• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1256_1257
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• 2009

We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.54-54
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• 2009

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.66-66
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• 2008

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.99-108
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• 1993

저압화학증착법에 의해 제조된 hemispheircal 및 rugged Si 박막들은 64 Mbit DRAM 이상의 캐패시터에 사용하기 위해 개발되었다. 이 공정을 사용하므로써 종래에 사용되던 Si 전극의 평평한 표면이 hemispherical 혹은 rugged 박막 형태의 표면으로 변한다. 위와 같은 박막은 비정질 Si 표면에서 핵생성되며 Si 원자 확산에 의해 결정립들이 결정체로 성장한다. 화학증착의 변수, 열처리 및 in-situ doping process들은 hemispherical 및 rugged Si 박막의 미세구조에 영향을 준다. 동일 두께에서는 고온에서 이루어질 때 혹은 동일 온도일 경우에는 얇은 박막층일 때에 하부전극의 표면들이 rugged poly Si 형상을 나타내며 이렇게 됨으로써 유효면적은 2.1배로 증가한다. 이와 같은 캐패시터 유효면적 증가는 대체로 높은 신뢰성을 갖는 두꺼운 절연막을 사용하면서 stack 캐패시터 구조의 높이를 감소시킬 수 있다. 따라서 이러한 제조기술은 차세대 캐패시터에 적용될 수 있다.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.61-67
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• 1996

The growth and characterization of heteroepitaxial $Si_{1-x}Ge_{x}$ films grown by the RTCVD (Rapid Thermal Chemical Vapor Deposition) method were described. For the growth of $Si_{1-x}Ge_{x}$ heteroepitaxial layers, $SiH_{4}$ / $GeH_{4}$ / $H_{2}$ gas mixtures were used. The growth conditions were varied to investigate their effects on the Si / Ge composition ratios, the interface abruptness and crystalline properties. The experimental data shows that the misfit threading dislocation in $Si_{1-x}Ge_{x}$ / Si heteroepitaxial film of about $400\;{\AA}$ thickness was not observed at the growth temperature of as low as $650^{\circ}C$, and the composition ratios of Si / Ge changed linearly with $SiH_{4}$ / $GeH_{4}$ gas mixing ratios in our experimental ranges. In the in-situ boron doping experiments, the doping abruptness would be controlled within several hundreds ${\AA}$/decade.

• Progress in Superconductivity
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• v.9 no.1
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• pp.68-73
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• 2007

We fabricated the in-situ $MgB_2$ wires using the powder-in-tube method and investigated the effects of sintering temperature and SiC contents on the microstructure and superconducting properties. Pure $MgB_2$ wires and 5, 10, 20 wt.% SiC doped $MgB_2$ wires were sintered at $600-1000^{\circ}C$ for 30 minutes in Ar atmosphere. We found that $MgB_2$ phase was mostly formed at the sintering temperature of $700^{\circ}C$ and above, and the critical temperature ($T_c$) increased with increasing sintering temperature. For the $MgB_2$ sintered at $850^{\circ}C$, the highest critical current density ($J_c$) was obtained to be $3.7{\times}10^5\;A/cm^2$ at 5 K and 1.6 T by a magnetic properties measurement system (MPMS). The addition of SiC to the $MgB_2$ wires changed microstructure and critical properties. SEM observation showed that the $MgB_2$ core had considerable micro-cracks in undoped wire and the density of micro-cracks decreased with increasing SiC contents. The critical temperature decreased as the SiC contents increased, on the other hand, the critical current density of SiC doped $MgB_2$ wires in high magnetic field was enhanced compared to that of undoped $MgB_2$ wires.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• Progress in Superconductivity and Cryogenics
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• v.16 no.3
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• pp.4-6
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• 2014

Among Fe-based superconductors, potassium doped $BaFe_2As_2$ is favorable for applications because of its relatively high transition temperature and low anisotropy. To study the superconducting properties and the applicable aspects, high quality thin films of potassium doped $BaFe_2As_2$ should be fabricate. However, the high volatility of potassium makes it difficult to fabricate thin films of this compound. In this paper, we discuss the details of the experimental conditions used to fabricate $Ba_{1-x}K_xFe_2As_2$ films by ex situ PLD method. In the first set of samples, barium ratio in the target was controlled to make films with various potassium doping rate. However, in the second set of samples, the amount of potassium was controlled to find out optimal conditions for making high quality $Ba_{1-x}K_xFe_2As_2$ films.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.96-101
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• 2003

Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.