• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.18 no.1
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• pp.83-90
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• 2020

The Graphite Isotope Ratio Method (GIRM) can verify non-proliferation of nuclear weapon by estimating the total plutonium production in a graphite-moderated reactor. Using the reactor, plutonium is generated and accumulated through the ²³⁸U neutron capture reaction, and impurities in the graphite are converted to nuclides due to the nuclear reaction. Therefore, the amount of plutonium production and concentration of the impurities are correlated. However, the plutonium production cannot be predicted using only the absolute concentration of the impurities. It can only be predicted when the initial concentration of the impurities is obtained because the concentration, at a certain time, depends on it. Nevertheless, the ratios of the isotopes in an element are known regardless of the impurity of an element in the graphite moderator. Thus, the correlation between the isotope ratio and amount of plutonium produced helps predict plutonium production in a graphite-moderated reactor. Boron, Lithium, Chlorine, Titanium, and Uranium are known as indicator elements in the GIRM. To assess whether the correlation between the indicator isotope and amount of plutonium produced is independent of the initial concentration of the impurities, four different impurity compositions of graphite were used. ¹⁰B/¹¹B, ³⁶Cl/³⁵Cl, ⁴⁸Ti/⁴⁹Ti, and ²³⁵U/²³⁸U had a consistent correlation with the cumulative plutonium production, regardless of the initial impurity concentration of the graphite, because these isotopes were not generated through the nuclear reaction of other elements. On the other hand, the correlation between ⁶Li/⁷Li and plutonium production depended on the initial concentration of the impurities in graphite. Although ⁷Li can be produced through the neutron capture reaction of ⁶Li, the (n, α) reaction of ¹⁰B was the major source of ⁷Li. Therefore, the initial concentration of ¹⁰B affected the production of ⁷Li, making Li unsuitable as an indicator element for the GIRM.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.7
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• pp.462-469
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• 1987

A metal gate MOSFET with source/drain regions self-aligned to gate region is proposed. The proposed MOS transistor is fabricated by utilizing the higher oxidation rate of source/drain regions with high doping concentration when compared with channel region with moderate doping. The thick oxide on the source/drain regions reduces the gate and drain(source) overlap capacitance down to that of a self-aligned polysilicon gate device while allowing the use of a metal gate with much lower resistivity than the more commonly used polycrystalline silicon. A ring oscillator composed of 15 inverter stages has been computer simulated using SPICE. The results of the simulation show good agreement with experimental measurement confirming the fast switching speed of propesed MOSFET.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.325-328
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced $\Delta$ Rp increase using buffered N- implantation with tilt and 4X-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N- concentration which is intentionally caused by Ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation.

• Journal of Korea Foundry Society
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• v.15 no.5
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• pp.507-513
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• 1995

The effect of forced convention on the solute redistribution of the Al ingot was studied quantitatively in an effort to fabricate high purity aluminum using a segregation method. Based on the experimental results, the solute concentration in the solid phase tended to decrease at the early state of solidification, and then increased gradually as solidification proceeded. Fe and Si concentrations decreased as growth rate decreased and as revolution speed increased. The solute redistribution obtained from the BPS model incorporated with the tangential flow component as well as the axial flow component within the melt, agreed well with the measurements.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.817-824
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• 1996

Removal of Cu impurities on Si substrates using remote H-plasma was investigated. Si substrates were intentionally contaminated by 1ppm ${CuCI}_{2}$, standard chemical solution. To determine the optimal process condition, remote H-plasma cleaning was conducted varying the parameters of rf power, cleaning time and remoteness(the distance between the center of plasma and the surface of Si substrate). After remote H-plasma cleaning was conducted, Si surfaces were analysed by TXRF(total x-ray reflection fluorescence) and AFM(atomic force microscope). The concentration of Cu impurity was reduced by more than a factor of 10 and its RMS roughness was improved by more than 30% after remote H-plasma cleaning. TXRF analysis results show that remote H-plasma cleaning is effective in eliminating Cu impurity on Si surface when it is performed under the optimal process condition. AFM analysis results also verifies that remote H-plasma cleaning makes no damage to the Si surface. The deposition mechanism of Cu impurity may be explained by the redox potential(oxidation-reduction reaction potential) theory. Based on the XPS analysis results we could draw a conclusion that Cu impurities on the Si substrate are removed together with the oxide by a "lift-off" mechanism when the chemical oxide( which forms when Cu ions are adsorbed on the Si surface) is etched off by reactive hydrogen atoms.gen atoms.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.19-31
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• 1996

To invetigate the impurity distribution in GaAs crystal grown by horizontal Bridgman method, we constructd the mathematical model describing heat transfer, mass transfer and fluid flow n transient growth of GaAs. Galerkin finite element method and implicit time integration were used to solve the equations and simulate the transient growth. The concentration distribution is similar to the case of diffusion controlled growth when Gr - 0. With the increase of Gr the concentration profile is distroted and the minimum solute concentration appears near the interface. As solidification prosceeds, interface deflection increases steadily and transverse segregation increases until mixing by flow becomes steady. The axial segregation increases with solidification. But, with high intensity of flow axial segregation becomes steady after short transient. At small and large Gr the result showed a good agreememt with the prediction Smith and Scheil.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.448-454
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• 2007

Hydrothermal synthesis was conducted with starting material as Barium hydroxide and hydrous titania ($TiO_2{\cdot}xH_2O$) to obtain barium titanate fine Powder. The conversion, crystal structure and properties of as-prepared powder were investigated according to reaction temperature, time and concentration. The effect of variables on conversion was in order of time < temperature < concentration and the maximum conversion reached to 99.5% in the case of hydrothermal synthesis at $180^{\circ}C$ for 2 h with 2.0 M reactant concentration. At low concentration such as 0.25 M, formation of unreacted $BaCO_3$ and $TiO_2$ was not inevitable at even high reaction temperature and these components converted into $BaTi_2O_5$ at high temperature and remained as impurity. As concentration of reactant increased, the size of as-synthesized $BaTiO_3$ powder deceased and Ba/Ti molar ratio approached into 1, showing Ba/Ti ratio of $1{\pm}0.005$ for reaction at $180^{\circ}C$ for 2 h with 2.0 M concentration.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.112-115
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• 2010

Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity ($\rho$), carrier concentration (n), and hall mobility ($\mu$) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity ($8.5 \times 10^{-2}$ ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.