• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1506-1508
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• 2005

VCO(voltage controlled oscillator) using mobile communication device decides direct characteristics as parts that affect important in stable oscillation and distortion characteristics of system. VCO used 900 MHz band was designed by the transformation of Colpitts circuit form use ADS that consider Q-factor to minimize phase noise. VCO manufactured together evaluation board and voltage control oscillator to FR-4 PCB. VCO experimented chracteristics after control through resonance department tuning. In our research, the designed VCO has 15.5 dBm output level at the bias condition of 6V and 10mA and the operating frequency range of 917 MHz$\sim$937 MHz band. Phase noise is -98.28 dBc/Hz at 1 MHz frequency offset from the carrier.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.382-384
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• 1995

The advancement of power semiconductor devices has given great attribution to the performance and reliability or power conversion systems. But contemporary power devices have room for improvement. So much interest and endeavor are being applied to develop an improved power devices. The MOS-Controlled Thyristor(MCT)is a recently developed power device which combines four layers thyristor structure and MOS-gate. Owing to advantages compared to other devices in many respects, the MCT attracts much notice recently. Nowadays, in designing and manufacturing power conversion systems, the importance of circuit simulation for reducing cost and time is incensed. And to excute the simulation that resemble the real system as much as possible, to develop a model of power device that provides properly static and dynamic characteristics is important. So, this paper presents a PSPICE model of the MCT considering dynamic characteristics.

• Journal of Auto-vehicle Safety Association
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• v.15 no.4
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• pp.32-38
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• 2023

With the transition from internal combustion engine vehicles to eco-friendly cars, it has become essential to systematically construct an education system for electric vehicles based on high-voltage electric devices. In this study, we discussed the establishment of an educational system for electric vehicles based on high-voltage electric devices and proposed methods for qualifications after completing the education. To ensure systematic education, we presented a classification of learners according to their levels and job competencies. Additionally, we emphasized the importance of providing adequate practical training equipment for courses that require higher qualifications. Finally, to distinguish between the levels of completion of training and practical skills, we highlighted the necessity of implementing a system to certificates to individuals who have successfully completed the systematic training program.

• Journal of Electrical Engineering and Technology
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• v.6 no.6
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• pp.769-775
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• 2011

Custom power devices such as dynamic voltage restorer (DVR) and DSTATCOM are used to improve the power quality in distribution systems. These devices require real power to compensate the deep voltage sag during sufficient time. An interline DVR (IDVR) consists of several DVRs in different feeders. In this paper, a neural network is proposed to control the IDVR performance to achieve optimal mitigation of voltage sags, swell, and unbalance, as well as improvement of dynamic performance. Three multilayer perceptron neural networks are used to identify and regulate the dynamics of the voltage on sensitive load. A backpropagation algorithm trains this type of network. The proposed controller provides optimal mitigation of voltage dynamic. Simulation is carried out by MATLAB/Simulink, demonstrating that the proposed controller has fast response with lower total harmonic distortion.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.12
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• pp.147-155
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• 2010

We studied on performance improvement of TTM(TI21 Test Meter) that is test and diagnosis devices for jointless audio frequency track circuit on Korean electric railway TI21 standard. Upgraded devices is AD-TTM(Advanced TI21 Test Meter). This can measure alternating frequency USB(Upper signal band) and LSB(Lower signal band). In the audio frequency track circuit, ${\pm}17[Hz]$ of nominal frequency are demodulated and supplied to track relay through AND gate. It is important that measurement function which is error between USB and LSB. Need of AD-TTM will stand out in the electric railway system because this is simple and accurate rather than the former device.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.41-48
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• 1992

The characteristics of traveling-wave electrodes for high-frequency electroptic integrated devices are described from the view point of improvement of phase-matching based on the conformal mapping method. Specific calculations of the characteristic impedance, effective microwave index, and eletrode loss for asymmetric coplanar strip(ACPS) and coplanar waveguide(CPW) electrode structures are presented as a function of the geometric electrode parameters including the electrode thickness and buffer layer thickness. 5-10(x10S0-6Tm) thick Au-ACPS electrodes were successfully fabricated by electroplating and ECR etcher. The improvement of modulation bandwidth can be theoretically observed from the combination of electrode and buffer layer thickness.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.667-670
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• 2003

Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.

• Journal of computational fluids engineering
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• v.15 no.4
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• pp.9-16
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• 2010

To alleviate NOx emission, a variety of approaches has been applied. In marine diesels, the application of SCR systems has been considered an effective exhaust aftertreatment method for NOx emission control. Most current SCR systems use a various catalyst for the reaction of ammonia with NOx to form nitrogen and water. In theory, it is possible to achieve 100% NOx if the $NH_3$-to-NOx ratio is 1:1. However, the reaction has a limited non-uniformity of the exhaust gas flow and ammonia concentration distribution. Therefore, it is necessary to investigate the optimum flow conditions. In order to achieve uniform flow at monolith front face, we are equipped with a various mixed devices. In this paper, it is presented that the mixed devices play an important role improvement of flow patterns and particle distributions of $NH_3$ by numerical simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.96-99
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• 2000

We fabricated electroluminescent(EL) devices which have a blended single emitting layer containing poly(N-vinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and its can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing applied voltage. In the consequence of the result, the external quantum efficiency of the devices that have a molar ratio 1:1 with LiF layer was 35 times larger than that of the device without LiF layer at 6V.