• Title/Summary/Keyword: ITO-free

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Relationships between Antithrombogenicity and Surface Free Energy of Regenerated Silk Fibroin Films

  • Park, Won Ho;Ha, Wan Shik;Ito, Hiraku;Miyamoto, Takeaki;Inagaki, Hiroshi;Noishiki, Yasuharu
    • Fibers and Polymers
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    • v.2 no.2
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    • pp.58-63
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    • 2001
  • Silk fibroin (SF) was dissolved in calcium chloride/ethanol/water mixture(1/2/8 in mole ratio) at $70^{\circ}C$ for 4h. The dissolved silk fibroin was regenerated by casting the dialyzed solution into films. The films were treated with 50% aqueous solution of methanol for different times, and their antithrombogenicity was evaluated by in vivo tests. In vivo blood tests were made by a method of peripheral vein indwelling suture. It was found that the silk fibroin had a good antithrombogenicity and an absorbability even though the polymer showed foreign body reaction. Finally, the blood compatibilty of silk fibroin films which were subjected to structural change by the methoanl treatment, was examined in connection with their interfacial surface energy, and a correlation between these properties was found to be present.

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DIRECT PRODUCTED W*-PROBABILITY SPACES AND CORRESPONDING AMALGAMATED FREE STOCHASTIC INTEGRATION

  • Cho, Il-Woo
    • Bulletin of the Korean Mathematical Society
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    • v.44 no.1
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    • pp.131-150
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    • 2007
  • In this paper, we will define direct producted $W^*-porobability$ spaces over their diagonal subalgebras and observe the amalgamated free-ness on them. Also, we will consider the amalgamated free stochastic calculus on such free probabilistic structure. Let ($A_{j},\;{\varphi}_{j}$) be a tracial $W^*-porobability$ spaces, for j = 1,..., N. Then we can define the corresponding direct producted $W^*-porobability$ space (A, E) over its N-th diagonal subalgebra $D_{N}\;{\equiv}\;\mathbb{C}^{{\bigoplus}N}$, where $A={\bigoplus}^{N}_{j=1}\;A_{j}\;and\;E={\bigoplus}^{N}_{j=1}\;{\varphi}_{j}$. In Chapter 1, we show that $D_{N}-valued$ cumulants are direct sum of scalar-valued cumulants. This says that, roughly speaking, the $D_{N}-freeness$ is characterized by the direct sum of scalar-valued freeness. As application, the $D_{N}-semicircularityrity$ and the $D_{N}-valued$ infinitely divisibility are characterized by the direct sum of semicircularity and the direct sum of infinitely divisibility, respectively. In Chapter 2, we will define the $D_{N}-valued$ stochastic integral of $D_{N}-valued$ simple adapted biprocesses with respect to a fixed $D_{N}-valued$ infinitely divisible element which is a $D_{N}-free$ stochastic process. We can see that the free stochastic Ito's formula is naturally extended to the $D_{N}-valued$ case.

Physical Property and Morphology Observation of HepG2 Cells by Various Concentration of Paraquat (파라쿼트 농도에 따른 HepG2 세포의 물리적 특성 변화와 실시간 모폴로지 관찰)

  • Lee, Dong-Yun;Kang, Hyen-Wook;Muramatsu, Hiroshi;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1232_1233
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    • 2009
  • Paraquat is well-known to cause hepatotoxic responses in human and other mammal species. In solution, it forms free radicals and charge-transfer complex of which formation plays an important role in determination of its biological activity in the presence of various anions. The HepG2 cells were cultured onto a quartz crystal sensor which is possible to detect the density and a viscosity changes using the resonance frequency (F) and the resonance resistance (R). The plot of F-R diagram is able to explain the rheological change of cells onto the surface of the quartz crystal sensor. In this paper, we investigated the physical properties of the HepG2 cells cultured onto a ITO electrode of the quartz crystal sensor according to the paraquat injection at various concentrations (100 mM, 10 mM, 1 mM). We also observed the morphological changes with a micro CCD camera, simultaneously. The HepG2 cells were cultured onto the ITO electrode surface of the quartz crystal modified a collagen film in $CO_2$ incubator. After the paraquat injection, we observed the changes of the morphologies by the micro CCD camera depending on time and analyzed the physical changes of cells on the electrode surface of quartz crystal using F-R diagram. From all results, we proved the effect of paraquat at various concentrations which is led to an apoptosis such as weakening and death of the cells by oxidation and reduction reaction that were produced the superoxide anions and other free radicals.

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The characteristics of AlNd thin film for TFT-LCD bus line (TFT-LCD bus line용 AlNd 박막 특성에 관한 연구)

  • Dong-Sik Kim;Sung Kwan Kwak;Kwan Soo Chung
    • Journal of the Korean Vacuum Society
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    • v.9 no.3
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    • pp.237-241
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    • 2000
  • The structural, electrical and etching characteristics of Al alloy thin film with low impurity concentrations AlNd deposited by using do magnetron sputtering deposition are investigated for the applications as gate bus line in the TFt-LCD panel. And ITO thin film was deposited on AlNd, then the contact resistance was measured by Kelvin resistor. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min. Moreover, the resistivity of AlNd does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlNd is found to be hillock free. The etching profiles of AlNd was good and the minimun contact resistance was about $110\;{\mu\Omega}cm$. Calculation results reveal that the AlNd (2wt.%) thin film can be applicable to 25" SXGA class TFT-LCD panels.

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Properties of the ZnS Thin Film Buffer Layer by Chemical Bath Deposition Process with Different Solution Concentrations and Deposition Time (화학습식공정법을 이용한 용액 농도 및 시간에 따른 ZnS 완충층 특성에 대한 분석)

  • Son, Kyeongtae;Kim, Jongwan;Kim, Minyoung;Shin, Junchul;Jo, Sunghee;Lim, Donggun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.5
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    • pp.269-275
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    • 2014
  • In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin films from $NH_3/SC(NH_2)_2/ZnSO_4$ solutions at $90^{\circ}C$. ZnS thin films have been prepared onto ITO glass. The concentrations of $ZnSO_4$ and $NH_3$ were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and optical properties of different ZnS thin films were influenced severely by the concentration of the two reacting chemicals. The optimal concentration of $ZnSO_4$ and $NH_3$ was 0.085 M and 1.6 M, respectively.

Fabrication of Ordered or Disordered Macroporous Structures with Various Ceramic Materials from Metal Oxide Nanoparticles or Precursors

  • Cho, Young-Sang;Moon, Jun-Hyuk;Kim, Young-Kuk;Choi, Chul-Jin
    • Journal of Powder Materials
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    • v.18 no.4
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    • pp.347-358
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    • 2011
  • Two different schemes were adopted to fabricate ordered macroporous structures with face centered cubic lattice of air spheres. Monodisperse polymeric latex suspension, which was synthesized by emulsifier-free emulsion polymerization, was mixed with metal oxide ceramic nanoparticles, followed by evaporation-induced self-assembly of the mixed hetero-colloidal particles. After calcination, inverse opal was generated during burning out the organic nanospheres. Inverse opals made of silica or iron oxide were fabricated according to this procedure. Other approach, which utilizes ceramic precursors instead of nanoparticles was adopted successfully to prepare ordered macroporous structure of titania with skeleton structures as well as lithium niobate inverted structures. Similarly, two different schemes were utilized to obtain disordered macroporous structures with random arrays of macropores. Disordered macroporous structure made of indium tin oxide (ITO) was obtained by fabricating colloidal glass of polystyrene microspheres with low monodispersity and subsequent infiltration of the ITO nanoparticles followed by heat treatment at high temperature for burning out the organic microspheres. Similar random structure of titania was also fabricated by mixing polystyrene building block particles with titania nanoparticles having large particle size followed by the calcinations of the samples.

Ferroelectric Properties of $(Pb_{0.9}Ca_{0.1})TiO_3$ Thin Films by Sol-Gel Processing (졸-겔법에 의한 $(Pb_{0.9}Ca_{0.1})TiO_3$ 박막의 강유전 특성)

  • Kim, Haeng-Koo;Chung, Su-Tae;Lee, Jong-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.2
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    • pp.138-145
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    • 1998
  • The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

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Power 및 temperature에 의한 증착률 변화와 Al-doped ZnO의 특성변화에 관한 연구

  • An, Si-Hyeon;Park, Cheol-Min;Jo, Jae-Hyeon;Jang, Gyeong-Su;Baek, Gyeong-Hyeon;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.107-107
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    • 2011
  • 오늘 날 transparent conductive oxide는 다양한 분야에서 활용되고 있다. 최근에는 태양전지 분야에서도 많이 활용되고 있으며, 초기에는 transmittance 및 낮은 sheet resistance 특성을 가지는 ITO가 많이 활용되었지만 thin film solar cell와 같이 hydrogenation 공정에 약한 ITO보다는 Al-doped ZnO가 사용되기 시작하면서 많은 연구가 진행되고 있다. 본 연구에서는 thin film solar cell 및 silicon heterojunction solar cell에 적용 가능한 Al-doped ZnO에 관한 연구로써 a-Si:H의 Si-H bonds에 영향을 주지 않는 낮은 영역의 substrate temperature와 power로 Al-doped ZnO를 형성하고 상기 parameter에 따른 Al-doped ZnO의 특성 변화에 대해서 분석하였다. 특히 substrate temperature가 변화할수록 carrier concentration 및 sheet resistance가 많은 변화를 보였으며 이로 인하여 transmittance 특성이 온도에 따라 좋아지다가 너무 높은 온도에서는 오히려 좋지 않게 되었다. 이는 너무 높은 carrier concentration은 free carrier absorption에 의해 transmittance 특성을 오히려 좋지 않게 한다. 우리는 본 연구를 통해 92.677% (450 nm), 90.309% (545 nm), 94.333% (800 nm)의 transmittance를 얻을 수 있었다.

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A study of recovery and recycling from Tin wasted resources (주석 함유 폐 자원으로부터 주석 회수 및 재활용 방안 연구)

  • Jeong, Hang-Cheol;Jin, Yeon-Ho;Kim, Geon-Hong;Jang, Dae-Hwan;Gong, Man-Sik
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.11a
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    • pp.217-218
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    • 2015
  • 주석은 최근 첨단 전기, 전자 제품의 핵심 소재로써 지속적인 수요 증가가 예상되는 전략 금속이다. 국내의 수요량은 2011년 기준 약 17,000톤 으로 99% 이상 수입에 의존하고 있는 실정이다. 그러나, 국내의 주석 제련 산업은 전무한 상태이며 폐자원에서 재활용하는 회수 기술도 초보 단계이다. 이러한 폐자원 발생량은 12,000톤/year이며, 약 1200억원에 달하는 규모이다. 다양한 폐자원의 선별적 전처리 요소 기술 개발 및 회수 공정 시스템 개발이 절실히 요구된다. 본 연구에서는, 주석 폐자원 중 solder 용융물 및 공정 스크랩 Lead solder, Lead-free solder 등 뿐만 아니라, ITO target 제조 시 발생하는 ITO sludge 등의 고상 폐자원으로부터 페자원의 물성을 파악하여 금속/산화물과의 파/분쇄 및 분급공정을 통하여 고품위의 주석 금속을 회수하였다. 뿐만 아니라, 고순도 주석시 발생하는 양극 슬라임 침출액 등의 액상 폐자원으로부터 희소금속의 추출 및 회수를 위해 습식 전처리 공정을 수행하였다. 침출액은 주석, 구리, 납 등의 유가금속이 이온형태로 존재하고 있으며, Chlorine이 다량 함유되어 있다. 고품위의 주석 산화물을 회수하기 위하여 침출액 내의 구리 제거 공정, Chlorine 제거 공정 등을 순차적으로 수행하여 고품위의 산화물 회수를 수행하였다.

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Box Cathode Sputtering Technologies for Organic Optoelectronics (유기물 광전소자 제작을 위한 박스 캐소드 스퍼터 기술)

  • Kim, Han-Ki;Lee, Kyu-Sung;Kim, Kwang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.53-54
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    • 2005
  • We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

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