• 한국초전도학회:학술대회논문집
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• v.9
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• pp.124-128
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• 1999

We report microwave properties of high-T$_c$ superconducting (HTS) microstrip antennas without impedance matching circuits, where the impedance mismatching is obvious under the critical temperature (T$_c$). The superconducting thin films used in this report were YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on MgO substrates produced by pulse laser deposition (PLD) technique. At around T$_c$, 86 K the reflection coefficient rapidly drops, and the standing wave ratio (SWR) becomes almost unity, and the characteristic impedance based on the Smith chart is nearly 50 ${\Omega}$. The reflection coefficient and the SWR of the HTS microstrip antenna were - 62.52 dB and 1.0015, respectively, at the resonant frequency of 11.812 CHz at 86 K.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.62 no.2
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• pp.95-97
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• 2013

$CaTiO_3$ thin films using silk screen printing technology were fabricated and their humidity sensitive characteristics have been investigated. The specimens were sintered at $1000^{\circ}C$, $1050^{\circ}C$, $1100^{\circ}C$ for 1 hour and the best humidity sensitivity was shown in the specimens sintered at $1000^{\circ}C$. The humidity sensitivity decreased with increasing measuring frequencies and was stable at different abient temperatures. Hysteresis of impedance variation with increasing and decreasing relative humidity were negligible.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.9-17
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• 2005

We studied the characteristics of impedance and electromechanical coupling coefficient in ZnO and AIN thin films by using resonance frequency spectrum method. The response peak of impedance decreased with the decrease of thickness of piezoelectrics, the number of mode of response peak decreased with the decrease of substrate thickness. An error of Kt² estimated from input Kt² increased as the thickness of piezoelectrics decreased and the thickness of substrate increased. Also, the error was increased in case of a large acoustic impedance of substrate. It was found that the composite resonator operating in optimized condition could be designed through the resonance frequency spectrum analysis of composited resonator consisted of piezoelectric thin film and substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.2-188.2
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• 2015

The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.593-600
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• 2000

This paper investigated the conduction path and conduction mechanism in undoped polycrystalline diamond thin films deposited by microwave chemical vapor deposition. The resistances measured by ac impedance spectroscopy with different directions can not be explained by the previously-known surface conduction model. The electrodeposition of Cu and electroetching of Ag experiments showed that the conduction path is the grain boundaries within the diamond films. The electodeposition of Cu with an insulating surface layer further proved that the main conduction path in polycrystalline films in the grain boundaries. The film with high electrical conductivity has low activation energy of 45meV and higher dangling bond density. By considering the results and surface C chemical bonds, the H-C-C-H bonds at surface and in grain boundaries might be the origin of high conductivity in undoped diamond films.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.429-434
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• 2015

Resistance switching memory cells were fabricated using atomically dispersed Pt-$SiO_2$ thin film prepared via RF co-sputtering. The memory cell can switch between a low-resistance-state and a high-resistance-state reversibly and reproducibly through applying alternate voltage polarities. Percolated conducting paths are the origin of the low-resistance-state, while trapping electrons in the negative U-center in the Pt-$SiO_2$ interface cause the high-resistance-state. Intermediate resistance-states are obtained through controlling the compliance current, which can be applied to multi-level operation for high memory density. It is found that the resistance value is related to the capacitance of the memory cell: a 265-fold increase in resistance induces a 2.68-fold increase in capacitance. The exponential growth model of the conducting paths can explain the quantitative relationship of resistance-capacitance. The model states that the conducting path generated in the early stage requires a larger area than that generated in the last stage, which results in a larger decrease in the capacitance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.247-248
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• 2006

Carbon nitride films were evaluated that they had many advantages for miniature micro-humidity-sensors using the standard CMOS technology humidity sensing properties and CV characteristics of the carbon nitride films have been investigated for fabricating one chip HUSFET(Humidity Sensitive Field Effect Transistor) humidity sensors Carbon nitride films were deposited on silicon substrate with meshed electrodes by reactive RF magnetron sputtering system. The capacitor-type humidity sensor revealed good humidity-impedance characteristics with a wide range of relative humidity changes, decreasing $254k{\Omega}$ to $16k{\Omega}$ according to increase of relative humidity between 5% ~ 95% and the films were very stable on the Si wafer. These results reveal that $CN_x$ thin films can be used for Si based or HUSFET structure one chip micro-humidity sensors.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1233-1235
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• 1994

In this work, polyimide thin films fabricated by the electrophoretic deposition are investigated as a humidity sensing material. Capacitance and impedance are measured with increasing relative humidity to find the nature of the film. From the results, the polyimide humidity sensor is not classified impedance change type but capacitance change type and appear more sensitive in the region of higher humidity than that of lower humidity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1286-1291
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• 2003

Quench behavior of resistive superconducting fault current limiters (SFCLS) with various pattern shapes was investigated. The pattern shapes employed were meander, bi-spiral, and spital shapes of identical line width, gap and margin. SFCLS were fabricated from YBCO thin films grown on two-inch diameter Al$_2$O$_3$ substrates under the same conditions. The total length of current limiting paths was the shortest at the spital shape due to its larger useless space. Inductance component of SFCLs with the spiral shape was around two times as high as those of other two shapes. This is not desirable since impedance characteristics of existing power systems can be changed. Resistance rise of current limiting elements was low at a spiral shape before the whole quench completion, which may act as a disadvantage for simultaneous quench in serial connection between current limiting elements, but the temperature tended to have similar values at higher voltages. On the other hand, hi-spital shape was severe at insulation level between current limiting lines. When these aspects were considered, we concluded that a meander shape was appropriate to design for a resistive SFCL based on thin films except the concentration of electric field at edge areas of strip lines.