• Title/Summary/Keyword: Image-crystal

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Microstructure Evaluation of Nano-thick Au-inserted Nickel Silicides (나노급 Au층 삽입 니켈실리사이드의 미세구조 변화)

  • Yoon, Ki-Jeong;Song, Oh-Sung
    • Korean Journal of Materials Research
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    • v.18 no.1
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    • pp.5-11
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    • 2008
  • Thermally evaporated 10 nm-Ni/1 nm-Au/(30 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Au-inserted nickel silicide. The silicide samples underwent rapid thermal annealing at $300{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance was measured using a four-point probe. A scanning electron microscope and a transmission electron microscope were used to determine the cross-sectional structure and surface image. High-resolution X-ray diffraction and a scanning probe microscope were employed for the phase and surface roughness. According to sheet resistance and XRD analyses, nickel silicide with Au had no effect on widening the NiSi stabilization temperature region. Au-inserted nickel silicide on a single crystal silicon substrate showed nano-dots due to the preferred growth and a self-arranged agglomerate nano phase due to agglomeration. It was possible to tune the characteristic size of the agglomerate phase with silicidation temperatures. The nano-thick Au-insertion was shown to lead to self-arranged microstructures of nickel silicide.

Development of Measurement System for Industrial Transportable Gamma Ray CT (이동 형 산업용 단층측정 장치를 위한 감마선 검출시스템 개발)

  • Kim, Jong-Bum;Jung, Sung-Hee;Moon, Jin-Ho
    • Journal of Radiation Industry
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    • v.6 no.3
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    • pp.231-237
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    • 2012
  • This paper introduces a gamma-ray measurement system for a transportable tomography which is applicable for an industrial process diagnosis. The gamma-ray measurement system consists of pulse mode operating 72 channel CsI detectors, main AMP-pulse shaper, single channel analyzer, counter and control PC. The CsI crystal is coupled with a PIN diode which is connected to an amplifier and pulse shaper. For a compact design, the amplifier and pulse shaping circuit are included in a single package. 36 sets of CsI detectors are connected to a multi-channel counter through single channel analyzers. A computer controls and collects data from two multi-channel counters. This configuration results in 72 channel counting system in total. The CT rotator and radiation measurement system are controlled by a PC with LabVIEW program. Tomographic data were measured for a phantom by the measurement system and transportable gamma-ray CT. From the experimental data image reconstructions were performed by ML-EM algorithm. The result showed that the CsI detector system can be a suitable component for transportable gamma-ray CT system.

Highly Doped Nano-crystal Embedded Polymorphous Silicon Thin Film Deposited by Using Neutral Beam Assisted CVD at Room Temperature

  • Jang, Jin-Nyeong;Lee, Dong-Hyeok;So, Hyeon-Uk;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.154-155
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    • 2012
  • The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (< $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

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A Feasibility Study of a SiPM Based Intraoperative Beta Imaging/Gamma Probe using the Depth of Interaction Measurement (실리콘 광증폭기와 반응깊이 측정방법을 이용한 수술용 베타 영상/감마 프로브 가능성 연구)

  • Kwak, In-Suk;Kang, Han Gyu;Son, Jeong-Whan;Lee, Jae Sung;Hong, Seong Jong
    • Journal of Biomedical Engineering Research
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    • v.37 no.1
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    • pp.7-14
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    • 2016
  • Radiopharmaceutical agents for positron emission tomography (PET), such as $^{18}F$-FDG and $^{68}Ga$, have been used not only for whole-body PET imaging but also for intraoperative radionuclide-guided surgery due to their quantitative and sensitive imaging characteristics. Current intraoperative probes detect gamma or beta particles, but not both of them. Gamma probes have low sensitivities since a collimator has to be used to reduce backgrounds. Positron probes have a high tumor-to-background ratio, but they have a 1-2 mm depth limitation from the body surface. Most of current intraoperative probes produce only audible sounds proportional to count rates without providing tumor images. This research aims to detect both positrons and annihilation photons from $^{18}F$ using plastic scintillators and a GAGG scintillation crystal attached to silicon photomultiplier (SiPM). The depth-of-interaction (DOI) along the plastic scintillator can be used to obtain the 2-D images of tumors near the body surface. The front and rear part of the intraoperative probe consists of $4{\times}1$ plastic scintillators ($2.9{\times}2.0{\times}12.0mm^3$) for positron detection and a Ce:GAGG scintillation crystal ($12.0{\times}12.0{\times}9.0mm^3$) for annihilation photon detection, respectively. The DOI resolution of $4.4{\pm}1.6mm$ along the plastic scintillator was obtained by using the 3M enhanced specular reflector (ESR) with rectangular holes between the plastic scintillators, which showed the feasibility of a 2-D image pixel size of $2.9{\times}4.4mm^2$ (X-direction ${\times}$ Y-direction).

Study on the Optical Characteristics of the Green Phosphor for PDP Application (PDP용 녹색 형광체의 광 특성 개선에 관한 연구)

  • Han, Bo Yong;Yoo, Jae Soo
    • Korean Chemical Engineering Research
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    • v.47 no.2
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    • pp.150-156
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    • 2009
  • Plasma Display Panels(PDPs) require to have improved luminous efficiency, low manufacturing cost, and high image quality to compete with other flat display devices such as Liquid Crystal Displays(LCDs) and organic light-emitting diodes(OLEDs). In addition, the diversity of product line-up may be needed for high market share. In this paper, the optical characteristics of typical green phosphor for PDP application are reviewed and the problem-based solution will be proposed. We also shortly describe the principle of 3D-PDPs which are promising. Then, the requirement of green phosphor for 3D-PDP application is summarized and research achievement, as of now, is described. The typical problems of $Zn_2SiO_4:Mn$ phosphor, which is the most well-known, are the negatively charged surface property and the long decay time, which leads to unstable discharge in green cell and afterimage. These problems were solved by coating the phosphor surface with metallic oxide. It was found that $Al_2O_3$ would be the best material for $Zn_2SiO_4:Mn$ phosphor. It gives longevity as well as low operating voltage due to the charging effect in green cells. Also, new phosphors, $(Y,\;Gd)Al_3(BO_3)_4:Tb$ and $(Mg,\;Zn)Al_2O_4:Mn$ phosphor are proposed for increasing the luminance and reducing the decay time, which are capable to apply for 3D-PDP application.

Development of Wide-Band Compensation Film to Improve Viewing Angle of Vertical Alignment Liquid Crystal Display (수직배향 액정디스플레이의 시야각 향상을 위한 광대역 보상필름 개발)

  • Choi, Yu-Jin;Lim, Young-Jin;Jeong, Kwang-Un;Lee, Seung-Hee
    • Polymer(Korea)
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    • v.35 no.4
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    • pp.337-341
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    • 2011
  • To expand the viewing angle of vertical alignment liquid crystal display (VA-LCD), a wide-band compensation film has been newly developed. VA-LCD needs a retardation film with improved oblique viewing property. The retardation film for VA-LCD has been fabricated by solvent casting and subsequent drawing triacetylcellulose (TAC) containing optical additives. Here, optical birefringence and wavelength dispersion of the retardation film strongly depend on the chemical structures of optical additives. Utilizing quantum mechanical computation, the polarizing anisotropy of retardation film was calculated with respect to additives. It is also realized that the wavelength dispersion of polarizing anisotropy depends on the type and location of substituent to the selected main isomer. When two propionates are substituted to the meta position of the selected main isomer, the wavelength dispersion of polarizing anisotropy shows the most gentle slop, which is well matched with the experimental results. The most gentle slop of wavelength dispersion means that the viewing angle characteristics of LCD are less influenced according to the wavelength of light source of LCD, and it's possible to make better image quality than the present level.

Geology and Geochemistry of Volcanic and Sedimentary Rocks from Deep Borehole in the Heunghae area, North Kyungsang Province (경북 흥해지역 심부시추공의 화산암 및 퇴적암류의 지질 및 지화학적 연구)

  • Lee, Chang-Bum;Kim, Tong-Kwon;Park, Deok-Won
    • The Journal of Engineering Geology
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    • v.19 no.4
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    • pp.459-474
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    • 2009
  • By the analysis of discontinuity at the outcrop and lineament on the satellite image, the joints have deeply relationship with the lineaments. The joint spaces at the drilling core are mostly 1~20 cm but at the rhyolite which is distributed near fault they have more closely. These volcanic rocks belong to the subalkaline series tuff, rhyolite, basalt in the study area from the diagram of $Nb/Y-Zr/TiO_2$. The composition diagram of Hf/3-Th-Nb/16 show destructive plate-margin basalt and their differentiates. The environment of formation of volcanics are normal continental arc. Most of LREE show high enriched pattern but HREE show depleted pattern. The K/Ar age of intermediate volcanics, tuff, rhyolite, crystal tuff are 55.3Ma, 77.25 Ma~91.22Ma, 63.16~64.39Ma, 54.49 Ma respectively.

A Simulation Study of Atomic Resolution TEM images for Two Dimensional Single Layer and Bilayer Graphene Crystal (2차원적인 단층 및 복층 그래핀 결정에 대한 원자분해 투과전자현미경 영상 시뮬레이션 연구)

  • Kim, Hwang-Su
    • Applied Microscopy
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    • v.40 no.1
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    • pp.21-28
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    • 2010
  • In a simulation study of atomic resolution transmission electron microscope images of single layer and bilayer graphene, it is demonstrated that the conventional Bloch wave formulations can be used when high-order Laue zone reflections are properly taken into account in the theory. The simulated images for bilayer graphene show 3-fold rotational lattice symmetry rather than the 6-fold one under certain conditions. This result can be understood as revealed the 3-fold rotational lattice symmetry of bilayer graphene in three dimensions along [0001]. For single layer graphene the observed phase images showing 3-fold rotational lattice symmetry were particularly noted. This phenomenon has been explained by an assumption of the re-configuration of electron density on the surface of graphene. And the matching images have been obtained as simulated with up to the second order Laue zone reflections only, reflecting the re-configuration of electrons on the surface.

On the Application of the Islamic Patterns to the Textile Design (이슬람 예술에 표현된 패턴 특징과 텍스타일디자인에의 활용)

  • 김희선
    • Journal of the Korea Fashion and Costume Design Association
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    • v.6 no.1
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    • pp.13-24
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    • 2004
  • This study was analyzed three basic patterns of the Islamic arts. These are natural flora, geometrical and calligraphy pattern. Islamic belief in Aniconism, doctrine of unity and worship of arabic language demanded delicate, decorative, and abstract patterns instead of patterns of real image. Natural flora pattern was classified into arabesque and various flower patterns. Muhammad commands that "The artist who fashions a representation of living things is competitor of God and therefore destined to eternal damnation, so if you want to represent living things, you should only depict flowers and trees". Then the natural flora patterns developed into main Islamic pattern. Geometric pattern was composed of geometrical elements like, circle, trigon, square, rectangle, pentagon, hexagon, octagon or other polygons, stars or motifs with straight or curved lines. Circle symbolized ′celestial′ sphere and crystal of the lower octagon symbolized ′earthly existence′. Therefore if the circle join with the octagons, it means fusion of celestial and earthly existence. Another important influence on the Islamic art was the calligraphy pattern, the writing of Arabic language. The major language of calligraphy pattern was Arabic script and often Persian script. Calligraphy pattern was composed of Kufic and Cursive script. The cursive script was developed various forms. The Islamic tenet prohibit depiction of sacred images, the sacred Arabic calligraphy such as ′Alla′ or ′Mohammad′ was substituted of them. And the content of calligraphy pattern was used with Quranic phrases. The aesthetics of Islamic patterns analyzed aesthetic of ′rhythmic lines′, aesthetic of ′unity in multiplicity′, aesthetic of tessellation and aesthetic of harmony. On the textiles of the Islamic culture, the arabesque, floral, geometric and calligraphy patterns were frequently used.

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NTGST-Based Parallel Computer Vision Inspection for High Resolution BLU (NTGST 병렬화를 이용한 고해상도 BLU 검사의 고속화)

  • 김복만;서경석;최흥문
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.41 no.6
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    • pp.19-24
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    • 2004
  • A novel fast parallel NTGST is proposed for high resolution computer vision inspection of the BLUs in a LCD production line. The conventional computation- intensive NTGST algorithm is modified and its C codes are optimized into fast NTGST to be adapted to the SIMD parallel architecture. And then, the input inspection image is partitioned and allocated to each of the P processors in multi-threaded implementation, and the NTGST is executed on SIMD architecture of N data items simultaneously in each thread. Thus, the proposed inspection system can achieve the speedup of O(NP). Experiments using Dual-Pentium III processor with its MMX and extended MMX SIMD technology show that the proposed parallel NTGST is about Sp=8 times faster than the conventional NTGST, which shows the scalability of the proposed system implementation for the fast, high resolution computer vision inspection of the various sized BLUs in LCD production lines.