• 제목/요약/키워드: Impurity effect

검색결과 266건 처리시간 0.021초

알루미나의 소결 중 CaO 불순물의 미세구조에 미치는 영향 (Effects of CaO Impurity on Microstructural Evolution during Sintering of Alumina)

  • 김상섭;백성기
    • 한국세라믹학회지
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    • 제29권1호
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    • pp.1-8
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    • 1992
  • The effect of CaO impurity on the microstructural evolution during the sintering of ultrapure alumina(>99.999%) was studied under "clean" firing conditions. The sinterability of undoped alumina was low, but its microstructure was maintained uniform. In the case of CaO-doped alumina, the distribution of grain size and that of grain boundary dihedral angle became wider, and facetted pores observed frequently. When MgO was doped in addition to CaO, the sinterability increased drastically and the uniform microstructural characteristics resumed. This study suggests that the effect of CaO is to induce inhomogeneous microstructures presumably by anisotropic segregation to grain boundaries and pore surfaces, and that MgO suppresses the anisotropic segregation of Ca.

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아공정 Al-Si합금 조직에 미치는 Sc의 효과 (The Effects of Sc on the Microstructure of Hypoeutectic Al-Si Alloys)

  • 김명한;이종태
    • 한국주조공학회지
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    • 제24권3호
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    • pp.145-152
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    • 2004
  • The eutectic Si in Al-8.5wt.%Si alloy was changed from large flake to fine lemellar(or fibrous) shape when the Sc amount in the Al-Si alloy reaches 0.2wt.%. The optimum amount of Sc for the best modification effect was 0.8wt.% and slight decrease of modification effect occurred over this value. The study on the distribution of the modifiers(Sr, Na, and Sc) and the measurement of the surface tension of the Al-8.5wt.%Si alloy melt added with Sr, Na, and Sc modifier, respectively, reveals that Sc modifies the eutectic Si by the decrease of surface tension, while Sr and Na modify the eutectic Si mainly by impurity induced twinning mechanism.

진단용 X 선관 절연유의 전기적 특성 (Electrical Properties of Insulating Oils for Diagnostic X-ray Tube)

  • 김건중;이인성;백금문;김두호;김왕곤;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.597-600
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    • 2001
  • In order to investigate the electrical properties of X-ray tube oils for insulating and cooling, the breakdown characteristics in temperature range of $20\sim100[^{\circ}C]$, that of AC breakdown in 0.5~2.5[mm] of gap length, we are made researches. The classification for the physical properties of oil for X-ray tube by FTIR and H-NMR experiments was confirmed to type of mineral oils. As for the dependance of breakdown characteristics due to electrode gap length, breakdown voltage was found nearly uniform by impurity effect according to the increase of gap. As a result the characteristics for AC breakdown, the dielectric strength was increased to $90[^{\circ}C]$ but decreased over $90[^{\circ}C]$ in the temperature range.

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진단용 X 선관 절연유의 전기적 특성 (Electrical Properties of Insulating Oils for Diagnostic X-ray Tube)

  • 김건중;이인성;백금문;김두호;김왕곤;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.597-600
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    • 2001
  • In order to investigate the electrical properties of X-ray tube oils for insulating and cooling, the breakdown characteristics in temperature range of 20∼100[$^{\circ}C$], that of AC breakdown in 0.5∼2.5(mm) of gap length, we are made researches. The classification for the physical properties of oil for X-ray tube by FTIR and $^1$H-NMR experiments was confirmed to type of mineral oils. As for the dependance of breakdown characteristics due to electrode gap length, breakdown voltage was found nearly uniform by impurity effect according to the increase of gap. As a result the characteristics for AC breakdown, the dielectric strength was increased to 90[$^{\circ}C$] but decreased over 90[$^{\circ}C$] in the temperature range.

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분무합성법으로 성장시킨 Indium Sulfide 박막의 Hall 효과 특성 (Properties Hall Effect of Indium sulfide Thin Film Prepared by Spray Pyrolysis Method)

  • 오금곤;김형곤;김병철;최영일;김남오
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권7호
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    • pp.304-307
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    • 2005
  • The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

EFFECT OF IMPURITIES ON THE MICROSTRUCTURE OF DUPIC FUEL PELLETS USING THE SIMFUEL TECHNIQUE

  • Park, Geun-Il;Lee, Jae-Won;Lee, Jung-Won;Lee, Young-Woo;Song, Kee-Chan
    • Nuclear Engineering and Technology
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    • 제40권3호
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    • pp.191-198
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    • 2008
  • The influence of fission products' contents on the DUPIC fuel powder and pellet properties was experimentally evaluated using SIMFUEL as a surrogate for actual spent PWR fuel due to the high radioactivity of spent fuel. Pure $UO_2$ and SIMFUEL pellets with fission products equivalent to a burn-up of 35,000 MWd/tU and 60,000 MWd/tU were used as impurities in this study. The specific surface area of the powder milled after the OREOX treatment increased and resulted in sintered pellets with a theoretical density (TD) higher than 95%, regardless of the impurity contents. However, the grain size of the sintered pellets decreased with the increasing impurity contents. As a result of the dissolved oxides in $UO_2$ from the impurity groups, the specific surface area of the OREOX powder increased with an increase of the impurities. The grain size of the sintered pellets was significantly decreased by the metallic and oxide precipitates.

III, IV족 불순물이 첨가된 ZnO의 전자상태계산 (Calculation on Electronic Structure of ZnO with Impurities Belonging to III and IV Family)

  • 이동윤;김현주;구보근;이원재;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.309-312
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    • 2004
  • The electronic structure of ZnO oxide semiconductor having high optical transparency and good electric conductivity was theoretically investigated by $DV-X_{\alpha}$(the discrete variation $X_{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The electrical and optical properties of ZnO are seriously affected by the addition of impurities. The imnurities are added to ZnO in order to increase the electric conductivity of an electrode without losing optical transparency. In this study, the effect of impurities of III and IV family on the band structure, impurity levels and the density of state of ZnO were investigated. The cluster model used for calculations was $[MZn_{50}O_{53}]^{-2}$(M=elements belonging to III and IV family).

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