• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1085-1089
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• 2004

An impedance properties of the positive active material Li(Cr$_{0.4}$Mn$_{0.6}$)O$_2$ are measured by the changeable trend to the time. The charge-discharge capacities of 297 mAh(g)$^{-1}$ 175 mAh(g)$^{-1}$ are obtained by the made cell with the active material that the Cr was added to LiMnO$_2$ to prevent structural degradation of an electrode active material with impedance of 75 Ω to get at an initial hour. Resultantly, these variations which the impedances enhanced continually, were not watched the impeditive variations as the results of the delay time that the positive thin films and the references have been soaked all together in the solution of electrolyte of 1M LiPF$_{6}$ EC/DEC(l/2). Accordingly, it means an amount increased of the discharged capacities in the view of the results that the impeditive values were decreased are known already through a authorized paper.per.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.94-99
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• 2002

The electrical properties of porous $SiO_2/ITO$ nano thin film were studied by complex impedance and conductive mechanisms were analyzed. According to the results of complex impedance, the activation energy of $SiO_2/ITO$ and $Zn-SiO_2/ITO$ were 0.309 eV, 0.077 eV in below $450^{\circ}C$ and 0.147 eV in over $450^{\circ}C$, respectively. In case of $SiO_2/ ITO$, slightly direct tunneling occurred at room temperature. The contribution for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over $300^{\circ}C$ by Thermally assisted tunneling. In case of $Zn-SiO_2/ITO$, high conductivity in 1.26 ${\Omega}^{ -1}{cdot}cm^{-1}$ at room temperature appeared by space charge conduction or Frenkel-poole emission that Zn ions play a role as localized electron states.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.382-387
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• 1999

The processes and the kinetics of the lithium intercalation into the spin coated $V_2O_5$ xerogel prepared by the sol-gel processing have been studied employing impedance analyzer. Homogeneous and quasi-isotropic thin films of the xerogel can be obtained as a result of random distribution of the $V_2O_5$ gels on the substrate by the use of the spin coating. Effective diffusion coefficient and charge transfer resistance vary more than one order of magnitude at high and low lithium composition in $V_2O_5$ xerogel, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.555-561
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• 2001

In this paper, the low power (1.5 W) solenoid-type magnetic thin-film transformers utilizing a $Ni_{81}Fe_{19)$ core material were designed and fabricated for 5 MHz-drive DC-DC converter application. The $20\mum$ thick copper films were used as the coils. The transformers fabricated in this work have the sizes of $3.08 mm\times25.5 mm\; and\; 6.15 mm\times12.75 mm.$ The optimum design of solenoid-type magnetic thin film transformers was performed utilizing the conventional equations, a Maxwell computer simulator (Ansoft HFSS V7.0 for PC), and parameters obtained from the magnetic properties of NiFe magnetic core materials. frequency characteristics of inductance, dc resistance (R), coupling factor (k) and gain of developed transformers were measured using HP4194A impedance and gain-phase analyzer. The fabricated transformers with the size of $6.15 mm\time12.75 mm$ exhibit the inductance of $0.83 \muH$, the dc resistance of $2.3\Omega$$\Omega$, the k of 0.91 and the gain of -1 dB at 5 MHz, which show the comparable results to those reported in the recent literatures. The measured high-frequency characteristics for the fabricated transformers agreed well with those obtained by theoretical calculations .

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.253-254
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• 2008

The $TiO_2$ Pastes was prepared with the starting materials of $TiO_2$ (P-25), ethyl cellulose, a-terpineol and bis(2-ethylhexyl) phthalate, and this $TiO_2$ paste application for dye-sensitized solar cells (DSSCs) were investigated. In order to improved transparency of $TiO_2$ photoanode films, $TiO_2$ paste was changed ethyl cellulose and a-terpineol contents. The morphology of prepared $TiO_2$ films were investigated by field emission scanning electron microscopy (FE-SEM). The electrochemical properties of the thin films and the performance of DSSCs were measured by photovoltaic-current density and AC impedance. Energy conversion efficiency was obtained about 5.7% at ethyl cellulose and a-terpineol on best mixed ratio under illumination with AM 1.5 ($100mWcm^{-2}$)simulated sunlight.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.796-798
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• 2002

In these days, the interruption capability of some circuit breakers, which are installed in the transmission systems, is getting lower than the magnitude of the fault current because of continuous increase of power demand and relatively short power line which was installed in forms of mesh network As a result of these situations, fault current limiters (FCLs) are strongly necessary. There are various types which is investigated around the world, and new power apparatuses that have been newly considered and developed by many manufactures. In this paper, we considered resistive superconducting fault current limiters with YBCO thin films. The resistive limiters utilize a transition of YBCO films from superconducting to normal state caused by exceeding the critical current. By means of newly occurred impedance, the fault current will be limited effectively. Generally, a few current path patterns are available for YBCO films to enhance the current limiting performance of YBCO films. In this paper. the meander-type and the bi-spiral-type were used for current paths of YBCO flims. When YBCO films are quenched into the normal state, bubbles could be observed on the surface of YBCO films. Using our high-speed camera, the number of bubbles and the size of bubbles could be visualized and the relation between bubbles and current density was analyzed. By means of moving pictures of bubbles, we observed how the quench extended or how the heat was conducted in films.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.50-55
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• 2004

We fabricated and tested a resistive type superconducting fault current limiter (SFCL) of three-phase 6.6 $kV_{rms}/200 A_{rms}$ rating based on YBCO thin films grown on sapphire substrates with a diameter of 4 inches, Short circuit tests were carried out at a accredited test facility for single line-to- ground faults, phase-to-phase faults and three-phase faults, Each phase of the SFCL was composed of 8${\times}$6 elements connected in series and parallel respectively. Each element was designed to have the rated voltage of 600 $V_{rms}$. A NiCr shunt resistor of 23 Ω was connected to each element for simultaneous quenches. Firstly, single phase-to-ground fault tests were carried out. The SFCL successfully developed the impedance in the circuit within 0.12 msec after fault and controlled the fault current of 10 $kA_{rms} below 816 A_{peak}$ at the first half cycle. In addition, in case of phase-to-phase fault and three- phase fault test. simultaneous quenches among the SFCLs of the phases successfully accomplished. In conclusion. the SFCL showed excellent performance of current limitation upon fault and stable operation regardless of the amplitude of fault currents.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.193-193
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• 2011

To obtain ceramic films, the sol-gel coating technique has been broadly used with heat treatment, but crack formation tend to occur during heat treatment in thick sol-gel films. We prepared PZT thin films by sol-gel method with single-step spin coating process. The PZT solution have been synthesized using lead acetate ($Pb(CH_3COO)_2$), zirconium acetylacetonate ($Zr(OC_3H_7^n)_4$), and titanium diisopropoxide bis(acetylacetonate) 75wt% in isopropanol ($Ti(OC_3H_7^i)_2(OC_3H_7^n)_2$) as starting materials and n-propanol was selected as a solvent. The poly(vynilpyrrolidone) (PVP) was added with 0, 0.25, 0.5, 0.75, and 1 molar ratios to control viscosity of solution. We investigated influence of the viscosity on thickness, microstructure, and electrical properties of final PZT films. Thermo-gravimetric analysis and differential scanning calorimeter (TGA/DSC) was carried out from room temperature to $800^{\circ}C$ in order to measure pyrolysis temperature. Structural characteristics were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and dielectric properties were measured by RT66A (Radiant) and impedance analyzer (Agilent), respectively. The thicknesses of PZT films depended on incorporation of an excess amount of PVP. Finally, we obtained PZT films of good quality without crack formation via single-step spin coating.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.57-60
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• 2002

In this paper, transmission lines with low and high characteristic impedance (Z$_{0}$) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. For the low Z$_{0}$, two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z$_{0}$ values for each CPW type are 7.3 and 9.4$\Omega$, respectively, at a signal line width of 100 #m. Whit the ratio between the spacing of bottom-ground and the signal line with becomes greater than 2.5, the Z$_{0}$ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z$_{0}$ of 25.5$\Omega$, and this impedance is ~64 % of the values obtained from the BCB-based CPW structures of the same line width. Measurement result of CPW on BCB layer is 100.5 Ω.s 100.5 Ω.