• 한국산학기술학회논문지
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• 제19권6호
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• pp.382-390
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• 2018

본 연구에서는 국제기준 및 산업환경 변화에 따른 의료기기 품질경영 평가모델, 즉 의료기기 제조기업의 품질경영시스템의 인허가와 상시점검에 필요한 평가기준의 구성요소를 도출하고, 이를 평가도구로 의료기기 제조기업에 적용하여 실행수준의 평가 및 경영성과에 미치는 영향을 검증하였다. 본 연구에서는 선행연구 검토, 전문가 면담조사에 따라 예비항목을 마련하고, 기획, 실시, 점검, 조치 등 4개 영역의 요인으로 대분류 항목을 정의한 후, 각각의 평가계층과 평가항목을 구성하였으며, AHP에 의한 가중치와 중요도를 산출하였다. 그 결과, 기획 요인에서는 책임의 명확화와 품질관리 목표설정의 항목, 실시 요인에서는 개별제품을 중심으로 한 요구사항의 관리 및 설계 개발 프로세스의 관리에 관한 평가항목, 점검 요인에서는 정보의 측정 분석에 대한 관리항목, 조치 요인에서는 인증기준 및 법규, 규제에 대한 검토항목이 상대적으로 중요하게 나타났다. 이에 도출된 평가모델을 평가도구로 삼아 의료기기 제조기업에 적용함으로써, 품질경영 실행수준의 평가와 경영성과에 미치는 영향을 조사 분석하였다. 연구대상 의료기기 제조기업들은 비교적 양호한 수준의 품질경영 실행수준을 보이고 있고, 이를 통해 일정수준의 경영성과를 얻고 있는 것으로 나타났다. 또한, 각 요인과 평가계층들이 대부분 경영성과에 유의한 영향을 미치는 것으로 분석되었다. 특히 의료기기 품질경영시스템은 인허가 취득이 주목적이지만, 인허가와 직접적인 관련이 없는 경영환경적 요소들이 중요하며, 기업 내 외부에서 이러한 요소들이 연계성을 갖고 통합적으로 운영되는 것이 효과적이라는 점을 알 수 있었다.

• 한국콘텐츠학회논문지
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• 제16권11호
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• pp.796-805
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• 2016

본 연구는 ICT융합 스포츠 콘텐츠 게임 기기제품 체험자를 대상으로 즐거움, 편리성, 유용성이 게임만족도 및 재사용의도에 미치는 영향력을 분석하는 것이 목적이다. 연구의 목적을 달성하기 위해 ICT융합 및 확장된 기술수용모형(TAM: Technology Acceptance Model)에 바탕을 두고 연구모형 및 가설을 설정하였다. 본 연구의 제안된 연구모형은 국립대구과학관을 방문하여 ICT융합 스포츠 게임기기를 체험한 271명을 대상으로 SmartPLS 2.0을 이용하여 구조방정식 모형으로 분석하였다. 분석결과, 첫째, 즐거움, 편리성, 유용성은 게임만족도에 정(+)의 영향을 미치는 것으로 나타났다. 둘째, 게임만족도는 재사용의도에 정(+)의 영향을 미치는 것으로 나타났다. 본 연구의 결과는 ICT융합 스포츠 게임기기 업체의 콘텐츠 개발에 도움을 줄 것으로 보인다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.232-235
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• 2015

최근, 모바일 장치는 컴퓨터와 비슷한 기능을 갖추고 있다. 그러나, 모바일 장치는 낮은 처리 능력, 제한된 메모리, 예측할 수 없는 연결 및 제한된 배터리 수명 등 과 같은 제약으로 인해 제한된 리소스를 가지고 있다. 모바일 장치의 능력을 향상시키기 위한 아이디어는 컴퓨팅 인프라 모바일 장치로부터 부하를 이동하는 클라우드 컴퓨팅 및 가상화 기술을 사용하는 것이다. 이러한 기술은 모바일 장치에서 resource-rich cloud 또는 서버로 많이 계산되는 리소스를 이동하는 기술로 구성된다. 이러한 기술에 대한 목표를 달성하기 위하여, 연구자들은 모바일 클라우드 애플리케이션 모델을 설계를 하고 있었다. 이 논문에서 우리는 cloudlet architecture에 대해 강조하고, 그 방법론과 cloudlet과 모바일 장치사이에서 영향 측정에 대해 설계에 대해 연구한다.

• Journal of Chest Surgery
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• 제55권3호
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• pp.197-205
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• 2022

Background: The integrated design of the HeartMate 3 (Abbott Laboratories, Chicago, IL, USA) affords flexibility to place the pump within the pericardium or thoracic cavity. We sought to determine whether the presence of a left ventricular assist device (LVAD) in either location has a meaningful impact on overall patient outcomes. Methods: A retrospective cohort study was conducted of all 165 patients who received a HeartMate 3 LVAD via a median sternotomy from November 2014 to August 2019 at our center. Based on operative reports and imaging, patients were divided into intrapleural (n=81) and intrapericardial (n=84) cohorts. The primary outcome of interest was in-hospital mortality, while secondary outcomes included postoperative complications, cumulative readmission incidence, and 3-year survival. Results: There were no significant between-group differences in baseline demographics, risk factors, or preoperative hemodynamics. The overall in-hospital mortality rate was 6%, with no significant difference between the cohorts (9% vs. 4%, p=0.20). There were no significant differences in the postoperative rates of right ventricular failure, kidney failure requiring hemodialysis, stroke, tracheostomy, or arrhythmias. Over 3 years, despite similar mortality rates, intrapleural patients had significantly more readmissions (n=180 vs. n=117, p<0.01) with the most common reason being infection (n=68/165), predominantly unrelated to the device. Intrapleural patients had significantly more infection-related readmissions, predominantly driven by non-ventricular assist device-related infections (p=0.02), with 41% of these due to respiratory infections compared with 28% of intrapericardial patients. Conclusion: Compared with intrapericardial placement, insertion of an intrapleural HM3 may be associated with a higher incidence of readmission, especially due to respiratory infection.

• 한국안전학회지
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• 제27권5호
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• pp.30-34
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• 2012

A safety helmet is a personal protective equipment to protect the head from falling and flying objects. A safety helmet has the maximum delivered impact force as shock absorption performance, the lower delivered impact force the better performance, which was not a controlled variety during manufacturing safety helmet. Accordingly there were some difficulties in establishing the standard for improved performance as there was not a clear controllable impact force for improved performance. In this study the shock absorption performance was intended to be found as coefficient of restitution related to impulse. As a research method, a coefficient of restitution during the absorption of shock was calculated using the impulse transferred to pharynx utilizing the safety helmet shock absorption performance testing device based on the theory of momentum and impulse. The estimated impulsive force curve was derived assuming that shock was not absorbed using the measured data. The sample was selected as tested goods of ABS material for safety certification available mainly in the market. As a result of study, the maximum delivered impact force of safety helmet made by a domestic safety certified a company was 735 N, and its coefficient of restitution proved to be 0.64. The smaller coefficient of restitution is, the lower maximum delivered impact force and the higher shock absorption performance. The coefficient of restitution can be used as a performance index of safety helmet.

• Journal of Biosystems Engineering
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• 제27권1호
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• pp.67-76
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• 2002

This study was conducted to investigate the effects of impact conditions on the acoustic characteristics of a watermelon. The study was crucial to develop a device for nondestructive internal quality evaluation of a watermelon by an acoustic impulse response method. An impact device was constructed with a pendulum to hit the watermelon, a microphone to detect the acoustic impulse responses, and a digital oscilloscope and computer to store and analyze the data. The selected samples were Guemcheon cultivar watermelons(Citrulus Vulgaris Schrad) harvested on Oct. 20,1998. Sixty watermelons were tested on flour different types of sample holders, with four kinds of ball made of different materials, at four bevels of the angular position of the pendulum and distance from the watermelon to the microphone. Since the magnitudes of frequencies obtained by hitting with the steel and rubber ball were relatively small at the bandwidths of above 500 Hz, it was shown that the steel and rubber ball were not suitable far a hitting ball in the pendulum to get informations on internal quality of the watermelon. In case of using broth of the wood and acryl ball, almost the same and good acoustic responses were shown on the wide range of frequency bandwidth. Therefore, it seemed that the acryl ball was more suitable to the test than the wood ball in considering its mechanical properties. The acoustic characteristics of the watermelon were not shown a significant difference between the types of sample holder. The amplitudes of the acoustic signals and the magnitudes of frequencies from the whole samples increased with increase of the angular position of pendulum and with decrease of the distance from the watermelon to the microphone. However, the resonance resonance of the sample were almost the same regardless of the angular positions and the distances.

• 대한전자공학회논문지SD
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• 제40권10호
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• pp.32-38
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• 2003

SIMOX 웨이퍼를 사용하여 제작된 GAA 구조 SOI MOSFET의 열전자에 의한 소자열화를 측정·분석하였다. nMOSFET의 열화는 스트레스 게이트 전압이 문턱전압과 같을 때 최대가 되었는데 이는 낮은 게이트 전압에서 PBT 작용의 활성화로 충격이온화가 많이 되었기 때문이다. 소자의 열화는 충격이혼화로 생성된 열전자와 홀에의한 계면상태 생성이 주된 원인임을 degradation rate와 dynamic transconductance 측정으로부터 확인하였다. 그리고 pMOSFET의 열화의 원인은 DAHC 현상에서 생성된 열전자 주입에 의한 전자 트랩핑이 주된 것임을 스트레스 게이트 전압변화에 따른 드레인 전류 변화로부터 확인 할 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.458-466
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• 2012

A Dual metal gate stack cylindrical/ surrounded gate MOSFET (DMGSA CGT/SGT MOSFET) has been proposed and an analytical model has been developed to examine the impact of this structure in suppressing short channel effects and in enhancing the device performance. It is demonstrated that incorporation of gate stack along with dual metal gate architecture results in improvement in short channel immunity. It is also examined that for DMGSA CGT/SGT the minimum surface potential in the channel reduces, resulting increase in electron velocity and thereby improving the carrier transport efficiency. Furthermore, the device has been analyzed at different bias point for both single material gate stack architecture (SMGSA) and dual material gate stack architecture (DMGSA) and found that DMGSA has superior characteristics as compared to SMGSA devices. The analytical results obtained from the proposed model agree well with the simulated results obtained from 3D ATLAS Device simulator.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.145-146
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• 2000

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권2호
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• pp.127-138
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• 2013

The impact of Empty Space layer in the channel region of a Double Gate (i.e. ESDG) MOSFET has been studied, by monitoring the DC, RF as well as the digital performance of the device using ATLAS 3D device simulator. The influence of temperature variation on different devices, i.e. Double Gate incorporating Empty Space (ESDG), Empty Space in Silicon (ESS), Double Gate (DG) and Bulk MOSFET has also been studied. The electrical performance of scaled ESDG MOSFET shows high immunity against Short Channel Effects (SCEs) and temperature variations. The present work also includes the linearity performance study in terms of $VIP_2$ and $VIP_3$. The proper bias point to get the higher linearity along with the higher transconductance and device gain has also been discussed.