• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.314-316
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• 2006

In this paper, the plastic organic thin-film transistors (OTFTs) with $32{\ast}32$ array are presented. Flexible organic light emitting diodes (OLEDs) operated by OTFTs are fabricated with a novel lamination method and the results are also presented. OTFT pixels defined by photolithography, and pentacene deposited by thermal evaporation. Fabrication method and the performances of green PHOLEDs with high efficiency, stability, and electrical performance are discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1202-1205
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• 2006

Dynamic Driving Carbon Nanotube Backlight Units (CNT-BLUs) can well utilize the persistence of their phosphor. This paper studies several dynamic driving schemes for the CNT-BLU developed by DTC/ITRI. Their illuminating efficiencies are experimentally evaluated. From these evaluations, this paper develops a new driving approach and even better efficiencies are obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.175-178
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• 2008

A new laser-addressing method is proposed in this paper. With the characteristic of high power and small spot size, simple structure electronic paper can be addressed only by laser source, and high quality image with 300dpi resolution can be easily achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1568-1570
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• 2008

In this paper, fabrication of a $60{\times}48$ polymer TFT array with a top-gate structure on plastic substrates using a low temperature printing process will be presented and the device structure and manufacturing processes will be discussed. The polymer TFT array showed excellent air stability and uniform electrical characteristics over a large area. Finally, a 1.5 inch EPD display with 50 dpi resolution using the polymer TFT array will be demonstrated for e-film device applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.434-437
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• 2009

To realize the advantages of e-Paper, driving systems should be separated from panels to keep its superiority in thin, light, and flexible. For this purpose, this paper develops a panel hot-plugging driving system for R2R cholesteric LCD. Its performance is verified by implementing an e-Badge application. Satisfactory results are obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.421-427
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• 2009

We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.

• Journal of Information Processing Systems
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• v.6 no.1
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• pp.1-20
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• 2010

Due to the convergence of voice, data, and video, today's telecom operators are facing the complexity of service and network management to offer differentiated value-added services that meet customer expectations. Without the operations support of well-developed Business Support System/Operations Support System (BSS/OSS), it is difficult to timely and effectively provide competitive services upon customer request. In this paper, a suite of NGOSS-based Telecom OSS (TOSS) is developed for the support of fulfillment and assurance operations of telecom services and IT services. Four OSS groups, TOSS-P (intelligent service provisioning), TOSS-N (integrated large-scale network management), TOSS-T (trouble handling and resolution), and TOSS-Q (end-to-end service quality management), are organized and integrated following the standard telecom operation processes (i.e., eTOM). We use IPTV and IP-VPN operation scenarios to show how these OSS groups co-work to support daily business operations with the benefits of cost reduction and revenue acceleration.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.218-221
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• 2008

Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.439-442
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• 2006

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of $160^{\circ}C$ with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of $10\;{\mu}m$ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.622-625
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• 2003

The dependence of stress-induced leakage current on LTPS TFTs was characterized in this study. The impacts of poly-Si crystallization, gate insulator, impurity activation, hydrogenation process and electrostatic discharge damage were investigated. It was observed more TFTs instable characteristic under those process-assisted processes. According to the LTPS roadmap, smaller geometric and low temperature process were the future trend and the stress-induced leakage current should be worthy of remark.