite, due to the fine fibrous and dense microstructure control, in which the values of vickers hardness, fracture toughness and bending strength were about 1507 Hv, $7.2MPa{\cdot}m^{1/2}$ and 650 MPa, respectively.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.774-780
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• 1997

Porous low reflective coating films of SiO2.ZrO2 system were prepared from the mixed alkoxide solutions of Zr(O-nC3H7)4 and partially prehydrolyzed TEOS by the sol-gel method using the dip-coating technique. In the case of 90SiO2.10ZrO2 porous coating films with HCl and H2O content was 0.3 mole and 4 mole, 378 m2/g of the specific surface area, 0.254 cm3/g of total pore volume, 30-50$\AA$ of average pore diameter. The transmittance of 90SiO2.10ZrO2 porous coated films was 95.38% at the wavelength of 550 nm, compared with the parent glass, the transmittance was increased with 4.38%.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.201-210
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• 1990

The mullite-15v/o ZrO2 composites were prepared by dispersing ZrO2-3m/o Y2O3 powders into the mullite matrix in order to improve the mechanical properties of the mullite. The densification and retention of t-ZrO2 in the matrix of synthetic mullite were also investigated. From IR spectroscopic analysis, the obtained amorphous SiO2-Al2O3 powder was observed to have Si-O-Al chemical bond in its structure which might result in the homogeneous mullite composition. The lattice parameter of the mullite powder calcined above 130$0^{\circ}C$ (a0=7.5468$\AA$) is nearly close to the value of stoichiometric mullite (71.8wt% Al2O3, a0=7.5456$\AA$). The sintering behavior, microstructure, flexural strength and fracture toughness of the mullite and mullite-15v/o ZrO2 composites have been studied. The mullite-15v/o ZrO2(+3m/o Y2O3) ceramics with relative densities of 96% were obtained when sintered at 1$600^{\circ}C$. The flexural strength and fractrue toughness of the composites sintered at 1$600^{\circ}C$(calcination temperature of mullite powders ; 125$0^{\circ}C$) had maximum values of 307MPa and 2.50MPa.m1/2, respectively. The fracture toughness improvement in the mullite-ZrO2 cmoposite is assumed to be resulted from the combined effect of the stress-induced phase transformation of tetragonal ZrO2 and the crack deflection due to microcracking by the monoclinic ZrO2 formation.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.95-100
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• 2018

In this study, $ZrO_2$ ceramic ink was formulated for additive manufacturing three dimensional structure using dispenser printing technique. Ceramic ink with various $ZrO_2$ loading (30, 40, 50vol%) was prepared to evaluate their rheological properties and printability. High $ZrO_2$ loading $ZrO_2$ ceramic ink showed higher elastic modulus and improved shape retention, when the ceramic ink was printed and sintered at $1450^{\circ}C$ for 1h. Microstructural analysis of printed $ZrO_2$ objective indicated that high $ZrO_2$ loading objective showed lower porosity and smaller pore size.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.52-61
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• 2003

$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{\circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.

• Transactions of Materials Processing
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• v.17 no.5
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• pp.364-372
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• 2008

In this study, the circumferential creep behaviors ofpilgered advanced Zirconium alloy tubes such as Zr-Nb-O and Zr-Nb-Sn-Fe were investigated in the temperature range of $400\sim500^{\circ}C$ and in the stress range of 80$\sim$150MPa. The test results indicate that the stress exponent for the steady-state creep rate of the Zr-Nb-Sn-Fe alloy decreases with the increase of stress(from 6$\sim$7 to 4), while that of the Zr-Nb-O alloy is nearly independent of stress(5$\sim$6). The activation energy of creep deformation is found to be nearly the same as the activation energy for Zr self diffusion. This indicates that the creep deformation may be controlled by dislocation climb mechanism in Zr-Nb-O. On the other hand, the transition of stress exponent(from 6-7 to 4) in Zr-Nb Sn-Fe strongly suggests the transition of the rate controlling mechanism at high stresses. The lower stress exponent at high stresses in Zr-Nb-Sn-Fe can be explained by the dynamic deformation aging effect caused by interaction of dislocations with Sn substitutional atoms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.5
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].