• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.389-394
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• 1997

The distribution of impurity included in benzene layer crystal was explored in layer crystallization of cyclohexane and benzene mixtures. The influence of crystal growth rate on crystal purity was investigated. All experimental results for bezene-cyclohexane system obtained in layer crystallizer have been evaluated with the criterion of Wintermantel. The purity of crystal decreases with increasing degree of subcooling, decreasing feed concentration and increasing crystal growth rate. The crystal growth rate was a key parameter to determine the inclusion of impurity in crystals. The results obtained from runs performed at increasing crystallization time(i.e. crystal thickness) have clearly shown that migration of inclusions within crystal layer to the melt, leading to the removal of impurity occurs. The diffusion of impurity which takes place during the crystallization from the beginning, enhances a further purification of the crystal layer if that underwent a thermal gradient after growth of the layer crystal stops.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2879-2888
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• 2023

In fusion environments, large scales of helium (He) atoms are produced by a radical transformation along with structural damage in structural materials, resulting in material swelling and degradation of physical properties. To understand its irradiation effects, this paper investigates the stability, electronic structure, energetics, charge density distribution, PDOS and TDOS, and diffusion processes of He impurities in 6HSiC materials. The formation energy indicates that a stable, favorable position for interstitial He is the HR site with the lowest energy of 2.40 eV. In terms of vacancy, the He atom initially prefers to substitute at pre-existing Si vacancy than C vacancy due to lower substitution energy. The minimum energy paths (MEPs) with migration energy barriers are also calculated for He impurity by interstitial and vacancy-mediated diffusion. Based on its calculated energy barriers, the most possible diffusion path includes the exchange of interstitial and vacancy sites with effective migration energies ranging from 0.101 eV to 1.0 eV. Our calculation provides a better understanding of the stabilization and diffusion behaviors of He impurities in 6H-SiC materials.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.7-19
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• 1981

Anodization method is utilized in order to measure diffusion profiles of boron and arsenic in silicon. The solution used for silicon anodization is Ethylene glycol +KNO3(0.04N), The thickness of silicon which is consumed by a single 200V anodization is 460$\pm$40A regardless of wafer type. The profiles of boron and arsenic in silicon after predeposition process are investigated. The diffusion coefficients of both dopants depending on impurity concentration are extrated from these profiles. The base pull-in effect has been observed in prototype npn transistors with arsenic doped emitter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.3
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• pp.95-102
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• 1985

An efficient numerical scheme for assessing the two-dimensional diffusion problem for modelling impurity profile in semiconductor is described. 4 unique combination of ADI (Al-ternating Direction Bmplicit) method and Gauss Elimination has resulted in a reduction of CPU time for most diffusion processes by a factor of 3, compared to other iteration schemes such as SOR (Successive Over-Relaxation) or Stone's iterative method without additional storage re-quirement. Various numerical schemes were compared for 2-D as well as 1-0 diffusion profile in terms of their CPU time while retaining the magnitude of relative error within 0.001%. good agree-ment between 1-D and 2-D simulation profile as well as between 1-D simulation profile and experiment has been obtained.

• Journal of the Korean Institute of Telematics and Electronics
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• v.7 no.2
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• pp.33-42
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• 1970

This report is concerned with the fahrication with the falricationof silicon VVC diode by the double diffusion planer technique. At first, some design charts for VVC diode were derived by considering the voltage-capacitance relations, the critical field intensity at the metallurgical junction, and the cut-off frequency of the diode. These charts enables the fabrication engineers to design VVC diode easily without going into the sophisticated design theory. We started with a 2.5 ohm-cm n-type epitaxial silicon wafer. The phosphorous was diffused by POCl3 impurity source. Then boron diffusion followed make hyperabrupt p-n junction by BN source. The maximum to minimum capacitance ratio of the diode as a tuning diode for a TV tuner made in these experiments was 4:1. Measured electrical characteristics of the sample diodes showed in good agreement with the theoretical expectations. Slicing and polishing technique of the silicon wafer and diffusion technique of the impurity atoms, which were employed in our study, are also stated briefly in this report.

• Laser Solutions
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• v.13 no.1
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• pp.6-10
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• 2010

Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polycrystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.5 no.3
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• pp.232-239
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• 1993

In this paper the effect of wave motion acting on the natural folds of dispersed material in the coastal zone is studied. After integrating the usual diffusion equation with respect to the depth using shallow-water approximation simpler equation for integrated concentration was obtained. which holds for long waves of arbitrary amplitude and far any arbitrary barotropic flows. Different situations of long wave action on impurity concentration in the frame of this equation are considered.

• Applied Science and Convergence Technology
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• v.27 no.4
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• pp.65-69
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• 2018

We studied the critical pressure characteristics of an anode type ion beam source driven by both charge repulsion and diffusion mechanism. The critical pressure $P_{crit}$ of the diffusion type ion beam source was linearly decreased from 2.5 mTorr to 0.5 mTorr when the gas injection was varied in 3~10 sccm, while the $P_{crit}$ of the charge repulsion ion beam source was remained at 3.5 mTorr. At the gas injection of 10 sccm, the range of having normal beam shape in the charge repulsion ion beam source was about 6.4 times wider than that in the diffusion type ion beam source. An impurity of Fe 2p (KE = 776.68 eV) of 12.88 at. % was observed from the glass surface treated with the abnormal beam of the charge repulsion type ion beam source. The body temperature of the diffusion type ion beam source was observed to increase rapidly at the rate of $1.9^{\circ}C/min$ for 30 minutes and to vary slowly at the rate of $0.1^{\circ}C/min$ for 200 minutes for an abnormal beam and normal beam, respectively.