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http://dx.doi.org/10.3740/MRSK.2002.12.1.094

Electrical Properties of Porous SiO2/ITO Nano Films  

Sin, Yong-Uk (Ceramic Processing Research Center, KIST)
Kim, Sang-U (Ceramic Processing Research Center, KIST)
Publication Information
Korean Journal of Materials Research / v.12, no.1, 2002 , pp. 94-99 More about this Journal
Abstract
The electrical properties of porous $SiO_2/ITO$ nano thin film were studied by complex impedance and conductive mechanisms were analyzed. According to the results of complex impedance, the activation energy of $SiO_2/ITO$ and $Zn-SiO_2/ITO$ were 0.309 eV, 0.077 eV in below $450^{\circ}C$ and 0.147 eV in over $450^{\circ}C$, respectively. In case of $SiO_2/ ITO$, slightly direct tunneling occurred at room temperature. The contribution for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over $300^{\circ}C$ by Thermally assisted tunneling. In case of $Zn-SiO_2/ITO$, high conductivity in 1.26 ${\Omega}^{ -1}{cdot}cm^{-1}$ at room temperature appeared by space charge conduction or Frenkel-poole emission that Zn ions play a role as localized electron states.
Keywords
${SiO_2}/ITO$ nato film; impedance; tunneling; Zn ion;
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