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http://dx.doi.org/10.4313/JKEM.2014.27.5.269

Properties of the ZnS Thin Film Buffer Layer by Chemical Bath Deposition Process with Different Solution Concentrations and Deposition Time  

Son, Kyeongtae (Department of Electronic Engineering, Korea National University of Transportation)
Kim, Jongwan (McScience Inc.)
Kim, Minyoung (Department of Electronic Engineering, Korea National University of Transportation)
Shin, Junchul (Department of IT Convergence, Korea National University of Transportation)
Jo, Sunghee (Department of IT Convergence, Korea National University of Transportation)
Lim, Donggun (Department of Electronic Engineering, Korea National University of Transportation)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.5, 2014 , pp. 269-275 More about this Journal
Abstract
In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin films from $NH_3/SC(NH_2)_2/ZnSO_4$ solutions at $90^{\circ}C$. ZnS thin films have been prepared onto ITO glass. The concentrations of $ZnSO_4$ and $NH_3$ were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and optical properties of different ZnS thin films were influenced severely by the concentration of the two reacting chemicals. The optimal concentration of $ZnSO_4$ and $NH_3$ was 0.085 M and 1.6 M, respectively.
Keywords
Cd-free buffer layers; Zinc sulfide; ITO; Chemical bath deposition;
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