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Fabrication details of Ba1-xKxFe2As2 films by pulsed laser deposition technique

  • Lee, Nam Hoon (BK21 Physics division and Department of Physics, Sungkyunkwan University) ;
  • Jung, Soon-Gil (BK21 Physics division and Department of Physics, Sungkyunkwan University) ;
  • Ranot, Mahipal (BK21 Physics division and Department of Physics, Sungkyunkwan University) ;
  • Kang, Won Nam (BK21 Physics division and Department of Physics, Sungkyunkwan University)
  • Received : 2014.05.22
  • Accepted : 2014.06.25
  • Published : 2014.09.30

Abstract

Among Fe-based superconductors, potassium doped $BaFe_2As_2$ is favorable for applications because of its relatively high transition temperature and low anisotropy. To study the superconducting properties and the applicable aspects, high quality thin films of potassium doped $BaFe_2As_2$ should be fabricate. However, the high volatility of potassium makes it difficult to fabricate thin films of this compound. In this paper, we discuss the details of the experimental conditions used to fabricate $Ba_{1-x}K_xFe_2As_2$ films by ex situ PLD method. In the first set of samples, barium ratio in the target was controlled to make films with various potassium doping rate. However, in the second set of samples, the amount of potassium was controlled to find out optimal conditions for making high quality $Ba_{1-x}K_xFe_2As_2$ films.

Keywords

References

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